MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF720T1/D
NPN |
Silicon |
Transistor |
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COLLECTOR 2,4 |
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BASE |
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1 |
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EMITTER 3 |
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MAXIMUM RATINGS |
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Rating |
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Symbol |
Value |
Unit |
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Collector-Emitter Voltage |
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VCEO |
300 |
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Vdc |
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Collector-Base Voltage |
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VCBO |
300 |
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Vdc |
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Collector-Emitter Voltage |
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VCER |
300 |
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Vdc |
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Emitter-Base Voltage |
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VEBO |
5.0 |
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Vdc |
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Collector Current |
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IC |
100 |
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mAdc |
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Total Power Dissipation up to TA = 25°C |
PD |
1.5 |
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Watts |
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Storage Temperature Range |
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Tstg |
± 65 to +150 |
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°C |
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Junction Temperature |
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TJ |
150 |
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°C |
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DEVICE MARKING |
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DC |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
Max |
Unit |
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Thermal Resistance |
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RθJA |
83.3 |
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°C/W |
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from Junction-to-Ambient(1) |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
BF720T1
Motorola Preferred Device
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1 SOT±223 (TO-261AA)
Characteristics |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Breakdown Voltage |
V(BR)CEO |
300 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
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Collector-Base Breakdown Voltage |
V(BR)CBO |
300 |
Ð |
Vdc |
(IC = 100 μAdc, IE = 0) |
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Collector-Emitter Breakdown Voltage |
V(BR)CER |
300 |
Ð |
Vdc |
(IC = 100 μAdc, RBE = 2.7 kΩ) |
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Emitter-Base Breakdown Voltage |
V(BR)EBO |
5.0 |
Ð |
Vdc |
(IE = 10 μAdc, IC = 0) |
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Collector-Base Cutoff Current |
ICBO |
Ð |
10 |
nAdc |
(VCB = 200 Vdc, IE = 0) |
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Collector±Emitter Cutoff Current |
ICER |
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(VCE = 250 Vdc, RBE = 2.7 kΩ) |
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Ð |
50 |
nAdc |
(VCE = 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C) |
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Ð |
10 |
μAdc |
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
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Small±Signal Transistors, FETs and Diodes Device Data |
1 |
Motorola, Inc. 1998 |
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BF720T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
50 |
Ð |
Ð |
(IC = 25 mAdc, VCE = 20 Vdc) |
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Collector-Emitter Saturation Voltage |
VCE(sat) |
Ð |
0.6 |
Vdc |
(IC = 30 mAdc, IB = 5.0 mAdc) |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product |
fT |
60 |
Ð |
MHz |
(IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz) |
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Feedback Capacitance |
Cre |
Ð |
1.6 |
pF |
(VCE = 30 Vdc, IC = 0, f = 1.0 MHz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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