ON Semiconductor MJE15032, MJE15032G, MJE15033, MJE15033G Service Manual

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ON Semiconductor MJE15032, MJE15032G, MJE15033, MJE15033G Service Manual

MJE15032 (NPN),

MJE15033 (PNP)

Preferred Devices

Complementary Silicon

Plastic Power Transistors

Designed for use as high−frequency drivers in audio amplifiers.

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Features

DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc

=10 (Min) @ IC = 2.0 Adc

Collector−Emitter Sustaining Voltage −

VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033

High Current Gain − Bandwidth Product

fT = 30 MHz (Min) @ IC = 500 mAdc

TO−220AB Compact Package

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings: Machine Model C

Human Body Model 3B

Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector−Emitter Voltage

VCEO

250

Vdc

Collector−Base Voltage

VCB

250

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

IC

8.0

Adc

− Peak

 

16

 

 

 

 

 

Base Current

IB

2.0

Adc

Total Power Dissipation @ TC = 25_C

PD

50

W

Derate above 25_C

 

0.40

W/_C

Total Power Dissipation @ TA = 25_C

PD

2.0

W

Derate above 25_C

 

0.016

W/_C

Operating and Storage Junction

TJ, Tstg

– 65 to

_C

Temperature Range

 

+150

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance,

RqJC

2.5

_C/W

Junction−to−Case

 

 

 

 

 

 

 

Thermal Resistance,

RqJA

62.5

_C/W

Junction−to−Ambient

 

 

 

 

 

 

 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

8.0 AMPERES

POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

MARKING

DIAGRAM

4

 

A YW

TO−220

MJE1503xG

AKA

CASE 221A

 

STYLE 1

 

1

2 3

MJE1503x = Specific Device Code

x

= 2 or 3

A

= Assembly Location

Y

= Year

W

= Work Week

G

= Pb−Package

ORDERING INFORMATION

Device

Package

Shipping

MJE15032

TO−220

50 Units/Rail

 

 

 

MJE15032G

TO−220

50 Units/Rail

 

(Pb−Free)

 

 

 

 

MJE15033

TO−220

50 Units/Rail

 

 

 

MJE15033G

TO−220

50 Units/Rail

 

(Pb−Free)

 

 

 

 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2005

1

Publication Order Number:

June, 2005 − Rev. 3

 

MJE15032/D

MJE15032 (NPN), MJE15033 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage (Note 1)

VCEO(sus)

250

Vdc

 

(IC = 10 mAdc, IB = 0)

 

 

 

 

 

Collector Cutoff Current

ICBO

10

mAdc

 

(VCB = 250 Vdc, IE = 0)

 

 

 

 

 

Emitter Cutoff Current

IEBO

10

mAdc

 

(VBE = 5.0 Vdc, IC = 0)

 

 

 

 

 

ON CHARACTERISTICS (Note 1)

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

 

 

 

(IC = 0.5 Adc, VCE = 5.0 Vdc)

 

70

 

 

(IC = 1.0 Adc, VCE = 5.0 Vdc)

 

50

 

 

(IC = 2.0 Adc, VCE = 5.0 Vdc)

 

10

 

 

Collector−Emitter Saturation Voltage

VCE(sat)

0.5

Vdc

 

(IC = 1.0 Adc, IB = 0.1 Adc)

 

 

 

 

 

Base−Emitter On Voltage

VBE(on)

1.0

Vdc

 

(IC = 1.0 Adc, VCE = 5.0 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current Gain − Bandwidth Product (Note 2)

fT

30

MHz

 

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

 

 

 

 

 

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

 

 

 

 

 

2. fT = hfeftest.

 

 

 

 

 

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