ON Semiconductor 2N5462RLRP, 2N5462, 2N5461RLRA, 2N5461, 2N5460 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5460/D

JFET Amplifiers

P±Channel Ð Depletion

						2 DRAIN
		3
		GATE
					1 SOURCE
MAXIMUM RATINGS
Rating	Symbol	Value		Unit
Drain± Gate Voltage	VDG	40		Vdc
Reverse Gate ± Source Voltage	VGSR	40		Vdc
Forward Gate Current	IG(f)	10		mAdc
Total Device Dissipation @ TA = 25°C	PD	350		mW
Derate above 25°C		2.8		mW/°C
Junction Temperature Range	TJ	± 65 to +135			°C
Storage Channel Temperature Range	Tstg	± 65 to +150			°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5460 thru 2N5462

1

2 3

CASE 29±04, STYLE 7 TO±92 (TO±226AA)

	Characteristic		Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Gate± Source Breakdown Voltage			V(BR)GSS	40	Ð	Ð	Vdc
(IG = 10 μAdc, VDS = 0)		2N5460, 2N5461, 2N5462
Gate Reverse Current			IGSS
(VGS = 20 Vdc, VDS = 0)		2N5460, 2N5461, 2N5462		Ð	Ð	5.0	nAdc
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)		2N5460, 2N5461, 2N5462		Ð	Ð	1.0	μAdc
(VGS = 30 Vdc, VDS = 0, TA = 100°C)
Gate± Source Cutoff Voltage		2N5460	VGS(off)	0.75	Ð	6.0	Vdc
(VDS = 15	Vdc, ID = 1.0 μAdc)	2N5461		1.0	Ð	7.5
		2N5462		1.8	Ð	9.0
Gate± Source Voltage			VGS				Vdc
(VDS = 15	Vdc, ID = 0.1 mAdc)	2N5460		0.5	Ð	4.0
(VDS = 15	Vdc, ID = 0.2 mAdc)	2N5461		0.8	Ð	4.5
(VDS = 15	Vdc, ID = 0.4 mAdc)	2N5462		1.5	Ð	6.0
ON CHARACTERISTICS
Zero± Gate±Voltage Drain Current		2N5460	IDSS	± 1.0	Ð	± 5.0	mAdc
(VDS = 15	Vdc, VGS = 0, f = 1.0 kHz)	2N5461		± 2.0	Ð	± 9.0
		2N5462		± 4.0	Ð	± 16
SMALL± SIGNAL CHARACTERISTICS
Forward Transfer Admittance		2N5460	yfs	1000	Ð	4000	mmhos
(VDS = 15	Vdc, VGS = 0, f = 1.0 kHz)	2N5461		1500	Ð	5000
		2N5462		2000	Ð	6000
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)			yos	Ð	Ð	75	mmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)			Ciss	Ð	5.0	7.0	pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)			Crss	Ð	1.0	2.0	pF
FUNCTIONAL CHARACTERISTICS
Noise Figure			NF	Ð	1.0	2.5	dB
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
Equivalent Short±Circuit Input Noise Voltage			en	Ð	60	115
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)							nV Hz

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

2N5460 thru 2N5462

DRAIN CURRENT versus GATE

SOURCE VOLTAGE

	4.0								VDS = 15 V
	3.5
(mA)	3.0
CURRENT	2.5
	2.0				TA = ± 55°C
, DRAIN	1.5					25°C
						125°C
D	1.0
I
	0.5
	0
	0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0
			VGS, GATE±SOURCE VOLTAGE (VOLTS)
			Figure 1. VGS(off) = 2.0 Volts
	10
	9.0								VDS = 15 V
(mA)	8.0
	7.0			TA = ± 55°C
CURRENT	6.0				25°C
	5.0					125°C
, DRAIN	4.0
	3.0
D
I	2.0
	1.0
	0	0.5	1.0		1.5	2.0	2.5		3.0	3.5	4.0
	0
			VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 2. VGS(off) = 4.0 Volts

16

VDS = 15 V

14

(mA)	12
CURRENT	10			TA = ± 55°C
DRAIN,	8.0			25°C
	6.0				125°C
D	4.0
I
	2.0
	0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0
	0

VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 3. VGS(off) = 5.0 Volts

		FORWARD TRANSFER ADMITTANCE
mhos)			versus DRAIN CURRENT
	4000
(	3000
m
ADMITTANCE	2000
TRANSFER	1000
	700
FORWARD	500
	300					VDS = 15 V
						f = 1.0 kHz
fs	200
Y		0.3	0.5	0.7	1.0	2.0	3.0	4.0
	0.2
			ID, DRAIN CURRENT (mA)
			Figure 4. VGS(off) = 2.0 Volts
mhos)	10000
m	7000
(
ADMITTANCE	5000
TRANSFER	3000
	2000
FORWARD
	1000
	700					VDS = 15 V
							f = 1.0 kHz
fs	500
Y	0.5	0.7	1.0	2.0	3.0	5.0	7.0
			ID, DRAIN CURRENT (mA)
			Figure 5. VGS(off) = 4.0 Volts
mhos)	10000
m	7000
(
ADMITTANCE	3000
	5000
TRANSFER	2000
FORWARD	1000
	700					VDS = 15 V
						f = 1.0 kHz
fs
	500
Y		0.7	1.0	2.0	3.0	5.0	7.0	10
	0.5
			ID, DRAIN CURRENT (mA)

Figure 6. VGS(off) = 5.0 Volts

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data