ON Semiconductor 2N3906ZL1, 2N3906RLRP, 2N3906RLRM, 2N3906RLRE, 2N3906RLRA Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3905/D

General Purpose Transistors

PNP Silicon

				COLLECTOR
				3
		2
		BASE
				1
					EMITTER
MAXIMUM RATINGS
Rating	Symbol	Value			Unit
Collector± Emitter Voltage	VCEO	40			Vdc
Collector± Base Voltage	VCBO	40			Vdc
Emitter± Base Voltage	VEBO	5.0			Vdc
Collector Current Ð Continuous	IC	200			mAdc
Total Device Dissipation @ TA = 25°C	PD	625			mW
Derate above 25°C		5.0		mW/°C
Total Power Dissipation @ TA = 60°C	PD	250			mW
Total Device Dissipation @ TC = 25°C	PD	1.5			Watts
Derate above 25°C		12		mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150			°C
Temperature Range
THERMAL CHARACTERISTICS(1)
Characteristic	Symbol	Max			Unit
Thermal Resistance, Junction to	RqJA	200			°C/W
Ambient
Thermal Resistance, Junction to Case	RqJC	83.3			°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N3905

2N3906*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage (2)	V	40	Ð	Vdc
(IC = 1.0 mAdc, IB = 0)	(BR)CEO
Collector± Base Breakdown Voltage	V(BR)CBO	40	Ð	Vdc
(IC = 10 mAdc, IE = 0)
Emitter± Base Breakdown Voltage	V(BR)EBO	5.0	Ð	Vdc
(IE = 10 mAdc, IC = 0)
Base Cutoff Current	IBL	Ð	50	nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current	ICEX	Ð	50	nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)

1.Indicates Data in addition to JEDEC Requirements.

2.Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

2N3905	2N3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
				Characteristic		Symbol	Min	Max	Unit
ON CHARACTERISTICS(1)
DC Current Gain						hFE			Ð
(IC = 0.1 mAdc, VCE = 1.0 Vdc)					2N3905		30	Ð
					2N3906		60	Ð
(IC = 1.0 mAdc, VCE = 1.0 Vdc)					2N3905		40	Ð
					2N3906		80	Ð
(IC = 10 mAdc, VCE = 1.0 Vdc)					2N3905		50	150
					2N3906		100	300
(IC = 50 mAdc, VCE = 1.0 Vdc)					2N3905		30	Ð
					2N3906		60	Ð
(IC = 100 mAdc, VCE = 1.0 Vdc)					2N3905		15	Ð
					2N3906		30	Ð
Collector± Emitter Saturation Voltage						VCE(sat)			Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)							Ð	0.25
(IC = 50 mAdc, IB = 5.0 mAdc							Ð	0.4
Base ± Emitter Saturation Voltage						VBE(sat)			Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)							0.65	0.85
(IC = 50 mAdc, IB = 5.0 mAdc)							Ð	0.95
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product						fT			MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)					2N3905		200	Ð
					2N3906		250	Ð
Output Capacitance						Cobo	Ð	4.5	pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance						Cibo	Ð	10.0	pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance						hie			k Ω
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)					2N3905		0.5	8.0
					2N3906		2.0	12
Voltage Feedback Ratio						h			X 10± 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)					2N3905	re	0.1	5.0
					2N3906		0.1	10
Small±Signal Current Gain						hfe			Ð
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)					2N3905		50	200
					2N3906		100	400
Output Admittance						hoe			mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)					2N3905		1.0	40
					2N3906		3.0	60
Noise Figure						NF			dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)					2N3905		Ð	5.0
					2N3906		Ð	4.0
SWITCHING CHARACTERISTICS
Delay Time		(VCC = 3.0 Vdc, VBE = 0.5 Vdc,				td	Ð	35	ns
Rise Time		IC = 10 mAdc, IB1 = 1.0 mAdc)				tr	Ð	35	ns
Storage Time					2N3905	ts	Ð	200	ns
					2N3906		Ð	225
		(VCC = 3.0 Vdc, IC = 10 mAdc,
Fall Time						tf	Ð	60	ns
		I = I	B2	= 1.0 mAd	2N3905
		B1			2N3906		Ð	75

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data