MJW21195 |
(PNP) |
MJW21196 |
(NPN) |
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter |
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technology and are specifically designed for high power audio output, |
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disk head positioners and linear applications. |
http://onsemi.com |
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Features |
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• Total Harmonic Distortion Characterized |
16 AMPERES |
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• High DC Current Gain − hFE = 20 Min @ IC = 8 Adc |
COMPLEMENTARY |
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• Excellent Gain Linearity |
SILICON POWER TRANSISTORS |
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• High SOA: 2.25 A, 80 V, 1 Second |
250 VOLTS, 200 WATTS |
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• Pb−Free Packages are Available* |
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MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector−Emitter Voltage |
VCEO |
250 |
Vdc |
Collector−Base Voltage |
VCBO |
400 |
Vdc |
Emitter−Base Voltage |
VEBO |
5.0 |
Vdc |
Collector−Emitter Voltage − 1.5 V |
VCEX |
400 |
Vdc |
Collector Current − Continuous |
IC |
16 |
Adc |
− Peak (Note 1) |
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30 |
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Base Current − Continuous |
IB |
5.0 |
Adc |
Total Power Dissipation @ TC = 25°C |
PD |
200 |
W |
Derate Above 25°C |
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1.43 |
W/°C |
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Operating and Storage Junction |
TJ, Tstg |
− 65 to +150 |
°C |
Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction−to−Case |
RqJC |
0.7 |
°C/W |
Thermal Resistance, Junction−to−Ambient |
RqJA |
40 |
°C/W |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
1
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3 TO−247
CASE 340L
MARKING DIAGRAM
MJW2119x
AYWWG
1 BASE 3 EMITTER
2COLLECTOR
x= 5 or 6
A |
= Assembly Location |
Y |
= Year |
WW |
= Work Week |
G |
= Pb−Free Package |
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ORDERING INFORMATION
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Device |
Package |
Shipping |
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MJW21195 |
TO−247 |
30 Units/Rail |
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MJW21195G |
TO−247 |
30 Units/Rail |
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(Pb−Free) |
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MJW21196 |
TO−247 |
30 Units/Rail |
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MJW21196G |
TO−247 |
30 Units/Rail |
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(Pb−Free) |
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*For additional information on our Pb−Free strategy and soldering details, please |
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download the ON Semiconductor Soldering and |
Mounting Techniques |
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Preferred devices are recommended choices for future use |
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Reference Manual, SOLDERRM/D. |
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and best overall value. |
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♥ Semiconductor Components Industries, LLC, 2006 |
1 |
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Publication Order Number: |
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January, 2006 − Rev. 2 |
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MJW21195/D |
MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Typical |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) |
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VCEO(sus) |
250 |
− |
− |
Vdc |
Collector Cutoff Current (VCE = 200 Vdc, IB = 0) |
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ICEO |
− |
− |
100 |
mAdc |
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) |
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IEBO |
− |
− |
50 |
mAdc |
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) |
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ICEX |
− |
− |
50 |
mAdc |
SECOND BREAKDOWN |
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Second Breakdown Collector Current with Base Forward Biased |
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IS/b |
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Adc |
(VCE = 50 Vdc, t = 1 s (non−repetitive) |
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4.0 |
− |
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(VCE = 80 Vdc, t = 1 s (non−repetitive) |
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2.25 |
− |
− |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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(IC = 8 Adc, VCE = 5 Vdc) |
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20 |
− |
80 |
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(IC = 16 Adc, IB = 5 Adc) |
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8 |
− |
− |
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Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) |
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VBE(on) |
− |
− |
2.0 |
Vdc |
Collector−Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 8 Adc, IB = 0.8 Adc) |
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− |
− |
1.0 |
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(IC = 16 Adc, IB = 3.2 Adc) |
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− |
− |
3 |
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DYNAMIC CHARACTERISTICS |
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Total Harmonic Distortion at the Output |
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THD |
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% |
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS |
hFE |
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− |
0.8 |
− |
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unmatched |
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(Matched pair hFE = 50 @ 5 A/5 V) |
hFE |
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0.08 |
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matched |
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Current Gain Bandwidth Product |
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fT |
4 |
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− |
MHz |
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) |
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Output Capacitance |
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Cob |
− |
− |
500 |
pF |
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) |
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http://onsemi.com
2
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
FT, CURRENT BANDWIDTH PRODUCT (MHz)
PNP MJW21195
6.5 |
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6.0 |
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5.5 |
VCE = 10 V |
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5.0 |
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4.5 |
VCE = 5 V |
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4.0 |
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3.5
3.0TJ = 25°C ftest = 1 MHz
2.5
2.0
0.1 |
1.0 |
10 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 1. Typical Current Gain
Bandwidth Product
FT, CURRENT BANDWIDTH PRODUCT (MHz)
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NPN MJW21196 |
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7.5 |
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7.0 |
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VCE = 10 V |
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6.5 |
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6.0 |
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5.5 |
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VCE = 5 V |
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5.0 |
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4.5 |
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4.0 |
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3.5 |
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3.0 |
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TJ = 25°C |
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2.5 |
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2.0 |
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ftest = 1 MHz |
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1.5 |
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1.0 |
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0.1 |
1.0 |
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10 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW21195 |
NPN MJW21196 |
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1000 |
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1000 |
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GAIN |
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GAIN |
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CURRENT |
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25°C |
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CURRENT |
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25°C |
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TJ = 100°C |
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TJ = 100°C |
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100 |
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100 |
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, DC |
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, DC |
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FE |
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−25 °C |
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FE |
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−25 °C |
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h |
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h |
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VCE = 20 V |
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VCE = 20 V |
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10 |
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10 |
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0.1 |
1.0 |
10 |
100 |
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0.1 |
1.0 |
10 |
100 |
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IC, COLLECTOR CURRENT (AMPS) |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 3. DC Current Gain, VCE = 20 V |
Figure 4. DC Current Gain, VCE = 20 V |
PNP MJW21195 |
NPN MJW21196 |
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1000 |
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1000 |
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GAIN |
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GAIN |
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CURRENT |
100 |
TJ = 100°C |
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CURRENT |
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TJ = 100°C |
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100 |
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25°C |
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25°C |
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FE |
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−25 |
°C |
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FE |
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−25 °C |
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h |
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VCE = 5 V |
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VCE = 5 V |
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10 |
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10 |
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0.1 |
1.0 |
10 |
100 |
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0.1 |
1.0 |
10 |
100 |
IC, COLLECTOR CURRENT (AMPS) |
IC, COLLECTOR CURRENT (AMPS) |
Figure 5. DC Current Gain, VCE = 5 V |
Figure 6. DC Current Gain, VCE = 5 V |
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http://onsemi.com |
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3