ON Semiconductor MJW21195, MJW21195G, MJW21196, MJW21196G Service Manual

0 (0)

MJW21195

(PNP)

MJW21196

(NPN)

Preferred Devices

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter

 

technology and are specifically designed for high power audio output,

 

disk head positioners and linear applications.

http://onsemi.com

 

Features

 

 

Total Harmonic Distortion Characterized

16 AMPERES

High DC Current Gain − hFE = 20 Min @ IC = 8 Adc

COMPLEMENTARY

Excellent Gain Linearity

SILICON POWER TRANSISTORS

High SOA: 2.25 A, 80 V, 1 Second

250 VOLTS, 200 WATTS

Pb−Free Packages are Available*

 

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector−Emitter Voltage

VCEO

250

Vdc

Collector−Base Voltage

VCBO

400

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector−Emitter Voltage − 1.5 V

VCEX

400

Vdc

Collector Current − Continuous

IC

16

Adc

− Peak (Note 1)

 

30

 

 

 

 

 

Base Current − Continuous

IB

5.0

Adc

Total Power Dissipation @ TC = 25°C

PD

200

W

Derate Above 25°C

 

1.43

W/°C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

− 65 to +150

°C

Temperature Range

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Case

RqJC

0.7

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

40

°C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.

1

2

3 TO−247

CASE 340L

MARKING DIAGRAM

MJW2119x

AYWWG

1 BASE 3 EMITTER

2COLLECTOR

x= 5 or 6

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

 

 

ORDERING INFORMATION

 

 

 

Device

Package

Shipping

 

 

 

 

 

 

 

 

 

MJW21195

TO−247

30 Units/Rail

 

 

 

 

 

 

 

 

 

MJW21195G

TO−247

30 Units/Rail

 

 

 

 

(Pb−Free)

 

 

 

 

 

 

 

 

 

 

MJW21196

TO−247

30 Units/Rail

 

 

 

 

 

 

 

 

 

MJW21196G

TO−247

30 Units/Rail

 

 

 

 

(Pb−Free)

 

*For additional information on our Pb−Free strategy and soldering details, please

 

 

 

 

 

 

download the ON Semiconductor Soldering and

Mounting Techniques

 

Preferred devices are recommended choices for future use

Reference Manual, SOLDERRM/D.

 

 

and best overall value.

 

 

 

 

 

 

 

Semiconductor Components Industries, LLC, 2006

1

 

 

Publication Order Number:

January, 2006 − Rev. 2

 

 

 

 

MJW21195/D

MJW21195 (PNP) MJW21196 (NPN)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

 

Symbol

Min

Typical

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)

 

VCEO(sus)

250

Vdc

Collector Cutoff Current (VCE = 200 Vdc, IB = 0)

 

ICEO

100

mAdc

Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)

 

IEBO

50

mAdc

Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

 

ICEX

50

mAdc

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

 

IS/b

 

 

 

Adc

(VCE = 50 Vdc, t = 1 s (non−repetitive)

 

 

4.0

 

(VCE = 80 Vdc, t = 1 s (non−repetitive)

 

 

2.25

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

 

 

(IC = 8 Adc, VCE = 5 Vdc)

 

 

20

80

 

(IC = 16 Adc, IB = 5 Adc)

 

 

8

 

Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)

 

VBE(on)

2.0

Vdc

Collector−Emitter Saturation Voltage

 

VCE(sat)

 

 

 

Vdc

(IC = 8 Adc, IB = 0.8 Adc)

 

 

1.0

 

(IC = 16 Adc, IB = 3.2 Adc)

 

 

3

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Total Harmonic Distortion at the Output

 

THD

 

 

 

%

VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS

hFE

 

0.8

 

 

unmatched

 

 

(Matched pair hFE = 50 @ 5 A/5 V)

hFE

 

0.08

 

 

matched

 

 

 

 

 

 

 

 

 

Current Gain Bandwidth Product

 

fT

4

MHz

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

 

 

 

 

 

 

Output Capacitance

 

Cob

500

pF

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

 

 

 

 

 

 

http://onsemi.com

2

ON Semiconductor MJW21195, MJW21195G, MJW21196, MJW21196G Service Manual

MJW21195 (PNP) MJW21196 (NPN)

TYPICAL CHARACTERISTICS

FT, CURRENT BANDWIDTH PRODUCT (MHz)

PNP MJW21195

6.5

 

6.0

 

5.5

VCE = 10 V

 

5.0

 

4.5

VCE = 5 V

 

4.0

 

3.5

3.0TJ = 25°C ftest = 1 MHz

2.5

2.0

0.1

1.0

10

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 1. Typical Current Gain

Bandwidth Product

FT, CURRENT BANDWIDTH PRODUCT (MHz)

 

 

 

 

 

 

NPN MJW21196

 

 

7.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 10 V

 

 

 

 

 

 

 

 

 

6.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 5 V

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

ftest = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

1.0

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 2. Typical Current Gain

Bandwidth Product

PNP MJW21195

NPN MJW21196

 

1000

 

 

 

 

1000

 

 

 

GAIN

 

 

 

 

GAIN

 

 

 

 

CURRENT

 

 

25°C

 

CURRENT

 

 

25°C

 

 

 

 

TJ = 100°C

 

 

 

TJ = 100°C

 

 

 

100

 

 

 

 

100

 

 

, DC

 

 

 

 

, DC

 

 

 

 

FE

 

 

−25 °C

 

FE

 

−25 °C

 

 

h

 

 

 

 

h

 

 

 

 

 

VCE = 20 V

 

 

 

 

VCE = 20 V

 

 

 

10

 

 

 

 

10

 

 

 

 

0.1

1.0

10

100

 

0.1

1.0

10

100

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 3. DC Current Gain, VCE = 20 V

Figure 4. DC Current Gain, VCE = 20 V

PNP MJW21195

NPN MJW21196

 

1000

 

 

 

 

1000

 

 

 

GAIN

 

 

 

 

GAIN

 

 

 

 

CURRENT

100

TJ = 100°C

 

CURRENT

 

TJ = 100°C

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

, DC

 

 

25°C

 

, DC

 

 

 

25°C

 

 

 

 

 

 

 

 

FE

 

−25

°C

 

FE

 

−25 °C

 

 

h

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 5 V

 

 

 

 

VCE = 5 V

 

 

 

10

 

 

 

 

10

 

 

 

 

0.1

1.0

10

100

 

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V

Figure 6. DC Current Gain, VCE = 5 V

 

 

http://onsemi.com

 

3

Loading...
+ 4 hidden pages