ON Semiconductor BC327-25ZL1, BC327-25RL1, BC327ZL1, BC327RL1, BC327-16ZL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC327/D

Amplifier	Transistors
PNP Silicon
						COLLECTOR
							1
				2
				BASE
							3
							EMITTER
MAXIMUM RATINGS
Rating		Symbol	BC327		BC328				Unit
Collector± Emitter Voltage		VCEO	±45		±25					Vdc
Collector± Base Voltage		VCBO	±50		±30					Vdc
Emitter± Base Voltage		VEBO	±5.0							Vdc
Collector Current Ð Continuous		IC	±800						mAdc
Total Device Dissipation @ TA = 25°C		PD	625							mW
Derate above 25°C				5.0				mW/°C
Total Device Dissipation @ TC = 25°C		PD		1.5					Watt
Derate above 25°C				12				mW/°C
Operating and Storage Junction		TJ, Tstg	± 55 to +150							°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic		Symbol	Max						Unit
Thermal Resistance, Junction to Ambient		RqJA	200						°C/W
Thermal Resistance, Junction to Case		RqJC	83.3						°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC327,-16,-25 BC328,-16,-25

1

2 3

CASE 29±04, STYLE 17

TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		V(BR)CEO				Vdc
(IC = ±10 mA, IB = 0)	BC327		±45	Ð	Ð
	BC328		±25	Ð	Ð
Collector± Emitter Breakdown Voltage		V(BR)CES				Vdc
(IC = ±100 μA, IE = 0)	BC327		±50	Ð	Ð
	BC328		±30	Ð	Ð
Emitter± Base Breakdown Voltage		V(BR)EBO	±5.0	Ð	Ð	Vdc
(IE = ±10 mA, IC = 0)
Collector Cutoff Current		ICBO				nAdc
(VCB = ±30 V, IE = 0)	BC327		Ð	Ð	±100
(VCB = ±20 V, IE = 0)	BC328		Ð	Ð	±100
Collector Cutoff Current		ICES				nAdc
(VCE = ±45 V, VBE = 0)	BC327		Ð	Ð	±100
(VCE = ±25 V, VBE = 0)	BC328		Ð	Ð	±100
Emitter Cutoff Current		IEBO	Ð	Ð	±100	nAdc
(VEB = ±4.0 V, IC = 0)

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC327,-16,-25 BC328,-16,-25

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

DC Current Gain		hFE				Ð
(IC = ±100 mA, VCE = ±1.0 V)	BC327/BC328		100	Ð	630
	BC327±16/BC328±16		100	Ð	250
	BC327±25/BC328±25		160	Ð	400
(IC = ±300 mA, VCE = ±1.0 V)			40	Ð	Ð
Base±Emitter On Voltage		VBE(on)	Ð	Ð	±1.2	Vdc
(IC = ±300 mA, VCE = ±1.0 V)
Collector± Emitter Saturation Voltage		VCE(sat)	Ð	Ð	±0.7	Vdc
(IC = ±500 mA, IB = ±50 mA)
SMALL±SIGNAL CHARACTERISTICS
Output Capacitance		Cob	Ð	11	Ð	pF
(VCB = ±10 V, IE = 0, f = 1.0 MHz)
Current± Gain Ð Bandwidth Product		fT	Ð	260	Ð	MHz
(IC = ±10 mA, VCE = ±5.0 V, f = 100 MHz)

NORMALIZED EFFECTIVE TRANSIENT	THERMAL RESISTANCE
r(t),

1.0
0.7		D = 0.5
0.5
0.3		0.2
0.2		0.1
												θJC(t) = (t) θJC
0.1	0.05
									P(pk)			θJC = 100°C/W MAX
0.07	0.02
												θ	(t) = r(t) θ
0.05			SINGLE PULSE										JA	JA
										t		θJA = 375°C/W MAX
		0.01								1		D CURVES APPLY FOR POWER
0.03			SINGLE PULSE							t2
												PULSE TRAIN SHOWN
0.02									DUTY CYCLE, D = t1/t2			READ TIME AT t1
0.01												TJ(pk) ± TC = P(pk) θJC(t)
0.001		0.002	0.005	0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100
								t, TIME (SECONDS)

Figure 1. Thermal Response

	±1000	1.0 s		1.0 ms	TJ = 135°C
(mA)					100 μs
CURRENT			dc
			TC = 25°C
	±100	dc
COLLECTOR		TA = 25°C
		CURRENT LIMIT
,
C		THERMAL LIMIT
I
		SECOND BREAKDOWN LIMIT
	±10	(APPLIES BELOW RATED VCEO)
	±1.0	±3.0	±10	±30	±100
		VCE, COLLECTOR±EMITTER VOLTAGE

	1000
				VCE = ±1.0 V
				TA = 25°C
GAIN
, DC CURRENT	100
FE
h
	10
	±0.1	±1.0	±10	±100	±1000

IC, COLLECTOR CURRENT (mA)

Figure 2. Active Region Ð Safe Operating Area

Figure 3. DC Current Gain

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data