ON Semiconductor BC548CZL1, BC548CRL, BC548C, BC547CZL1, BC548BZL1 Datasheet

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ON Semiconductor BC548CZL1, BC548CRL, BC548C, BC547CZL1, BC548BZL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC546/D

Amplifier Transistors

 

 

 

 

 

 

 

 

BC546,

B

 

NPN Silicon

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BC547,

A,

B,

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BC548,

A,

B,

C

 

 

 

 

 

 

COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

EMITTER

 

 

 

 

 

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

2 3

 

 

 

 

 

BC

BC

 

 

BC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

546

547

 

548

Unit

 

CASE 29±04, STYLE 17

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector± Emitter Voltage

VCEO

65

45

 

30

Vdc

 

TO±92 (TO±226AA)

 

 

 

 

 

 

 

 

Collector± Base Voltage

VCBO

80

50

 

30

Vdc

 

 

 

 

 

 

 

 

 

 

 

Emitter± Base Voltage

VEBO

 

6.0

 

 

 

Vdc

 

 

 

 

 

Collector Current Ð Continuous

IC

 

100

 

 

 

mAdc

 

 

 

 

 

Total Device Dissipation @ TA = 25°C

PD

 

625

 

 

 

mW

 

 

 

 

 

Derate above 25°C

 

 

5.0

 

 

 

mW/°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

 

1.5

 

 

 

Watt

 

 

 

 

 

Derate above 25°C

 

 

12

 

 

 

mW/°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

 

°C

 

 

 

 

 

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

 

Max

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient

RqJA

 

200

 

 

 

°C/W

 

 

 

 

 

Thermal Resistance, Junction to Case

RqJC

 

83.3

 

 

 

°C/W

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage

BC546

V(BR)CEO

65

Ð

Ð

V

(IC = 1.0 mA, IB = 0)

BC547

 

45

Ð

Ð

 

 

BC548

 

30

Ð

Ð

 

 

 

 

 

 

 

 

Collector± Base Breakdown Voltage

BC546

V(BR)CBO

80

Ð

Ð

V

(IC = 100 μAdc)

BC547

 

50

Ð

Ð

 

 

BC548

 

30

Ð

Ð

 

 

 

 

 

 

 

 

Emitter± Base Breakdown Voltage

BC546

V(BR)EBO

6.0

Ð

Ð

V

(IE = 10 mA, IC = 0)

BC547

 

6.0

Ð

Ð

 

 

BC548

 

6.0

Ð

Ð

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICES

 

 

 

 

(VCE = 70 V, VBE = 0)

BC546

 

Ð

0.2

15

nA

(VCE = 50 V, VBE = 0)

BC547

 

Ð

0.2

15

 

(VCE = 35 V, VBE = 0)

BC548

 

Ð

0.2

15

 

(VCE = 30 V, TA = 125°C)

BC546/547/548

 

Ð

Ð

4.0

μA

REV 1

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC546, B BC547, A, B, C BC548, A, B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS

DC Current Gain

 

hFE

 

 

 

Ð

(IC = 10 μA, VCE = 5.0 V)

BC547A/548A

 

Ð

90

Ð

 

 

BC546B/547B/548B

 

Ð

150

Ð

 

 

BC548C

 

Ð

270

Ð

 

(IC = 2.0 mA, VCE = 5.0 V)

BC546

 

110

Ð

450

 

 

BC547

 

110

Ð

800

 

 

BC548

 

110

Ð

800

 

 

BC547A/548A

 

110

180

220

 

 

BC546B/547B/548B

 

200

290

450

 

 

BC547C/BC548C

 

420

520

800

 

(IC = 100 mA, VCE = 5.0 V)

BC547A/548A

 

Ð

120

Ð

 

 

BC546B/547B/548B

 

Ð

180

Ð

 

 

BC548C

 

Ð

300

Ð

 

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage

 

VCE(sat)

 

 

 

V

(IC = 10 mA, IB = 0.5 mA)

 

 

Ð

0.09

0.25

 

(IC = 100 mA, IB = 5.0 mA)

 

 

Ð

0.2

0.6

 

(IC = 10 mA, IB = See Note 1)

 

 

Ð

0.3

0.6

 

Base ± Emitter Saturation Voltage

 

VBE(sat)

Ð

0.7

Ð

V

(IC = 10 mA, IB = 0.5 mA)

 

 

 

 

 

 

Base±Emitter On Voltage

 

VBE(on)

 

 

 

V

(IC = 2.0 mA, VCE = 5.0 V)

 

 

0.55

Ð

0.7

 

(IC = 10 mA, VCE = 5.0 V)

 

 

Ð

Ð

0.77

 

SMALL±SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

 

 

 

MHz

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

BC546

 

150

300

Ð

 

 

BC547

 

150

300

Ð

 

 

BC548

 

150

300

Ð

 

 

 

 

 

 

 

 

Output Capacitance

 

Cobo

Ð

1.7

4.5

pF

(VCB = 10 V, IC = 0, f = 1.0 MHz)

 

 

 

 

 

 

Input Capacitance

 

Cibo

Ð

10

Ð

pF

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

 

 

 

 

 

 

Small±Signal Current Gain

 

hfe

 

 

 

Ð

(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

BC546

 

125

Ð

500

 

 

BC547/548

 

125

Ð

900

 

 

BC547A/548A

 

125

220

260

 

 

BC546B/547B/548B

 

240

330

500

 

 

BC547C/548C

 

450

600

900

 

 

 

 

 

 

 

 

Noise Figure

 

NF

 

 

 

dB

(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,

BC546

 

Ð

2.0

10

 

f = 1.0 kHz, f = 200 Hz)

BC547

 

Ð

2.0

10

 

 

BC548

 

Ð

2.0

10

 

 

 

 

 

 

 

 

Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

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