MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCP56T1/D
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.
•High Current: 1.0 Amp
•The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
•Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel |
COLLECTOR 2,4 |
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Use BCP56T3 to order the 13 inch/4000 unit reel |
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• PNP Complement is BCP53T1 |
BASE |
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1 |
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EMITTER 3 |
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted) |
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BCP56T1 SERIES
Motorola Preferred Device
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
Rating |
Symbol |
Value |
Unit |
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Collector-Emitter Voltage |
VCEO |
80 |
Vdc |
Collector-Base Voltage |
VCBO |
100 |
Vdc |
Emitter-Base Voltage |
VEBO |
5 |
Vdc |
Collector Current |
IC |
1 |
Adc |
Total Power Dissipation @ T = 25°C(1) |
P |
1.5 |
Watts |
A |
D |
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Derate above 25°C |
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12 |
mW/°C |
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Operating and Storage Temperature Range |
TJ, Tstg |
± 65 to 150 |
°C |
DEVICE MARKING |
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BCP56T1 = BH |
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BCP56-10T1 = BK |
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BCP56-16T1 = BL |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance |
RθJA |
83.3 |
°C/W |
Junction-to-Ambient (surface mounted) |
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Maximum Temperature for Soldering Purposes |
TL |
260 |
°C |
Time in Solder Bath |
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10 |
Sec |
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1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
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Small±Signal Transistors, FETs and Diodes Device Data |
1 |
Motorola, Inc. 1996 |
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BCP56T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Base Breakdown Voltage |
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V(BR)CBO |
100 |
Ð |
Ð |
Vdc |
(IC = 100 μAdc, IE = 0) |
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Collector-Emitter Breakdown Voltage |
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V(BR)CEO |
80 |
Ð |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
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Emitter-Base Breakdown Voltage |
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V(BR)EBO |
5.0 |
Ð |
Ð |
Vdc |
(IE = 10 μAdc, IC = 0) |
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Collector-Base Cutoff Current |
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ICBO |
Ð |
Ð |
100 |
nAdc |
(VCB = 30 Vdc, IE = 0) |
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Emitter-Base Cutoff Current |
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IEBO |
Ð |
Ð |
10 |
μAdc |
(VEB = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (2) |
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DC Current Gain |
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hFE |
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Ð |
(IC = 5.0 mA, VCE = 2.0 V) |
All Part Types |
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25 |
Ð |
Ð |
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(IC = 150 mA, VCE = 2.0 V) |
BCP56T1 |
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40 |
Ð |
250 |
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BCP56-10T1 |
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63 |
Ð |
160 |
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BCP56-16T1 |
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100 |
Ð |
250 |
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(IC = 500 mA, VCE = 2.0 V) |
All Types |
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25 |
Ð |
Ð |
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Collector-Emitter Saturation Voltage |
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VCE(sat) |
Ð |
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0.5 |
Vdc |
(IC = 500 mAdc, IB = 50 mAdc) |
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Base-Emitter On Voltage |
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VBE(on) |
Ð |
Ð |
1.0 |
Vdc |
(IC = 500 mAdc, VCE = 2.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current-Gain Ð Bandwidth Product |
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fT |
Ð |
130 |
Ð |
MHz |
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) |
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2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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