ON Semiconductor BD676, BD676A, BD678, BD678A, BD680 Service Manual

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T

Plastic Medium-Power

Silicon PNP Darlingtons

This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.

Features

• High DC Current Gain −

hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc

•Monolithic Construction

•BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681

•BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

•Pb−Free Package are Available*

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO		Vdc
BD676, BD676A		45
BD678, BD678A		60
BD680, BD680A		80
BD682		100
Collector-Base Voltage	VCB		Vdc
BD676, BD676A		45
BD678, BD678A		60
BD680, BD680A		80
BD682		100
Emitter-Base Voltage	VEB	5.0	Vdc
Collector Current	IC	4.0	Adc
Base Current	IB	0.1	Adc
Total Device Dissipation	PD
@ TC = 25°C		40	W
Derate above 25°C		0.32	W/°C
Operating and Storage Junction	TJ, Tstg	−55 to +150	°C
Temperature Range
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance,	RqJC	3.13	°C/W
Junction−to−Case

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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4.0 AMP DARLINGTON POWER TRANSISTORS PNP SILICON

45, 60, 80, 100 VOLT, 40 WATT

COLLECTOR 2

BASE 3

EMITTER 1

TO−225AA

CASE 77

STYLE 1

3 2 1

MARKING DIAGRAMS

	YWW	YWW
		B
	BD6xxG
		BD6xxG

BD6xx	= Device Code
	xx = 76, 76A, 78, 78A,
	80, 80A, 82, or 82T
Y	= Year
WW	= Work Week
G	= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

♥ Semiconductor Components Industries, LLC, 2008	Publication Order Number:
September, 2008 − Rev. 13	BD676/D

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min		Max		Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)	BD676, 676A	BVCEO	45		−		Vdc
(IC = 50 mAdc, IB = 0)	BD678, 678A		60		−
	BD680, 680A		80		−
	BD682		100		−
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)		ICEO	−		500		mAdc
Collector Cutoff Current		ICBO					mAdc
(VCB = Rated BVCEO, IE = 0)			−		0.2
(VCB = Rated BVCEO. IE = 0, TC = 100°C)			−		2.0
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)		IEBO	−		2.0		mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)		hFE
(IC = 1.5 Adc, VCE = 3.0 Vdc)	BD676, 678, 680, 682		750		−		−
(IC = 2.0 Adc, VCE = 3.0 Vdc)	BD676A, 678A, 680A		750		−		−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)	BD678, 680, 682	VCE(sat)	−		2.5		Vdc
(IC = 2.0 Adc, IB = 40 mAdc)	BD676A, 678A, 680A		−		2.8
Base−Emitter On Voltage (Note 1)		VBE(on)					Vdc
(IC = 1.5 Adc, VCE = 3.0 Vdc)	BD678, 680, 682		−		2.5
(IC = 2.0 Adc, VCE = 3.0 Vdc)	BD676A, 678A, 680A		−		2.5
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)		hfe	1.0		−		−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

	50												5.0
(WATTS)DISSIPATIONPOWER	45											(AMP)CURRENTCOLLECTOR
	40												2.0
	35												1.0
	30
																BONDING WIRE LIMIT
	25												0.5			THERMAL LIMIT at TC = 25°C
	20															SECONDARY BREAKDOWN LIMIT
	15												0.2					BD676, 676A
D	10											C		T		= 25°C
																		BD678, 678A
,												,	0.1		C
P	5.0											I						BD680, 680A
	0											0.05							BD682
		30	45	60	75	90	105	120	135	150	165					2.0	5.0	10	20	50	100
	15												1.0
				TC, CASE TEMPERATURE (°C)												VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Power Temperature Derating

Figure 2. DC Safe Operating Area

There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

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