MJ21193
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 5
1 Publication Order Number:
MJ21193/D
MJ21193, MJ21194
Preferred Device
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain − h
FE
= 25 Min @ I
C
= 8 Adc
• Excellent Gain Linearity
• High SOA: 2.5 A, 80 V, 1 Second
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
400 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
400 Vdc
Collector Current − Continuous
Peak (Note 1)
I
C
16
30
Adc
Base Current − Continuous I
B
5 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
250
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
− 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAM
TO−204AA (TO−3)
CASE 1−07
STYLE 1
16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
†
ORDERING INFORMATION
MJ21193 TO−3 100 Units / Tray
MJ21193G TO−3
(Pb−Free)
100 Units / Tray
MJ21194 TO−3 100 Units / Tray
MJ21194G TO−3
(Pb−Free)
100 Units / Tray
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MJ2119xG
AYYWW
MEX
MJ2119x = Device Code
x = 3 or 4
G=Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
MJ21193, MJ21194
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250 − − Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
I
CEO
− − 100
mAdc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
− 100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
I
S/b
5
2.5
−
−
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
h
FE
25
8
−
−
75
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
− − 2.2 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
−
−
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
h
FE
unmatched
(Matched pair h
FE
= 50 @ 5 A/5 V) h
FE
matched
T
HD
−
−
0.8
0.08
−
−
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 500 pF
NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
I
C
COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
PNP MJ21193
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
NPN MJ21194
I
C
COLLECTOR CURRENT (AMPS)
0.1 1.0 10
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
8.0
7.0
6.0
4.0
3.0
5.0
1.0
0
2.0
0.1 1.0 10
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 5 V
10 V
T
J
= 25°C
f
test
= 1 MHz
Loading...