ON Semiconductor BDX53B, BDX54B, BDX54C, BDX53C Service Manual

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

These devices are designed for general-purpose amplifier and low-speed switching applications.

Features

• High DC Current Gain -

hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector Emitter Sustaining Voltage - @ 100 mAdc

VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B = 100 Vdc (Min) - BDX53C, 54C

• Low Collector-Emitter Saturation Voltage -

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating	Symbol	Value		Unit
Collector-Emitter Voltage	VCEO	80		Vdc
BDX53B, BDX54B
BDX53C, BDX54C		100
Collector-Base Voltage	VCB	80		Vdc
BDX53B, BDX54B
BDX53C, BDX54C		100
Emitter-Base Voltage	VEB	5.0		Vdc
Collector Current - Continuous	IC	8.0		Adc
- Peak		12
Base Current	IB	0.2		Adc
Total Device Dissipation @ TC = 25°C	PD	65		W
Derate above 25°C		0.48		W/°C
Operating and Storage Junction	TJ, Tstg	-65 to +150		°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction-to-Ambient	RqJA	70	°C/W
Thermal Resistance, Junction-to-Case	RqJC	1.92	°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

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DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS, 65 WATTS

4

TO-220AB

CASE 221A

STYLE 1

1

2

3

MARKING DIAGRAM & PIN ASSIGNMENT

4

Collector

BDX5xyG

AY WW

	1		3
	Base	2	Emitter
		Collector
BDX5xy =		Device Code
		x = 3 or 4
		y = B or C
A	=	Assembly Location

Y= Year

WW = Work Week

G= Pb-Free Package

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

♥ Semiconductor Components Industries, LLC, 2007	1	Publication Order Number:
November, 2007 - Rev. 13		BDX53B/D

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
	TA	TC
	4.0	80
(WATTS)	3.0	60
DISSIPATION						TC
	2.0	40
, POWER					TA
	1.0	20
D
P
		0	20	40	60	80	100	120	140	160
		0

T, TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)		VCEO(sus)			Vdc
(IC = 100 mAdc, IB = 0)	BDX53B, BDX54B		80	-
	BDX53C, BDX54C		100	-
Collector Cutoff Current		ICEO			mAdc
(VCE = 40 Vdc, IB = 0)	BDX53B, BDX54B		-	0.5
(VCE = 50 Vdc, IB = 0)	BDX53C, BDX54C		-	0.5
Collector Cutoff Current		ICBO			mAdc
(VCB = 80 Vdc, IE = 0)	BDX53B, BDX54B		-	0.2
(VCB = 100 Vdc, IE = 0)	BDX53C, BDX54C		-	0.2
ON CHARACTERISTICS (Note 1)
DC Current Gain		hFE	750	-	-
(IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage		VCE(sat)	-	2.0	Vdc
(IC = 3.0 Adc, IB = 12 mAdc)			-	4.0
Base-Emitter Saturation Voltage		VBE(sat)	-	2.5	Vdc
(IC = 3.0 Adc, IC = 12 mA)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain		hfe	4.0	-	-
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance		Cob			pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)	BDX53B, 53C		-	300
	BDX54B, 54C		-	200

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC

5.0

ts

- 30 V

3.0

D1 MUST BE FAST RECOVERY TYPES, e.g.:

1N5825 USED ABOVE IB [ 100 mA

RC

2.0

MSD6100 USED BELOW IB [ 100 mA

SCOPE

TUT

tf

RB

s)(μ

1.0

V2

0.7

APPROX

t, TIME

0.5

+ 8.0 V

51

D1

[ 8.0 k

[ 120

0.3

0

tr

0.2

V1

+ 4.0 V

VCC = 30 V

APPROX

25 ms

0.1

IC/IB = 250

for td and tr, D1 is disconnected

IB1 = IB2

-12 V

0.07

°

td @ VBE(off) = 0 V

tr, tf v 10 ns

and V2 = 0

0.05

TJ = 25 C

DUTY CYCLE = 1.0%

For NPN test circuit reverse all polarities

0.1

0.2

0.3

0.5

0.7 1.0

2.0

3.0

5.0

7.0

10

IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Switching Times

EFFECTIVEr(t)TRANSIENT	RESISTANCETHERMAL(NORMALIZED)	1.0											DUTY CYCLE, D = t			/t	TJ(pk) - TC = P(pk) RqJC(t)
		0.02
		0.7	D = 0.5
		0.5
		0.3	0.2
		0.2	0.1
		0.1	0.05									P(pk)					RqJC(t) = r(t) RqJC
		0.07	0.02														RqJC = 1.92°C/W
		0.05											t1		SINGLE		D CURVES APPLY FOR POWER
		0.03															PULSE TRAIN SHOWN
			0.01	SINGLE PULSE									t2		PULSE		READ TIME AT t1
															1	2
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30		50	100	200	300	500	1000
		0.01
									t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

		20									100 ms
		10
(AMP)										500 ms
		5.0				5.0 ms
CURRENT
		2.0		TJ = 150°C		1.0 ms		dc
		1.0		BONDING WIRE LIMITED
, COLLECTOR		0.5		THERMALLY LIMITED @ TC = 25°C
				(SINGLE PULSE)
		0.2		SECOND BREAKDOWN LIMITED
			CURVES APPLY BELOW RATED VCEO
		0.1
C
I	0.05
								BDX53B, BDX54B
		0.02						BDX53C, BDX54C
		1.0	2.0	3.0	5.0	7.0	10	20	30	50	70 100
			VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active-Region Safe Operating Area

There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

TJ(pk) t 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

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