MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N4400/D
General Purpose Transistors
NPN Silicon
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COLLECTOR |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Unit |
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Collector± Emitter Voltage |
VCEO |
40 |
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Vdc |
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Collector± Base Voltage |
VCBO |
60 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
6.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
600 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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2N4400
2N4401*
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector± Emitter Breakdown Voltage(1) |
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V(BR)CEO |
40 |
Ð |
Vdc |
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(IC = 1.0 mAdc, IB = 0) |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
60 |
Ð |
Vdc |
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(IC = 0.1 mAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
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V(BR)EBO |
6.0 |
Ð |
Vdc |
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(IE = 0.1 mAdc, IC = 0) |
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Base Cutoff Current |
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IBEV |
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0.1 |
μAdc |
(VCE = 35 Vdc, VEB = 0.4 Vdc) |
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Collector Cutoff Current |
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ICEX |
Ð |
0.1 |
μAdc |
(VCE = 35 Vdc, VEB = 0.4 Vdc) |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
2N4400 |
2N4401 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
20 |
Ð |
Ð |
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(IC = 0.1 mAdc, VCE = 1.0 Vdc) |
2N4401 |
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(IC = 1.0 mAdc, VCE = 1.0 Vdc) |
2N4400 |
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20 |
Ð |
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2N4401 |
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40 |
Ð |
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(IC = 10 mAdc, VCE = 1.0 Vdc) |
2N4400 |
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40 |
Ð |
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2N4401 |
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80 |
Ð |
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(IC = 150 mAdc, VCE = 1.0 Vdc) |
2N4400 |
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50 |
150 |
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2N4401 |
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100 |
300 |
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(IC = 500 mAdc, VCE = 2.0 Vdc) |
2N4400 |
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20 |
Ð |
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2N4401 |
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40 |
Ð |
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Collector± Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) |
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VCE(sat) |
Ð |
0.4 |
Vdc |
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Collector± Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
0.75 |
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Base ± Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) |
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VBE(sat) |
0.75 |
0.95 |
Vdc |
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Base ± Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
1.2 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
200 |
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MHz |
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(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) |
2N4400 |
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2N4401 |
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250 |
Ð |
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Collector±Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
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Ccb |
Ð |
6.5 |
pF |
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Emitter±Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
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Ceb |
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30 |
pF |
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Input Impedance |
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hie |
0.5 |
7.5 |
k ohms |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N4400 |
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2N4401 |
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1.0 |
15 |
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Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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hre |
0.1 |
8.0 |
X 10±4 |
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Small±Signal Current Gain |
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hfe |
20 |
250 |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N4400 |
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2N4401 |
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40 |
500 |
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Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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hoe |
1.0 |
30 |
μmhos |
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SWITCHING CHARACTERISTICS |
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Delay Time |
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(VCC = 30 Vdc, VBE = 2.0 Vdc, |
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td |
Ð |
15 |
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Rise Time |
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IC = 150 mAdc, IB1 = 15 mAdc) |
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tr |
Ð |
20 |
ns |
Storage Time |
(VCC = 30 Vdc, IC = 150 mAdc, |
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ts |
Ð |
225 |
ns |
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Fall Time |
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IB1 = IB2 = 15 mAdc) |
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t |
Ð |
30 |
ns |
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f |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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SWITCHING TIME EQUIVALENT TEST CIRCUITS
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+ 30 V |
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1.0 to 100 μs, |
200 Ω |
+16 V |
1.0 to 100 μs, |
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+16 V |
DUTY CYCLE ≈ 2.0% |
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DUTY CYCLE ≈ 2.0% |
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0 |
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0 |
1.0 kΩ |
± 2.0 V |
1.0 k |
Ω |
CS* < 10 pF |
±14 V |
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< 20 ns |
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< 2.0 ns |
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Scope rise time < 4.0 ns |
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± 4.0 V |
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*Total shunt capacitance of test jig connectors, and oscilloscope |
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+ 30 V 
200 Ω
CS* < 10 pF
Figure 1. Turn±On Time |
Figure 2. Turn±Off Time |
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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