ON Semiconductor BC848CWT1, BC848BWT1, BC847BWT1, BC848AWT1, BC847AWT1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC846AWT1/D

General Purpose Transistors

NPN Silicon

	These transistors are designed for general purpose amplifier		COLLECTOR
			3
	applications. They are housed in the SOT±323/SC±70 which is
	designed for low power surface mount applications.
	1
	BASE

BC846AWT1,BWT1

BC847AWT1,BWT1,

CWT1

BC848AWT1,BWT1,

CWT1

2

MAXIMUM RATINGS

EMITTER

Rating

Symbol

BC846

BC847

BC848

Unit

3

Collector± Emitter Voltage

VCEO

65

45

30

V

Collector± Base Voltage

VCBO

80

50

30

V

1

2

Emitter± Base Voltage

VEBO

6.0

6.0

5.0

V

Collector Current Ð Continuous

IC

100

100

100

mAdc

CASE 419±02, STYLE 3

SOT±323/SC±70

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR± 5 Board, (1)

PD

150

mW

TA = 25°C

Thermal Resistance, Junction to Ambient

RqJA

833

°C/W

Total Device Dissipation

PD

2.4

mW/°C

Junction and Storage Temperature

TJ, Tstg

± 55 to +150

°C

DEVICE MARKING

BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;

BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage	BC846 Series	V(BR)CEO	65	Ð	Ð	V
(IC = 10 mA)	BC847 Series		45	Ð	Ð
	BC848 Series		30	Ð	Ð
Collector± Emitter Breakdown Voltage	BC846 Series	V(BR)CES	80	Ð	Ð	V
(IC = 10 μA, VEB = 0)	BC847 Series		50	Ð	Ð
	BC848 Series		30	Ð	Ð
Collector± Base Breakdown Voltage	BC846 Series	V(BR)CBO	80	Ð	Ð	V
(IC = 10 mA)	BC847 Series		50	Ð	Ð
	BC848 Series		30	Ð	Ð
Emitter± Base Breakdown Voltage	BC846 Series	V(BR)EBO	6.0	Ð	Ð	V
(IE = 1.0 mA)	BC847 Series		6.0	Ð	Ð
	BC848 Series		5.0	Ð	Ð
Collector Cutoff Current (VCB = 30 V)		ICBO	Ð	Ð	15	nA
(VCB = 30 V, TA = 150°C)			Ð	Ð	5.0	μA

1. FR±5 = 1.0 x 0.75 x 0.062 in

Thermal Clad is a trademark of the Bergquist Company.

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

	Characteristic	Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
DC Current Gain	BC846A, BC847A, BC848A	hFE	Ð	90	Ð	Ð
(IC = 10 μA, VCE = 5.0 V)	BC846B, BC847B, BC848B		Ð	150	Ð
	BC847C, BC848C		Ð	270	Ð
(IC = 2.0 mA, VCE = 5.0 V)	BC846A, BC847A, BC848A		110	180	220
	BC846B, BC847B, BC848B		200	290	450
	BC847C, BC848C		420	520	800
Collector± Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)		VCE(sat)	Ð	Ð	0.25	V
	(IC = 100 mA, IB = 5.0 mA)		Ð	Ð	0.6
Base ± Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)		VBE(sat)	Ð	0.7	Ð	V
	(IC = 100 mA, IB = 5.0 mA)		Ð	0.9	Ð
Base ± Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)		VBE(on)	580	660	700	mV
(IC = 10 mA, VCE = 5.0 V)			Ð	Ð	770
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product		fT	100	Ð	Ð	MHz
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)		Cobo	Ð	Ð	4.5	pF
Noise Figure (IC = 0.2 mA,	BC846A, BC847A, BC848A	NF				dB
VCE = 5.0 Vdc, RS = 2.0 kΩ,	BC846B, BC847B, BC848B		Ð	Ð	10
f = 1.0 kHz, BW = 200 Hz)	BC847C, BC848C		Ð	Ð	4.0

	2.0
GAIN	1.5							VCE = 10 V
								TA = 25°C
CURRENT	1.0
	0.8
DC	0.6
,NORMALIZED
	0.4
	0.3
FE
h
	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200
	0.2

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

(V)	2.0
			TA = 25°C
VOLTAGE
	1.6
			IC = 200 mA
COLLECTOR±EMITTER
	1.2
	IC =	IC = IC = 50 mA	IC = 100 mA
	10 mA 20 mA
	0.8
	0.4
,
CE
V
	0	0.1	1.0	10	20
	0.02

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	1.0
	0.9	TA = 25°C
	0.8		VBE(sat) @ IC/IB = 10
(VOLTS)	0.7
	0.6			VBE(on) @ VCE = 10 V
V, VOLTAGE	0.5
	0.4
	0.3
	0.2			VCE(sat) @ IC/IB = 10
	0.1
	0	0.2 0.3	0.5 0.7 1.0	2.0 3.0	5.0 7.0 10	20	30	50	70 100
	0.1
			IC, COLLECTOR CURRENT (mAdc)

Figure 2. ªSaturationº and ªOnº Voltages

°C)	1.0
		±55°C to +125°C
(mV/	1.2
COEFFICIENT	1.6
	2.0
, TEMPERATURE	2.4
	2.8
VB
θ
	0.2	1.0	10	100
		IC, COLLECTOR CURRENT (mA)

Figure 4. Base±Emitter Temperature Coefficient

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data