MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF421/D
High Voltage Transistors
PNP Silicon
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COLLECTOR |
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2 |
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3 |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
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Symbol |
BF421 |
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BF423 |
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Unit |
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Collector± Emitter Voltage |
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VCEO |
±300 |
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±250 |
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Vdc |
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Collector± Base Voltage |
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VCBO |
±300 |
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±250 |
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Vdc |
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Emitter± Base Voltage |
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VEBO |
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±5.0 |
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Vdc |
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Collector Current Ð Continuous |
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IC |
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±500 |
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mAdc |
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Total Device Dissipation |
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PD |
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625 |
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mW |
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@ TA = 25°C |
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5.0 |
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mW/°C |
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Derate above 25°C |
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Total Device Dissipation |
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PD |
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1.5 |
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Watts |
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@ TC = 25°C |
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12 |
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mW/°C |
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Derate above 25°C |
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Operating and Storage Junction |
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TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
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RqJA |
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200 |
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°C/W |
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Thermal Resistance, Junction to Case |
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RqJC |
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83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
BF421
BF423
1
2 3
CASE 29±11, STYLE 14 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage (1) |
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V |
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Vdc |
(IC = ±1.0 mAdc, IB = 0) |
BF421 |
(BR)CEO |
±300 |
Ð |
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BF423 |
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±250 |
Ð |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
±300 |
Ð |
Vdc |
(IC = ±100 mAdc, IE = 0) |
BF421 |
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BF423 |
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±250 |
Ð |
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Emitter± Base Breakdown Voltage |
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V(BR)EBO |
±5.0 |
Ð |
Vdc |
(IE = ±100 mAdc, IC = 0) |
BF421 |
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BF423 |
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±5.0 |
Ð |
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Collector Cutoff Current |
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ICBO |
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mAdc |
(VCB = ±200 Vdc, IE = 0) |
BF421 |
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Ð |
±0.01 |
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BF423 |
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Ð |
Ð |
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Emitter Cutoff Current |
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IEBO |
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nAdc |
(VEB = ±5.0 Vdc, IC = 0) |
BF421 |
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±100 |
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BF423 |
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Ð |
Ð |
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1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
REV 1
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
1 |
Motorola, Inc. 1998 |
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BF421 |
BF423 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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Ð |
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(IC = ±25 mA, VCE = ±20 Vdc) |
BF421 |
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50 |
Ð |
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BF423 |
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50 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
Ð |
±0.5 |
Vdc |
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(IC = ±20 mAdc, IB = ±2.0 mAdc) |
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Base ± Emitter Saturation Voltage |
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VBE(sat) |
Ð |
±2.0 |
Vdc |
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(IC = ±20 mA, IB = ±2.0 mA) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
60 |
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MHz |
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(IC = ±10 mAdc, VCE = ±10 Vdc, f = 20 MHz) |
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Common Emitter Feedback Capacitance |
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Cre |
Ð |
2.8 |
pF |
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(VCB = ±30 Vdc, IE = 0, f = 1.0 MHz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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