ON Semiconductor BC560CZL1, BC560C, BC560BRL1, BC559C, BC559BZL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC559B/D

Low Noise Transistors

PNP Silicon

COLLECTOR 1

2 BASE

3 EMITTER

MAXIMUM RATINGS

Rating	Symbol	BC559x		BC560C	Unit
Collector± Emitter Voltage	VCEO	±30		±45	Vdc
Collector± Base Voltage	VCBO	±30		±50	Vdc
Emitter± Base Voltage	VEBO	±5.0			Vdc
Collector Current Ð Continuous	IC	±100			mAdc
Total Device Dissipation @ TA = 25°C	PD		625		mW
Derate above 25°C			5.0		mW/°C
Total Device Dissipation @ TC = 25°C	PD		1.5		Watt
Derate above 25°C			12		mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150			°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Ambient	RqJA	200	°C/W
Thermal Resistance, Junction to Case	RqJC	83.3	°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC559B

BC559C

BC560C

1

2 3

CASE 29±04, STYLE 17 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		V(BR)CEO				Vdc
(IC = ±10 mAdc, IB = 0)	BC559B, C		±30	Ð	Ð
	BC560C		±45	Ð	Ð
Collector± Base Breakdown Voltage		V(BR)CBO				Vdc
(IC = ±10 μAdc, IE = 0)	BC559B, C		±30	Ð	Ð
	BC560C		±50	Ð	Ð
Emitter± Base Breakdown Voltage		V(BR)EBO	±5.0	Ð	Ð	Vdc
(IE = ±10 mAdc, IC = 0)
Collector Cutoff Current		ICBO
(VCB = ±30 Vdc, IE = 0)			Ð	Ð	±15	nAdc
(VCB = ±30 Vdc, IE = 0, TA = +125°C)			Ð	Ð	±5.0	μAdc
Emitter Cutoff Current		IEBO	Ð	Ð	±15	nAdc
(VEB = ±4.0 Vdc, IC = 0)

replaces BC559/D

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

BC559B	BC559C	BC560C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
		Characteristic		Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
DC Current Gain				hFE				Ð
(IC = ±10 μAdc, VCE = ±5.0 Vdc)			BC559B		100	150	Ð
			BC559C/560C		100	270	Ð
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)			BC559B		180	290	460
			BC559C/560C		380	500	800
Collector± Emitter Saturation Voltage				VCE(sat)				Vdc
(IC = ±10 mAdc, IB = ±0.5 mAdc)					Ð	±0.075	±0.25
(IC = ±10 mAdc, IB = see note 1)					Ð	±0.3	±0.6
(IC = ±100 mAdc, IB = ±5.0 mAdc, see note 2)					Ð	±0.25	Ð
Base±Emitter Saturation Voltage				VBE(sat)	Ð	±1.1	Ð	Vdc
(IC = ±100 mAdc, IB = ±5.0 mAdc)
Base±Emitter On Voltage				VBE(on)				Vdc
(IC = ±10 μAdc, VCE = ±5.0 Vdc)					Ð	±0.52	Ð
(IC = ±100 μAdc, VCE = ±5.0 Vdc)					Ð	±0.55	Ð
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)					±0.55	±0.62	±0.7
SMALL±SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product				fT	Ð	250	Ð	MHz
(IC = ±10 mAdc, VCE = ±5.0 Vdc, f = 100 MHz)
Collector±Base Capacitance				Ccbo	Ð	2.5	Ð	pF
(VCB = ±10 Vdc, IE = 0, f = 1.0 MHz)
Small±Signal Current Gain				hfe				Ð
(IC = ±2.0 mAdc, VCE = ±5.0 V, f = 1.0 kHz)			BC559B		240	330	500
			BC559C/BC560C		450	600	900
Noise Figure								dB
(IC = ±200 μAdc, VCE = ±5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)				NF1	Ð	0.5	2.0
(IC = ±200 μAdc, VCE = ±5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, f = 200 kHz)				NF2	Ð	Ð	10

NOTES:

1.IB is value for which IC = ±11 mA at VCE = ±1.0 V.

2.Pulse test = 300 μs ± Duty cycle = 2%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data