ON Semiconductor BC858CLT3, BC858CLT1, BC858ALT1, BC857BLT3, BC857BLT1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC856ALT1/D

General Purpose Transistors

PNP Silicon

COLLECTOR

3

1

BASE

2

MAXIMUM RATINGS

EMITTER

Rating

Symbol

BC856

BC857

BC858

Unit

Collector± Emitter Voltage

VCEO

±65

±45

±30

V

Collector± Base Voltage

VCBO

±80

±50

±30

V

Emitter± Base Voltage

VEBO

±5.0

±5.0

±5.0

V

Collector Current Ð Continuous

IC

±100

±100

±100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR± 5 Board, (1)

PD

TA = 25°C

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

PD

Alumina Substrate, (2) TA = 25°C

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

± 55 to +150

°C

DEVICE MARKING

BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;

BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC856ALT1,BLT1

BC857ALT1,BLT1

BC858ALT1,BLT1,

CLT1

Motorola Preferred Devices

3

1

2

CASE 318 ± 08, STYLE 6

SOT± 23 (TO ± 236AB)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		BC856 Series		V(BR)CEO	±65	Ð	Ð	V
(IC = ±10 mA)		BC857 Series			±45	Ð	Ð
		BC858 Series			±30	Ð	Ð
Collector± Emitter Breakdown Voltage		BC856 Series		V(BR)CES	±80	Ð	Ð	V
(IC = ±10 μA, VEB = 0)		BC857 Series			±50	Ð	Ð
		BC858 Series			±30	Ð	Ð
Collector± Base Breakdown Voltage		BC856 Series		V(BR)CBO	±80	Ð	Ð	V
(IC = ±10 mA)		BC857 Series			±50	Ð	Ð
		BC858 Series			±30	Ð	Ð
Emitter± Base Breakdown Voltage		BC856 Series		V(BR)EBO	±5.0	Ð	Ð	V
(IE = ±1.0 mA)		BC857 Series			±5.0	Ð	Ð
		BC858 Series			±5.0	Ð	Ð
Collector Cutoff Current (VCB = ±30 V)				ICBO	Ð	Ð	±15	nA
(VCB = ±30 V, TA = 150°C)					Ð	Ð	±4.0	μA
1. FR±5 = 1.0 x 0.75 x 0.062 in	2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Thermal Clad is a registered trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

	Characteristic	Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
DC Current Gain	BC856A, BC857A, BC585A	hFE	Ð	90	Ð	Ð
(IC = ±10 μA, VCE = ±5.0 V)	BC856A, BC857A, BC858A		Ð	150	Ð
	BC858C		Ð	270	Ð
(IC = ±2.0 mA, VCE = ±5.0 V)	BC856A, BC857A, BC858A		125	180	250
	BC856B, BC857B, BC858B		220	290	475
	BC858C		420	520	800
Collector± Emitter Saturation Voltage		VCE(sat)				V
(IC = ±10 mA, IB = ±0.5 mA)			Ð	Ð	±0.3
(IC = ±100 mA, IB = ±5.0 mA)			Ð	Ð	±0.65
Base ± Emitter Saturation Voltage		VBE(sat)				V
(IC = ±10 mA, IB = ±0.5 mA)			Ð	±0.7	Ð
(IC = ±100 mA, IB = ±5.0 mA)			Ð	±0.9	Ð
Base ± Emitter On Voltage		VBE(on)				V
(IC = ±2.0 mA, VCE = ±5.0 V)			±0.6	Ð	±0.75
(IC = ±10 mA, VCE = ±5.0 V)			Ð	Ð	±0.82
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product		fT	100	Ð	Ð	MHz
(IC = ±10 mA, VCE = ±5.0 Vdc, f = 100 MHz)
Output Capacitance		Cob	Ð	Ð	4.5	pF
(VCB = ±10 V, f = 1.0 MHz)
Noise Figure		NF	Ð	Ð	10	dB
(IC = ±0.2 mA, VCE = ±5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

hFE, NORMALIZED DC CURRENT GAIN

BC856ALT1,BLT1

BC857ALT1,BLT1

BC858ALT1,BLT1,CLT1

BC857/BC858

2.0

±1.0

1.5

VCE = ±10 V

±0.9

TA = 25°C

VBE(sat) @ IC/IB = 10

TA = 25°C

(VOLTS)

±0.8

1.0

±0.6

VBE(on) @ VCE = ±10 V

±0.7

0.7

VOLTAGEV,

±0.5

0.5

±0.4

±0.3

0.3

±0.2

VCE(sat) @ IC/IB = 10

±0.1

0.2

±0.5

±1.0

±2.0

±5.0

±10

±20

±50

±100

±200

0

±0.2

±0.5

±1.0

±2.0

±5.0

±10

±20

±50

±100

±0.2

±0.1

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

Figure 2. ªSaturationº and ªOnº Voltages

(V)	±2.0
					TA = 25°C
VOLTAGE
	±1.6
COLLECTOR±EMITTER	±1.2
	±0.8	IC =		IC = ±50 mA	IC = ±200 mA
		±10 mA
			IC = ±20 mA		IC = ±100 mA
	±0.4
,
CE
V
	0	±0.02	±0.1	±1.0	±10	±20
			IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	10
	7.0				Cib
							TA = 25°C
(pF)
	5.0
CAPACITANCE	3.0					Cob
	2.0
C,
	1.0	±0.6	±1.0	±2.0	±4.0	±6.0	±10	±20	±30	±40
	±0.4
				VR, REVERSE VOLTAGE (VOLTS)

°C)	1.0
	±55°C to +125°C
(mV/
	1.2
COEFFICIENT	1.6
	2.0
, TEMPERATURE	2.4
	2.8
VB
θ
	±0.2	±1.0	±10	±100

IC, COLLECTOR CURRENT (mA)

Figure 4. Base±Emitter Temperature Coefficient

(MHz)	400
PRODUCT	300
	200
± BANDWIDTH	150						VCE = ±10 V
	100						TA = 25°C
	80
	60
,CURRENT±GAIN
	40
	30
	20
T		±1.0	±2.0	±3.0	±5.0	±10	±20	±30	±50
f	±0.5

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. Current±Gain ± Bandwidth Product

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3