MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6107/D
2N6057 thru 2N605 (See 2N6050)
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general±purpose amplifier and switching applications.
• DC Current Gain Specified to 7.0 Amperes
hFE = 30±150 @ IC = 3.0 Adc Ð 2N6111, 2N6288 |
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hFE = 2.3 (Min) @ IC = 7.0 Adc Ð All Devices |
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• Collector±Emitter Sustaining Voltage Ð |
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VCEO(sus) = 30 Vdc (Min) Ð 2N6111, 2N6288 |
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VCEO(sus) = 50 Vdc (Min) Ð 2N6109 |
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VCEO(sus) = 70 Vdc (Min) Ð 2N6107, 2N6292 |
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• High Current Gain Ð Bandwidth Product |
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fT = 4.0 MHz (Min) @ IC = 500 mAdc Ð 2N6288, 90, 92 |
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fT = 10 MHz (Min) @ IC = 500 mAdc Ð 2N6107, 09, 11 |
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• TO±220AB Compact Package |
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*MAXIMUM RATINGS |
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2N6111 |
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2N6107 |
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Rating |
Symbol |
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2N6288 |
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2N6109 |
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2N6292 |
Unit |
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Collector±Emitter Voltage |
VCEO |
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30 |
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50 |
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70 |
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Vdc |
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Collector±Base Voltage |
VCB |
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40 |
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60 |
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80 |
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Vdc |
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Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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7.0 |
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Adc |
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Peak |
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10 |
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Base Current |
IB |
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3.0 |
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Adc |
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Total Power Dissipation @ TC = 25_C |
PD |
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40 |
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Watts |
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Derate above 25_C |
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0.32 |
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W/_C |
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Operating and Storage Junction |
TJ, Tstg |
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± 65 to +150 |
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_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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3.125 |
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_C/W |
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* Indicates JEDEC Registered Data. |
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PNP
2N6107
2N6109*
2N6111
NPN
2N6288
2N6292*
*Motorola Preferred Device
7 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
30 ± 50 ± 70 VOLTS
40 WATTS
CASE 221A±06
TO±220AB
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40 |
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(WATTS) |
30 |
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DISSIPATION |
20 |
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, POWER |
10 |
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D |
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P |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1995
2N6107 |
2N6109 |
2N6111 |
2N6288 |
2N6292 |
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 100 mAdc, IB = 0) |
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2N6111, 2N6288 |
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30 |
Ð |
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2N6109 |
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50 |
Ð |
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2N6107, 2N6292 |
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70 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 20 Vdc, IB = 0) |
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2N6111, 2N6288 |
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1.0 |
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(VCE = 40 Vdc, IB = 0) |
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2N6109 |
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1.0 |
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(VCE = 60 Vdc, IB = 0) |
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2N6107, 2N6292 |
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1.0 |
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Collector Cutoff Current |
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ICEX |
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μAdc |
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(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) |
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2N6111, 2N6288 |
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100 |
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(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) |
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2N6109 |
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100 |
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(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) |
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2N6107, 2N6292 |
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100 |
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(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) |
2N6111, 2N6288 |
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2.0 |
mAdc |
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(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) |
2N6109 |
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2.0 |
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(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) |
2N6107, 2N6292 |
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2.0 |
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Emitter Cutoff Current |
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IEBO |
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1.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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(IC = 2.0 Adc, VCE = 4.0 Vdc) |
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2N6107, 2N6292 |
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30 |
150 |
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(IC = 2.5 Adc, VCE = 4.0 Vdc) |
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2N6109 |
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30 |
150 |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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2N6111, 2N6288 |
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30 |
150 |
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(IC = 7.0 Adc, VCE = 4.0 Vdc) |
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All Devices |
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2.3 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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3.5 |
Vdc |
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(IC = 7.0 Adc, IB = 3.0 Adc) |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
3.0 |
Vdc |
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(IC = 7.0 Adc, VCE = 4.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current Gain Ð Bandwidth Product (2) |
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fT |
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MHz |
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(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) |
2N6288, 92 |
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4.0 |
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2N6107, 09, 11 |
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10 |
Ð |
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Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Cob |
Ð |
250 |
pF |
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Small±Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) |
hfe |
20 |
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* Indicates JEDEC Registered Data.
(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
(2)fT = |hfe| •ftest.
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VCC |
2.0 |
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+ 30 V |
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25 μs |
RC |
1.0 |
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TJ = 25°C |
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0.7 |
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VCC = 30 V |
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+11 V |
SCOPE |
0.5 |
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IC/IB = 10 |
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RB |
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0 |
μs) |
0.3 |
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( |
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TIMEt, |
0.2 |
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tr |
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51 |
D1 |
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± 9.0 V |
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0.1 |
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tr, tf ≤ 10 ns |
± 4 V |
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0.07 |
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td @ VBE(off) ≈ 5.0 V |
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DUTY CYCLE = 1.0% |
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0.05 |
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RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS |
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0.03 |
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D1 MUST BE FAST RECOVERY TYPE, eg: |
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0.02 |
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1N5825 USED ABOVE IB ≈ 100 mA |
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0.07 0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
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MSD6100 USED BELOW IB ≈ 100 mA |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Time Test Circuit |
Figure 3. Turn±On Time |
2 |
Motorola Bipolar Power Transistor Device Data |
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