ON Semiconductor BC239C, BC238C, BC237C, BC237BZL1, BC237BRL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC237/D

Amplifier Transistors

NPN Silicon

						COLLECTOR
						1
				2
			BASE
						3
							EMITTER
MAXIMUM RATINGS
		BC	BC	BC
Rating	Symbol	237	238	239			Unit
Collector± Emitter Voltage	VCEO	45	25	25			Vdc
Collector± Emitter Voltage	VCES	50	30	30			Vdc
Emitter± Base Voltage	VEBO	6.0	5.0	5.0			Vdc
Collector Current Ð Continuous	IC		100				mAdc
Total Device Dissipation @ TA = 25°C	PD		350				mW
Derate above 25°C			2.8				mW/°C
Total Device Dissipation @ TC = 25°C	PD		1.0				Watts
Derate above 25°C			8.0				mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150					°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic	Symbol		Max				Unit
Thermal Resistance, Junction to Ambient	RqJA		357				°C/W
Thermal Resistance, Junction to Case	RqJC		125				°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC237,A,B,C

BC238B,C

BC239,C

1

2 3

CASE 29±04, STYLE 17

TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage	BC237	V(BR)CEO	45	Ð	Ð	V
(IC = 2.0 mA, IB = 0)	BC238		25	Ð	Ð
	BC239		25	Ð	Ð
Emitter± Base Breakdown Voltage	BC237	V(BR)EBO	6.0	Ð	Ð	V
(IE = 100 mA, IC = 0)	BC238		5.0	Ð	Ð
	BC239		5.0	Ð	Ð
Collector Cutoff Current		ICES
(VCE = 30 V, VBE = 0)	BC238		Ð	0.2	15	nA
	BC239		Ð	0.2	15
(VCE = 50 V, VBE = 0)	BC237		Ð	0.2	15
(VCE = 30 V, VBE = 0) TA = 125°C	BC238		Ð	0.2	4.0	μA
	BC239		Ð	0.2	4.0
(VCE = 50 V, VBE = 0) TA = 125°C	BC237		Ð	0.2	4.0

REV 1

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC237,A,B,C BC238B,C BC239,C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

DC Current Gain		hFE				Ð
(IC = 10 μA, VCE = 5.0 V)	BC237A		Ð	90	Ð
	BC237B/238B		Ð	150	Ð
	BC237C/238C/239C		Ð	270	Ð
(IC = 2.0 mA, VCE = 5.0 V)	BC237		120	Ð	800
	BC239		120	Ð	800
	BC237A		120	170	220
	BC237B/238B		200	290	460
	BC237C/238C/239C		380	500	800
(IC = 100 mA, VCE = 5.0 V)	BC237A		Ð	120	Ð
	BC237B/238B		Ð	180	Ð
	BC237C/238C/239C		Ð	300	Ð
Collector± Emitter On Voltage		VCE(sat)				V
(IC = 10 mA, IB = 0.5 mA)	BC237/BC238/BC239		Ð	0.07	0.2
(IC = 100 mA, IB = 5.0 mA)	BC237/BC239		Ð	0.2	0.6
	BC238				0.8
Base ± Emitter Saturation Voltage		VBE(sat)				V
(IC = 10 mA, IB = 0.5 mA)			Ð	0.6	0.83
(IC = 100 mA, IB = 5.0 mA)			Ð	Ð	1.05
Base±Emitter On Voltage		VBE(on)				V
(IC = 100 μA, VCE = 5.0 V)			Ð	0.5	Ð
(IC = 2.0 mA, VCE = 5.0 V)			0.55	0.62	0.7
(IC = 100 mA, VCE = 5.0 V)			Ð	0.83	Ð
DYNAMIC CHARACTERISTICS
Current± Gain Ð Bandwidth Product		fT				MHz
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)	BC237		Ð	100	Ð
	BC238		Ð	120	Ð
	BC239		Ð	140	Ð
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)	BC237		150	200	Ð
	BC238		150	240	Ð
	BC239		150	280	Ð
Collector±Base Capacitance		Cobo	Ð	Ð	4.5	pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Emitter±Base Capacitance		Cibo	Ð	8.0	Ð	pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Noise Figure		NF				dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz)	BC239
			Ð	2.0	4.0
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz, f = 200 Hz)	BC237		Ð	2.0	10
	BC238		Ð	2.0	10
	BC239		Ð	2.0	4.0

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data