ON Semiconductor BC557ZL1, BC557CZL1, BC557C, BC557BZL1, BC558ZL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC556/D

Amplifier	Transistors
PNP Silicon
						COLLECTOR
							1
				2
				BASE
							3
							EMITTER
MAXIMUM RATINGS
			BC	BC		BC
Rating		Symbol	556	557		558			Unit
Collector± Emitter Voltage		VCEO	±65	±45		±30				Vdc
Collector± Base Voltage		VCBO	±80	±50		±30				Vdc
Emitter± Base Voltage		VEBO		±5.0						Vdc
Collector Current Ð Continuous		IC		±100					mAdc
Total Device Dissipation @ TA = 25°C		PD		625						mW
Derate above 25°C				5.0				mW/°C
Total Device Dissipation @ TC = 25°C		PD		1.5					Watt
Derate above 25°C				12				mW/°C
Operating and Storage Junction		TJ, Tstg	± 55 to +150							°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic		Symbol		Max					Unit
Thermal Resistance, Junction to Ambient		RqJA		200					°C/W
Thermal Resistance, Junction to Case		RqJC		83.3					°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC556,B

BC557A,B,C

BC558B

1

2 3

CASE 29±04, STYLE 17

TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		V(BR)CEO				V
(IC = ±2.0 mAdc, IB = 0)	BC556		±65	Ð	Ð
	BC557		±45	Ð	Ð
	BC558		±30	Ð	Ð
Collector± Base Breakdown Voltage		V(BR)CBO				V
(IC = ±100 μAdc)	BC556		±80	Ð	Ð
	BC557		±50	Ð	Ð
	BC558		±30	Ð	Ð
Emitter± Base Breakdown Voltage		V(BR)EBO	±5.0	Ð	Ð	V
(IE = ±100 mAdc, IC = 0)	BC556
	BC557		±5.0	Ð	Ð
	BC558		±5.0	Ð	Ð
Collector±Emitter Leakage Current		ICES
(VCES = ±40 V)	BC556		Ð	±2.0	±100	nA
(VCES = ±20 V)	BC557		Ð	±2.0	±100
	BC558		Ð	±2.0	±100
(VCES = ±20 V, TA = 125°C)	BC556		Ð	Ð	±4.0	μA
	BC557		Ð	Ð	±4.0
	BC558		Ð	Ð	±4.0

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC556,B BC557A,B,C BC558B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

DC Current Gain		hFE				Ð
(IC = ±10 μAdc, VCE = ±5.0 V)	BC557A		Ð	90	Ð
	BC556B/557B/558B		Ð	150	Ð
	BC557C		Ð	270	Ð
(IC = ±2.0 mAdc, VCE = ±5.0 V)	BC556		120	Ð	500
	BC557		120	Ð	800
	BC558		120	Ð	800
	BC557A		120	170	220
	BC556B/557B/558B		180	290	460
	BC557C		420	500	800
(IC = ±100 mAdc, VCE = ±5.0 V)	BC557A		Ð	120	Ð
	BC556B/557B/558B		Ð	180	Ð
	BC557C		Ð	300	Ð
Collector± Emitter Saturation Voltage		VCE(sat)				V
(IC = ±10 mAdc, IB = ±0.5 mAdc)			Ð	±0.075	±0.3
(IC = ±10 mAdc, IB = see Note 1)			Ð	±0.3	±0.6
(IC = ±100 mAdc, IB = ±5.0 mAdc)			Ð	±0.25	±0.65
Base ± Emitter Saturation Voltage		VBE(sat)				V
(IC = ±10 mAdc, IB = ±0.5 mAdc)			Ð	±0.7	Ð
(IC = ±100 mAdc, IB = ±5.0 mAdc)			Ð	±1.0	Ð
Base±Emitter On Voltage		VBE(on)				V
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)			±0.55	±0.62	±0.7
(IC = ±10 mAdc, VCE = ±5.0 Vdc)			Ð	±0.7	±0.82
SMALL±SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product		fT				MHz
(IC = ±10 mA, VCE = ±5.0 V, f = 100 MHz)	BC556		Ð	280	Ð
	BC557		Ð	320	Ð
	BC558		Ð	360	Ð
Output Capacitance		Cob	Ð	3.0	6.0	pF
(VCB = ±10 V, IC = 0, f = 1.0 MHz)
Noise Figure		NF				dB
(IC = ±0.2 mAdc, VCE = ±5.0 V,	BC556		Ð	2.0	10
RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz)	BC557		Ð	2.0	10
	BC558		Ð	2.0	10
Small±Signal Current Gain		hfe				Ð
(IC = ±2.0 mAdc, VCE = ±5.0 V, f = 1.0 kHz)	BC556		125	Ð	500
	BC557/558		125	Ð	900
	BC557A		125	220	260
	BC556B/557B/558B		240	330	500
	BC557C		450	600	900

Note 1: IC = ±10 mAdc on the constant base current characteristics, which yields the point IC = ±11 mAdc, VCE = ±1.0 V.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data