ON Semiconductor BD675, BD675A, BD677, BD677A, BD679 Service Manual

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681

BD681 is a Preferred Device

Plastic Medium-Power

Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.

Features

• High DC Current Gain:

hFE = 750 (Min) @ IC

=1.5 and 2.0 Adc

•Monolithic Construction

•BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682

•BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating		Symbol	Value	Unit
Collector−Emitter Voltage	BD675, A	VCEO	45	Vdc
	BD677, A		60
	BD679, A		80
	BD681		100
Collector−Base Voltage	BD675, A	VCBO	45	Vdc
	BD677, A		60
	BD679, A		80
	BD681		100
Emitter−Base Voltage		VEBO	5.0	Vdc
Collector Current		IC	4.0	Adc
Base Current		IB	1.0	Adc
Total Device Dissipation @ TC = 25°C		PD	40	W
Derate above 25°C			0.32	W/°C
Operating and Storage Junction		TJ, Tstg	– 55 to +150	°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance,	qJC	3.13	°C/W
Junction−to−Case

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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4.0 AMPERES

POWER TRANSISTORS

NPN SILICON

60, 80, 100 VOLTS, 40 WATTS

COLLECTOR 2

BASE

3

EMITTER 1

TO−225AA

CASE 77

STYLE 1

3 2 1

MARKING DIAGRAMS

YWW

YWW

B

BD6xxG

BD6xxAG

BD6xx

= Device Code

x = 75, 77, 79, 81

Y

= Year

WW

= Work Week

G

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

♥ Semiconductor Components Industries, LLC, 2008	1	Publication Order Number:
September, 2008 − Rev. 13		BD675/D

BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min		Max		Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)	BD675, 675A	BVCEO	45		−		Vdc
(IC = 50 mAdc, IB = 0)	BD677, 677A		60		−
	BD679, 679A		80		−
	BD681		100		−
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)		ICEO	−		500		mAdc
Collector Cutoff Current		ICBO					mAdc
(VCB = Rated BVCEO, IE = 0)			−		0.2
(VCB = Rated BVCEO, IE = 0, TC = 100’C)			−		2.0
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)		IEBO	—		2.0		mAdc
ON CHARACTERISTICS
DC Currert Gain, (Note 1)		hFE					−
(IC = 1.5 Adc,VCE = 3.0 Vdc)	BD675, 677, 679, 681		750		−
(IC = 2.0 Adc, VCE = 3.0 Vdc)	BD675A, 677A, 679A		750		−
Collector−Emitter Saturation Voltage, (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)	BD677, 679, 681	VCE(sat)	−		2.5		Vdc
(IC = 2.0 Adc, IB = 40 mAdc)	BD675A, 677A, 679A		−		2.8
Base−Emitter On Voltage, (Note 1)		VBE(on)					Vdc
(IC = 1.5 Adc, VCE = 3.0 Vdc)	BD677, 679, 681		−		2.5
(IC = 2.0 Adc, VCE = 3 0 Vdc)	BD675A, 677A, 679A		−		2.5
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)		hfe	1.0		−		−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

	50													5.0
POWER DISSIPATION (WATTS)	45
	40											COLLECTOR CURRENT (AMP)		2.0
	35													1.0
	30
																	BONDING WIRE LIMIT
	25
														0.5			THERMALLY LIMIT at TC = 25°C
	20																SECONDARY BREAKDOWN LIMIT
	15													0.2					BD675, 675A
	10
																	= 25°C		BD677, 677A
,												,			T
D												C		0.1		C
P	5.0											I							BD679, 679A
	0												0.05							BD681
		30	45	60	75	90	105	120	135	150	165						2.0	5.0	10	20	50	100
	15													1.0
				TC, CASE TEMPERATURE (°C)													VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Power Temperature Derating

Figure 2. DC Safe Operating Area

There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

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