ON Semiconductor BC368, BC369ZL1, BC369, BC368ZL1, BC368-25ZL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC368/D

Amplifier

Transistors

COLLECTOR

COLLECTOR

2

2

3

3

BASE

BASE

NPN

PNP

1

1

EMITTER

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector± Emitter Voltage

VCEO

20

Vdc

Collector± Emitter Voltage

VCES

25

Vdc

Emitter± Base Voltage

VEBO

5.0

Vdc

Collector Current Ð Continuous

IC

1.0

Adc

Total Device Dissipation @ TA = 25°C

PD

625

mW

Derate above 25°C

5.0

mW/°C

Total Device Dissipation @ TC = 25°C

PD

1.5

Watt

Derate above 25°C

12

mW/°C

Operating and Storage Junction

TJ, Tstg

± 55 to +150

°C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

NPN

BC368, -25

PNP

BC369

Voltage and current are negative for PNP transistors

1

2 3

CASE 29±04, STYLE 14

TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		V(BR)CEO	20	Ð	Ð	Vdc
(IC = 10 mA, IB = 0)
Collector± Base Breakdown Voltage		V(BR)CBO	25	Ð	Ð	Vdc
(IC = 100 μA, IE = 0 )
Emitter± Base Breakdown Voltage		V(BR)EBO	5.0	Ð	Ð	Vdc
(IE = 100 μA, IC = 0)
Collector Cutoff Current		ICBO				μAdc
(VCB = 25 V, IE = 0)			Ð	Ð	10
(VCB = 25 V, IE = 0, TJ = 150°C)			Ð	Ð	1.0	mAdc
Emitter Cutoff Current		IEBO	Ð	Ð	10	μAdc
(VEB = 5.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain		hFE				Ð
(VCE = 10 V, IC = 5.0 mA)			50	Ð	Ð
(VCE = 1.0 V, IC = 0.5 A)	BC368, 369		85	Ð	375
	BC368±25		170	Ð	375
(VCE = 1.0 V, IC = 1.0 A)			60	Ð	Ð
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)		fT	65	Ð	Ð	MHz
Collector±Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)		VCE(sat)	Ð	Ð	0.5	V
Base±Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V)		VBE(on)	Ð	Ð	1.0	V

REV 1

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1999

NPN		BC368,	-25	PNP	BC369
	200
GAIN	100
CURRENT	70
	50	VCE = 1.0 V
,
FE
		TJ = 25°C
h
	20				200	500
	10	20	50	100			1000

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

	1.0
(VOLTS)											TJ = 25°C
	0.8
VOLTAGE	0.6			50 mA
,COLLECTOR	0.4			100 mA
											1000 mA
	0.2								500 mA
CE
V		IC = 10 mA
												250 mA
	0
		0.02	0.05		0.2	0.5		2.0	5.0		20	50
	0.01			0.1			1.0			10			100
					IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

	1.0
		TJ = 25°C		VBE(sat) @ IC/IB = 10
(VOLTS)	0.8
							VBE(on) @ VCE = 1.0 V
VOLTAGEV,	0.6
	0.4
	0.2
		VCE(sat) @ IC/IB = 10
	0	2.0	5.0		20	50		200	500
	1.0			10			100			1000
				IC, COLLECTOR CURRENT (mA)
				Figure 3. ªOnº Voltages
(MHz)	300
PRODUCT	200
BANDWIDTHÐ
	100
CURRENT±GAIN,	70
	30			VCE = 10 V
	50			TJ = 25°C
				f = 20 MHz
T	10		20		50		100		200	500	1000
f

IC, COLLECTOR CURRENT (mA)

Figure 5. Current±Gain Ð Bandwidth Product

°C)	±0.8
(mV/	±1.2
COEFFICIENT
	±1.6
TEMPERATURE,
	±2.0		θVB for VBE
	±2.4
VB	±2.8
θ
	1.0	2.0	5.0	10	20	50	100 200	500	1000

IC, COLLECTOR CURRENT (mA)

Figure 4. Temperature Coefficient

	160				TJ = 25°C
(pF)	120
C, CAPACITANCE	80
					Cibo
	40
					Cobo
	0
	Cobo	5.0	10	15	20	25
	Cibo	1.0	2.0	3.0	4.0	5.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data