MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC517/D
Darlington Transistors
NPN Silicon
|
|
|
|
COLLECTOR 1 |
|||||||
|
|
|
BASE |
|
|
|
|
|
|||
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|||||
|
|
|
|
||||||||
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
EMITTER 3 |
||||||
MAXIMUM RATINGS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rating |
Symbol |
Value |
|
|
Unit |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
Collector± Emitter Voltage |
VCES |
30 |
|
|
Vdc |
||||||
Collector± Base Voltage |
VCB |
40 |
|
|
Vdc |
||||||
Emitter± Base Voltage |
VEB |
10 |
|
|
Vdc |
||||||
Collector Current Ð Continuous |
IC |
1.0 |
|
|
Adc |
||||||
Total Power Dissipation @ TA = 25°C |
PD |
625 |
|
|
mW |
||||||
Derate above 25°C |
|
12 |
|
|
mW/°C |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
Total Power Dissipation @ TC = 25°C |
PD |
1.5 |
|
|
Watts |
||||||
Derate above 25°C |
|
12 |
|
|
mW/°C |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
|
|
|
|
°C |
||||
Temperature Range |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Characteristic |
Symbol |
Max |
|
|
Unit |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Resistance, Junction to |
RqJA |
200 |
|
|
°C/W |
||||||
Ambient |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Resistance, Junction to Case |
RqJC |
83.3 |
|
|
°C/W |
||||||
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
BC517
1
2 3
CASE 29±04, STYLE 17 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage |
V(BR)CES |
30 |
Ð |
Ð |
Vdc |
(IC = 2.0 mAdc, VBE = 0) |
|
|
|
|
|
Collector± Base Breakdown Voltage |
V(BR)CBO |
40 |
Ð |
Ð |
Vdc |
(IC = 10 mAdc, IE = 0) |
|
|
|
|
|
Emitter± Base Breakdown Voltage |
V(BR)EBO |
10 |
Ð |
Ð |
Vdc |
(IE = 100 nAdc, IC = 0) |
|
|
|
|
|
Collector Cutoff Current |
ICES |
Ð |
Ð |
500 |
nAdc |
(VCE = 30 Vdc) |
|
|
|
|
|
Collector Cutoff Current |
ICBO |
Ð |
Ð |
100 |
nAdc |
(VCB = 30 Vdc, IE = 0) |
|
|
|
|
|
Emitter Cutoff Current |
IEBO |
Ð |
Ð |
100 |
nAdc |
(VEB = 10 Vdc, IC = 0) |
|
|
|
|
|
Motorola Small±Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
|
|
|
|
Symbol |
Min |
Typ |
Max |
Unit |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
ON CHARACTERISTICS(1) |
|
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain |
|
|
|
|
|
hFE |
30,000 |
Ð |
Ð |
Ð |
||
(IC = 20 mAdc, VCE = 2.0 Vdc) |
|
|
|
|
|
|
|
|
|
|
|
|
Collector± Emitter Saturation Voltage |
|
|
|
|
VCE(sat) |
Ð |
Ð |
1.0 |
Vdc |
|||
(IC = 100 mAdc, IB = 0.1 mAdc) |
|
|
|
|
|
|
|
|
|
|
|
|
Base ± Emitter On Voltage |
|
|
|
|
VBE(on) |
Ð |
Ð |
1.4 |
Vdc |
|||
(IC = 10 mAdc, VCE = 5.0 Vdc) |
|
|
|
|
|
|
|
|
|
|
|
|
SMALL± SIGNAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Current± Gain Ð Bandwidth Product (2) |
|
|
|
|
|
f |
Ð |
200 |
Ð |
MHz |
||
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) |
|
|
|
|
|
T |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
||
1. Pulse Test: Pulse Width v 2.0%. |
|
|
|
|
|
|
|
|
|
|
|
|
2. fT = |hfe| • ftest |
|
|
|
|
|
|
|
|
|
|
|
|
|
RS |
e |
|
in |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
||||||
|
|
|
n |
IDEAL |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
TRANSISTOR |
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Figure 1. Transistor Noise Model
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
Loading...