MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC337/D
Amplifier Transistors
NPN Silicon
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COLLECTOR |
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2 |
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BASE |
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3 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
BC337 |
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BC338 |
Unit |
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Collector± Emitter Voltage |
VCEO |
45 |
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25 |
Vdc |
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Collector± Base Voltage |
VCBO |
50 |
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30 |
Vdc |
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Emitter± Base Voltage |
VEBO |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
800 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
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1.5 |
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Watt |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
BC337,-16,-25,-40 BC338,-16,-25,-40
1
2 3
CASE 29±04, STYLE 17
TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage |
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V(BR)CEO |
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Vdc |
(IC = 10 mA, IB = 0) |
BC337 |
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45 |
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Ð |
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BC338 |
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25 |
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Ð |
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Collector± Emitter Breakdown Voltage |
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V(BR)CES |
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Vdc |
(IC = 100 μA, IE = 0) |
BC337 |
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50 |
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Ð |
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BC338 |
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30 |
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Ð |
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Emitter± Base Breakdown Voltage |
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V(BR)EBO |
5.0 |
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Ð |
Vdc |
(IE = 10 mA, IC = 0) |
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Collector Cutoff Current |
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ICBO |
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nAdc |
(VCB = 30 V, IE = 0) |
BC337 |
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Ð |
100 |
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(VCB = 20 V, IE = 0) |
BC338 |
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Ð |
100 |
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Collector Cutoff Current |
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ICES |
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nAdc |
(VCE = 45 V, VBE = 0) |
BC337 |
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Ð |
100 |
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(VCE = 25 V, VBE = 0) |
BC338 |
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Ð |
Ð |
100 |
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Emitter Cutoff Current |
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IEBO |
Ð |
Ð |
100 |
nAdc |
(VEB = 4.0 V, IC = 0) |
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Motorola Small±Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
BC337,-16,-25,-40 BC338,-16,-25,-40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
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hFE |
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Ð |
(IC = 100 mA, VCE = 1.0 V) |
BC337/BC338 |
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100 |
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630 |
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BC337±16/BC338±16 |
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100 |
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250 |
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BC337±25/BC338±25 |
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160 |
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400 |
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BC337±40/BC338±40 |
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250 |
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630 |
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(IC = 300 mA, VCE = 1.0 V) |
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60 |
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Ð |
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Base±Emitter On Voltage |
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VBE(on) |
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1.2 |
Vdc |
(IC = 300 mA, VCE = 1.0 V) |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
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0.7 |
Vdc |
(IC = 500 mA, IB = 50 mA) |
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SMALL±SIGNAL CHARACTERISTICS |
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Output Capacitance |
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Cob |
Ð |
15 |
Ð |
pF |
(VCB = 10 V, IE = 0, f = 1.0 MHz) |
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Current± Gain Ð Bandwidth Product |
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fT |
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210 |
Ð |
MHz |
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) |
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NORMALIZED EFFECTIVE TRANSIENT |
THERMAL RESISTANCE |
r(t), |
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1.0 |
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0.7 |
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D = 0.5 |
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0.5 |
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0.3 |
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0.2 |
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0.2 |
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0.1 |
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θJC(t) = (t) θJC |
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0.1 |
0.05 |
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P(pk) |
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θJC = 100°C/W MAX |
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0.07 |
0.02 |
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θ |
(t) = r(t) θ |
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0.05 |
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SINGLE PULSE |
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JA |
JA |
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t |
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θJA = 375°C/W MAX |
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0.01 |
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1 |
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D CURVES APPLY FOR POWER |
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0.03 |
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SINGLE PULSE |
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t2 |
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PULSE TRAIN SHOWN |
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0.02 |
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DUTY CYCLE, D = t1/t2 |
READ TIME AT t1 |
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0.01 |
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TJ(pk) ± TC = P(pk) θJC(t) |
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0.001 |
0.002 |
0.005 |
0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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t, TIME (SECONDS) |
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Figure 1. Thermal Response
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1000 |
1.0 s |
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1.0 ms |
TJ = 135°C |
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(mA) |
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100 μs |
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CURRENT |
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dc |
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TC = 25°C |
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100 |
dc |
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COLLECTOR |
TA = 25°C |
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CURRENT LIMIT |
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, |
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C |
THERMAL LIMIT |
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I |
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SECOND BREAKDOWN LIMIT |
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10 |
(APPLIES BELOW RATED VCEO) |
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1.0 |
3.0 |
10 |
30 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE |
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1000 |
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VCE = 1 V |
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GAIN |
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TJ = 25°C |
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, DC CURRENT |
100 |
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FE |
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h |
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10 |
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0.1 |
1.0 |
10 |
100 |
1000 |
IC, COLLECTOR CURRENT (AMP)
Figure 2. Active Region Ð Safe Operating Area |
Figure 3. DC Current Gain |
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |