MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCP69T1/D
PNP Silicon |
BCP69T1 |
Epitaxial Transistor |
Motorola Preferred Device |
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This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.
•High Current: IC = ±1.0 Amp
•The SOT-223 Package can be soldered using wave or reflow.
•SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
•Available in 12 mm Tape and Reel
COLLECTOR 2,4
Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel.
• NPN Complement is BCP68 |
BASE |
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1 |
EMITTER 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
Rating |
Symbol |
Value |
Unit |
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Collector-Emitter Voltage |
VCEO |
± 25 |
Vdc |
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Collector-Base Voltage |
VCBO |
± 20 |
Vdc |
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Emitter-Base Voltage |
VEBO |
± 5.0 |
Vdc |
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Collector Current |
IC |
±1.0 |
Adc |
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Total Power Dissipation @ T = 25°C(1) |
P |
D |
1.5 |
Watts |
A |
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mW/°C |
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Derate above 25°C |
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12 |
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Operating and Storage Temperature Range |
TJ, Tstg |
± 65 to 150 |
°C |
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DEVICE MARKING |
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CE |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance Ð Junction-to-Ambient (surface mounted) |
RqJA |
83.3 |
°C/W |
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Lead Temperature for Soldering, 0.0625″ from case |
TL |
260 |
°C |
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Time in Solder Bath |
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10 |
Sec |
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1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, IncSmall±Signal. 1996 Transistors, FETs and Diodes Device Data
BCP69T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = ±100 μAdc, IE = 0) |
V(BR)CES |
± 25 |
Ð |
Ð |
Vdc |
Collector-Emitter Breakdown Voltage (IC = ±1.0 mAdc, IB = 0) |
V(BR)CEO |
± 20 |
Ð |
Ð |
Vdc |
Emitter-Base Breakdown Voltage (IE = ±10 μAdc, IC = 0) |
V(BR)EBO |
± 5.0 |
Ð |
Ð |
Vdc |
Collector-Base Cutoff Current (VCB = ± 25 Vdc, IE = 0) |
ICBO |
Ð |
Ð |
±10 |
μAdc |
Emitter-Base Cutoff Current (VEB = ± 5.0 Vdc, IC = 0) |
IEBO |
Ð |
Ð |
±10 |
μAdc |
ON CHARACTERISTICS |
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DC Current Gain |
hFE |
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Ð |
(IC = ± 5.0 mAdc, VCE = ±10 Vdc) |
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50 |
Ð |
Ð |
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(IC = ± 500 mAdc, VCE = ±1.0 Vdc) |
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85 |
Ð |
375 |
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(IC = ±1.0 Adc, VCE = ±1.0 Vdc) |
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60 |
Ð |
Ð |
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Collector-Emitter Saturation Voltage (IC = ±1.0 Adc, IB = ±100 mAdc) |
VCE(sat) |
Ð |
Ð |
± 0.5 |
Vdc |
Base-Emitter On Voltage (IC = ±1.0 Adc, VCE = ±1.0 Vdc) |
VBE(on) |
Ð |
Ð |
±1.0 |
Vdc |
DYNAMIC CHARACTERISTICS |
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Current-Gain Ð Bandwidth Product |
fT |
Ð |
60 |
Ð |
MHz |
(IC = ±10 mAdc, VCE = ± 5.0 Vdc) |
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TYPICAL ELECTRICAL CHARACTERISTICS
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200 |
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(MHz) |
CURRENT, GAIN |
50 |
VCE = ±1.0 V |
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BANDWIDTHPRODUCT |
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100 |
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70 |
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FE |
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TJ = 25°C |
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GAIN |
h |
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20 |
±100 |
±1000 |
, CURRENT |
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±10 |
f |
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T |
300
200
100
70
50
30±10
VCE = ±10 V TJ = 25°C
f = 30 MHz
±100 |
±1000 |
IC, COLLECTOR CURRENT (mA) |
IC, COLLECTOR CURRENT (mA) |
Figure 1. DC Current Gain |
Figure 2. Current Gain Bandwidth Product |
V, VOLTAGE (VOLTS)
±1.0 |
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160 |
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TJ = 25°C |
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TJ = 25°C |
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± 0.8 |
V(BE)sat @ IC/IB = 10 |
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120 |
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(pF) |
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Cib |
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± 0.6 |
V(BE)on @ VCE = ±1.0 V |
CAPACITANCE |
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80 |
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± 0.4 |
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C, |
40 |
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± 0.2 |
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V(CE)sat @ IC/IB = 10 |
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Cob |
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0 |
±10 |
±100 |
±1000 |
0 |
± 5.0 |
±1.0 |
±1.5 |
± 2.0 |
± 2.5 |
±1.0 |
Cob |
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I , COLLECTOR CURRENT (mA) |
Cib |
±1.0 |
± 2.0 |
± 3.0 |
± 4.0 |
± 5.0 |
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C |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 3. Saturation and ªONº Voltages |
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Figure 4. Capacitances
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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