ON Semiconductor 2N5551ZL1, 2N5551RLRP, 2N5551RLRM, 2N5551RLRA, 2N5551RL1 Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5550/D
Amplifier |
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2N5550 |
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NPN Silicon |
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2N5551* |
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*Motorola Preferred Device |
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COLLECTOR |
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BASE |
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1 |
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EMITTER |
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1 |
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MAXIMUM RATINGS |
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2 3 |
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Rating |
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Symbol |
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2N5550 |
2N5551 |
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Unit |
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CASE 29±04, STYLE 1 |
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Collector± Emitter Voltage |
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VCEO |
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140 |
160 |
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Vdc |
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TO±92 (TO±226AA) |
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Collector± Base Voltage |
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VCBO |
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160 |
180 |
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Vdc |
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Emitter± Base Voltage |
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VEBO |
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6.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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600 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
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625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
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1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
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± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
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200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
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83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
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Max |
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Unit |
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OFF CHARACTERISTICS |
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Collector± Emitter Breakdown Voltage(1) |
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V(BR)CEO |
140 |
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Ð |
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Vdc |
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(IC = 1.0 mAdc, IB = 0) |
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2N5550 |
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2N5551 |
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160 |
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Ð |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
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Vdc |
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(IC = 100 μAdc, IE = 0 ) |
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2N5550 |
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160 |
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Ð |
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2N5551 |
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180 |
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Ð |
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Emitter± Base Breakdown Voltage |
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V(BR)EBO |
6.0 |
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Ð |
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Vdc |
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(IE = 10 μAdc, IC = 0) |
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Collector Cutoff Current |
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ICBO |
Ð |
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100 |
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nAdc |
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(VCB = 100 Vdc, IE = 0) |
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2N5550 |
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(VCB = 120 Vdc, IE = 0) |
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2N5551 |
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Ð |
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50 |
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(VCB = 100 Vdc, IE = 0, TA = 100°C) |
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2N5550 |
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Ð |
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100 |
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μAdc |
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(VCB = 120 Vdc, IE = 0, TA = 100°C) |
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2N5551 |
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Ð |
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50 |
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Emitter Cutoff Current |
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IEBO |
Ð |
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50 |
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nAdc |
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(VEB = 4.0 Vdc, IC = 0) |
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1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. |
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Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
2N5550 |
2N5551 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
60 |
Ð |
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(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
2N5550 |
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2N5551 |
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80 |
Ð |
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(IC = 10 mAdc, VCE = 5.0 Vdc) |
2N5550 |
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60 |
250 |
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2N5551 |
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80 |
250 |
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(IC = 50 mAdc, VCE = 5.0 Vdc) |
2N5550 |
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20 |
Ð |
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2N5551 |
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30 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
Ð |
0.15 |
Vdc |
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(IC = 10 mAdc, IB = 1.0 mAdc) |
Both Types |
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(IC = 50 mAdc, IB = 5.0 mAdc) |
2N5550 |
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Ð |
0.25 |
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2N5551 |
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Ð |
0.20 |
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Base ± Emitter Saturation Voltage |
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VBE(sat) |
Ð |
1.0 |
Vdc |
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(IC = 10 mAdc, IB = 1.0 mAdc) |
Both Types |
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(IC = 50 mAdc, IB = 5.0 mAdc) |
2N5550 |
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Ð |
1.2 |
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2N5551 |
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Ð |
1.0 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
100 |
300 |
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(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) |
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Output Capacitance |
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Cobo |
Ð |
6.0 |
pF |
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(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Input Capacitance |
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Cibo |
Ð |
30 |
pF |
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(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
2N5550 |
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2N5551 |
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Ð |
20 |
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Small±Signal Current Gain |
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hfe |
50 |
200 |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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Noise Figure |
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NF |
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dB |
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(IC = 250 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, |
2N5550 |
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Ð |
10 |
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f = 1.0 kHz) |
2N5551 |
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Ð |
8.0 |
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1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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