ON Semiconductor BC213, BC212BZL1, BC212BRL1, BC212B, BC212 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC212/D

Amplifier	Transistors
PNP Silicon
						COLLECTOR
							3
				2
				BASE
							1
							EMITTER
MAXIMUM RATINGS
			BC	BC		BC
Rating		Symbol	212	213	214			Unit
Collector± Emitter Voltage		VCEO	±50	±30	±30			Vdc
Collector± Base Voltage		VCBO	±60	±45	±45			Vdc
Emitter± Base Voltage		VEBO		±5.0				Vdc
Collector Current Ð Continuous		IC		±100			mAdc
Total Device Dissipation @ TA = 25°C		PD		350				mW
Derate above 25°C				2.8			mW/°C
Total Device Dissipation @ TC = 25°C		PD		1.0			Watts
Derate above 25°C				8.0			mW/°C
Operating and Storage Junction		TJ, Tstg	± 55 to +150					°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic		Symbol		Max				Unit
Thermal Resistance, Junction to Ambient		RqJA		357			°C/W
Thermal Resistance, Junction to Case		RqJC		125			°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC212,B

BC213

BC214

1

2 3

CASE 29±04, STYLE 17 TO±92 (TO±226AA)

Characteristic		Symbol	Min	Typ	Max	Unit
Collector± Emitter Breakdown Voltage	BC212	V(BR)CEO	±50	Ð	Ð	Vdc
(IC = ±2.0 mAdc, IB = 0)	BC213		±30	Ð	Ð
	BC214		±30	Ð	Ð
Collector± Base Breakdown Voltage	BC212	V(BR)CBO	±60	Ð	Ð	Vdc
(IC = ±10 mA, IE = 0)	BC213		±45	Ð	Ð
	BC214		±45	Ð	Ð
Emitter± Base Breakdown Voltage	BC212	V(BR)EBO	±5	Ð	Ð	Vdc
(IE = ±10 mAdc, IC = 0)	BC213		±5	Ð	Ð
	BC214		±5	Ð	Ð
Collector±Emitter Leakage Current	BC212	ICBO	Ð	Ð	±15	nAdc
(VCB = ±30 V)	BC213		Ð	Ð	±15
	BC214		Ð	Ð	±15
Emitter±Base Leakage Current	BC212	IEBO	Ð	Ð	±15	nAdc
(VEB = ±4.0 V, IC = 0)	BC213		Ð	Ð	±15
	BC214		Ð	Ð	±15

Motorola, Inc. 1996

BC212,B	BC213	BC214
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
		Characteristic		Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
DC Current Gain				hFE				Ð
(IC = ±10 μAdc, VCE = ±5.0 Vdc)			BC212		40	Ð	Ð
			BC213		40	Ð	Ð
			BC214		100	Ð	Ð
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)			BC212		60	Ð	Ð
			BC213		80	Ð	Ð
			BC214		140	Ð	600
(IC = ±100 mAdc, VCE = ±5.0 Vdc)(1)			BC212, BC214		Ð	120	Ð
			BC213		Ð	140	Ð
Collector± Emitter Saturation Voltage				VCE(sat)				Vdc
(IC = ±10 mAdc, IB = ±0.5 mAdc)					Ð	±0.10	Ð
(IC = ±100 mAdc, IB = ±5.0 mAdc)(1)					Ð	±0.25	±0.6
Base ± Emitter Saturation Voltage				VBE(sat)	Ð	±1.0	±1.4	Vdc
(IC = ±100 mAdc, IB = ±5.0 mAdc)
Base±Emitter On Voltage				VBE(on)	±0.6	±0.62	±0.72	Vdc
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current± Gain Ð Bandwidth Product				fT				MHz
(IC = ±10 mAdc, VCE = ±5.0 Vdc, f = 100 MHz)			BC212		Ð	280	Ð
			BC214		Ð	320	Ð
			BC213		Ð	360	Ð
Common±Base Output Capacitance				Cob	Ð	Ð	6.0	pF
(VCB = ±10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure				NF				dB
(IC = ±0.2 mAdc, VCE = ±5.0 Vdc,
RS = 2.0 kΩ , f = 1.0 kHz)			BC214		Ð	Ð	2
(IC = ±0.2 mAdc, VCE = ±5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)			BC212, BC213		Ð	Ð	10
Small±Signal Current Gain				hfe				Ð
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc, f = 1.0 kHz)			BC212		60	Ð	Ð
			BC213		80	Ð	Ð
			BC214		140	Ð	Ð
			BC212B		200	Ð	400

1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data