ON Semiconductor 2N3904, 2N3904ZL1, 2N3904RLRP, 2N3904RLRM, 2N3904RLRE Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3903/D

General Purpose Transistors

NPN Silicon

		COLLECTOR
			3
		2
		BASE
			1
			EMITTER
MAXIMUM RATINGS
Rating	Symbol	Value		Unit
Collector± Emitter Voltage	VCEO	40		Vdc
Collector± Base Voltage	VCBO	60		Vdc
Emitter± Base Voltage	VEBO	6.0		Vdc
Collector Current Ð Continuous	IC	200		mAdc
Total Device Dissipation @ TA = 25°C	PD	625		mW
Derate above 25°C		5.0		mW/°C
Total Device Dissipation @ TC = 25°C	PD	1.5		Watts
Derate above 25°C		12		mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150		°C
Temperature Range
THERMAL CHARACTERISTICS(1)
Characteristic	Symbol	Max		Unit
Thermal Resistance, Junction to Ambient	RqJA	200		°C/W
Thermal Resistance, Junction to Case	RqJC	83.3		°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N3903

2N3904*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage (2)	V	40	Ð	Vdc
(IC = 1.0 mAdc, IB = 0)	(BR)CEO
Collector± Base Breakdown Voltage	V(BR)CBO	60	Ð	Vdc
(IC = 10 mAdc, IE = 0)
Emitter± Base Breakdown Voltage	V(BR)EBO	6.0	Ð	Vdc
(IE = 10 mAdc, IC = 0)
Base Cutoff Current	IBL	Ð	50	nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current	ICEX	Ð	50	nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)

1.Indicates Data in addition to JEDEC Requirements.

2.Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1996

2N3903 2N3904

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Max	Unit

ON CHARACTERISTICS

DC Current Gain(1)			h			Ð
(IC = 0.1 mAdc, VCE = 1.0 Vdc)		2N3903	FE	20	Ð
		2N3904		40	Ð
(IC = 1.0 mAdc, VCE = 1.0 Vdc)		2N3903		35	Ð
		2N3904		70	Ð
(IC = 10 mAdc, VCE = 1.0 Vdc)		2N3903		50	150
		2N3904		100	300
(IC = 50 mAdc, VCE = 1.0 Vdc)		2N3903		30	Ð
		2N3904		60	Ð
(IC = 100 mAdc, VCE = 1.0 Vdc)		2N3903		15	Ð
		2N3904		30	Ð
Collector± Emitter Saturation Voltage(1)			VCE(sat)	Ð	0.2	Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc				Ð	0.3
Base ± Emitter Saturation Voltage(1)			V			Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)			BE(sat)	0.65	0.85
(IC = 50 mAdc, IB = 5.0 mAdc)				Ð	0.95
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product			fT			MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)		2N3903		250	Ð
		2N3904		300	Ð
Output Capacitance			Cobo	Ð	4.0	pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance			Cibo	Ð	8.0	pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance			hie			k Ω
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)		2N3903		1.0	8.0
		2N3904		1.0	10
Voltage Feedback Ratio			h			X 10± 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)		2N3903	re	0.1	5.0
		2N3904		0.5	8.0
Small±Signal Current Gain			hfe			Ð
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)		2N3903		50	200
		2N3904		100	400
Output Admittance			hoe	1.0	40	mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure			NF			dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)		2N3903		Ð	6.0
		2N3904		Ð	5.0
SWITCHING CHARACTERISTICS
Delay Time	(VCC = 3.0 Vdc, VBE = 0.5 Vdc,		td	Ð	35	ns
Rise Time	IC = 10 mAdc, IB1 = 1.0 mAdc)		tr	Ð	35	ns
Storage Time	(VCC = 3.0 Vdc, IC = 10 mAdc,	2N3903	ts	Ð	175	ns
	IB1 = IB2 = 1.0 mAdc)	2N3904		Ð	200
Fall Time			tf	Ð	50	ns
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

						2N3903 2N3904
	+3 V		10 < t1 < 500 ms	t1		+3 V
DUTY CYCLE = 2%					+10.9 V
300 ns	+10.9 V		DUTY CYCLE = 2%
		275				275
	10 k		0		10 k
± 0.5 V
		CS < 4 pF*				CS < 4 pF*
	< 1 ns				1N916
			± 9.1 V′		< 1 ns
	* Total shunt capacitance of test jig and connectors
	Figure 1. Delay and Rise Time				Figure 2. Storage and Fall Time
	Equivalent Test Circuit				Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

	10
	7.0
(pF)	5.0
CAPACITANCE	3.0						Cibo
	2.0						Cobo
	1.0	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0 7.0 10	20	30	40
	0.1

REVERSE BIAS VOLTAGE (VOLTS)

Figure 3. Capacitance

TJ = 25°C
TJ = 125°C
	5000
	3000	VCC = 40 V
		IC/IB = 10
	2000
(pC)	1000
	700
Q, CHARGE
	500
	300					QT
	200
	100								QA
	70
	50	2.0	3.0	5.0 7.0	10	20	30	50	70	100	200
	1.0

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

Motorola Small±Signal Transistors, FETs and Diodes Device Data

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