ON Semiconductor BC308C, BC307CZL1, BC307C, BC307BZL1, BC307BRL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC307/D

Amplifier Transistors

PNP Silicon

COLLECTOR 1

2 BASE

3 EMITTER

MAXIMUM RATINGS

Rating	Symbol	BC307, B, C		BC308C	Unit
Collector± Emitter Voltage	VCEO	±45		±25	Vdc
Collector± Base Voltage	VCBO	±50		±30	Vdc
Emitter± Base Voltage	VEBO	±5.0			Vdc
Collector Current Ð Continuous	IC	±100			mAdc
Total Device Dissipation @ TA = 25°C	PD	350			mW
Derate above 25°C		2.8			mW/°C
Total Device Dissipation @ TC = 25°C	PD	1.0			Watts
Derate above 25°C		8.0			mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150			°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Ambient	RqJA	357	°C/W
Thermal Resistance, Junction to Case	RqJC	125	°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC307

BC307B

BC307C

BC308C

1

2 3

CASE 29±04, STYLE 17 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage	BC307,B,C	V(BR)CEO	±45	Ð	Ð	Vdc
(IC = ±2.0 mAdc, IB = 0)	BC308C		±25	Ð	Ð
Emitter± Base Breakdown Voltage	BC307,B,C	V(BR)EBO	±5.0	Ð	Ð	Vdc
(IE = ±100 mAdc, IC = 0)	BC308C		±5.0	Ð	Ð
Collector±Emitter Leakage Current		ICES
(VCES = ±50 V, VBE = 0)	BC307,B,C		Ð	±0.2	±15	nAdc
(VCES = ±30 V, VBE = 0)	BC308C		Ð	±0.2	±15
(VCES = ±50 V, VBE = 0) TA = 125°C	BC307,B,C		Ð	±0.2	±4.0	μA
(VCES = ±30 V, VBE = 0) TA = 125°C	BC308C		Ð	±0.2	±4.0

REV 1

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

BC307	BC307B	BC307C	BC308C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
		Characteristic			Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
DC Current Gain					hFE				Ð
(IC = ±10 μAdc, VCE = ±5.0 Vdc)				BC307B		Ð	150	Ð
				BC307C/308C		Ð	270	Ð
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)				BC307		120	Ð	800
				BC307B/308B		200	290	460
				BC307C/308C		420	500	800
(IC = ±100 mAdc, VCE = ±5.0 Vdc)				BC307B		Ð	180	Ð
				BC307C/308C		Ð	300	Ð
Collector± Emitter Saturation Voltage					VCE(sat)				Vdc
(IC = ±10 mAdc, IB = ±0.5 mAdc)						Ð	±0.10	±0.3
(IC = ±10 mAdc, IB = see Note 1)						Ð	±0.30	±0.6
(IC = ±100 mAdc, IB = ±5.0 mAdc)						Ð	±0.25	Ð
Base ± Emitter Saturation Voltage					VBE(sat)				Vdc
(IC = ±10 mAdc, IB = ±0.5 mAdc)						Ð	±0.7	Ð
(IC = ±100 mAdc, IB = ±5.0 mAdc)						Ð	±1.0	Ð
Base±Emitter On Voltage					VBE(on)	±0.55	±0.62	±0.7	Vdc
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current± Gain Ð Bandwidth Product					fT				MHz
(IC = ±10 mAdc, VCE = ±5.0 Vdc, f = 100 MHz)				BC307,B,C		Ð	280	Ð
				BC308C		Ð	320	Ð
Common Base Capacitance					Ccbo	Ð	Ð	6.0	pF
(VCB = ±10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure					NF				dB
(IC = ±0.2 mAdc, VCE = ±5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz)				BC307,B,C		Ð	2.0	10
(IC = ±0.2 mAdc, VCE = ±5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, f = 200 Hz)				BC308C		Ð	2.0	10

1. IC = ±10 mAdc on the constant base current characteristic, which yields the point IC = ±11 mAdc, VCE = ±1.0 V.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data