ON Semiconductor 2N6349, 2N6344 Datasheet

2N6344, 2N6349

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full±wave silicon gate controlled solid±state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering.

•Blocking Voltage to 800 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in all Four Quadrants

•For 400 Hz Operation, Consult Factory

•Device Marking: Logo, Device Type, e.g., 2N6344, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating		Symbol	Value	Unit
* Peak Repetitive Off±State Voltage(1)		VDRM,		Volts
(TJ = ±40 to +110°C, Sine Wave 50 to		VRRM	600
60 Hz, Gate Open)	2N6344
	2N6349		800
*On±State RMS Current		IT(RMS)		Amps
(TC = +80°C)			8.0
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90°C)			4.0
*Peak Non±Repetitive Surge Current		ITSM	100	Amps
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms)		I2t	40	A2s
*Peak Gate Power		PGM	20	Watts
(TC = +80°C, Pulse Width = 2 μs)
*Average Gate Power		PG(AV)	0.5	Watt
(TC = +80°C, t = 8.3 ms)
*Peak Gate Current		IGM	2.0	Amps
(TC = +80°C, Pulse Width = 2.0 μs)
*Peak Gate Voltage		VGM	10	Volts
(TC = +80°C, Pulse Width = 2.0 μs)
*Operating Junction Temperature Range		TJ	± 40 to	°C
			+125
*Storage Temperature Range		Tstg	± 40 to	°C
			+150

(1)VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

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TRIACS

8 AMPERES RMS

600 thru 800 VOLTS

MT2 MT1

G

4

1

2

	3
	TO±220AB
	CASE 221A
	STYLE 4
	PIN ASSIGNMENT
1	Main Terminal 1
2	Main Terminal 2
3	Gate
4	Main Terminal 2

ORDERING INFORMATION

Device	Package	Shipping
2N6344	TO220AB	500/Box
2N6349	TO220AB	500/Box

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 1999	1	Publication Order Number:
March, 2000 ± Rev. 1		2N6344/D

2N6344, 2N6349

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
*Thermal Resistance, Junction to Case	RqJC	2.2	°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds	TL	260	°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic		Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
* Peak Repetitive Blocking Current	TJ = 25°C	IDRM,				mA
(VD = Rated VDRM, VRRM; Gate Open)		IRRM	Ð	Ð	10
	TJ = 100°C		Ð	Ð	2.0	mA
ON CHARACTERISTICS
* Peak On±State Voltage		VTM	Ð	1.3	1.55	Volts
(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
Gate Trigger Current (Continuous dc)		IGT				mA
(VD = 12 Vdc, RL = 100 Ohms)			Ð	12	50
MT2(+), G(+)
MT2(+), G(±)			Ð	12	75
MT2(±), G(±)			Ð	20	50
MT2(±), G(+)			Ð	35	75
*MT2(+), G(+); MT2(±), G(±) TC = ±40°C			Ð	Ð	100
*MT2(+), G(±); MT2(±), G(+) TC = ±40°C			Ð	Ð	125
Gate Trigger Voltage (Continuous dc)		VGT				Volts
(VD = 12 Vdc, RL = 100 Ohms)			Ð	0.9	2.0
MT2(+), G(+)
MT2(+), G(±)			Ð	0.9	2.5
MT2(±), G(±)			Ð	1.1	2.0
MT2(±), G(+)			Ð	1.4	2.5
*MT2(+), G(+); MT2(±), G(±) TC = ±40°C			Ð	Ð	2.5
*MT2(+), G(±); MT2(±), G(+) TC = ±40°C			Ð	Ð	3.0
Gate Non±Trigger Voltage (Continuous dc)		VGD				Volts
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C)			0.2	Ð	Ð
*MT2(+), G(+); MT2(±), G(±); MT2(+), G(±); MT2(±), G(±)
* Holding Current	TC = 25°C	IH				mA
(VD = 12 Vdc, Gate Open)			Ð	6.0	40
(Initiating Current = "200 mA)	*TC = ±40°C		Ð	Ð	75
* Turn-On Time		tgt	Ð	1.5	2.0	ms
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1 ms, Pulse Width = 2 ms)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage		dv/dt(c)	Ð	5.0	Ð	V/ms
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80°C)
*Indicates JEDEC Registered Data.

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2N6344, 2N6349

Voltage Current Characteristic of Triacs

(Bidirectional Device)

	Symbol	Parameter
	VDRM	Peak Repetitive Forward Off State Voltage
	IDRM	Peak Forward Blocking Current
	VRRM	Peak Repetitive Reverse Off State Voltage
	IRRM	Peak Reverse Blocking Current
	VTM	Maximum On State Voltage
	IH	Holding Current

+ Current

		Quadrant 1
	VTM	MainTerminal 2 +
	on state
IRRM at VRRM	IH
	off state	+ Voltage
	IH	IDRM at VDRM
Quadrant 3	VTM
MainTerminal 2 ±

Quadrant Definitions for a Triac

MT2 POSITIVE (Positive Half Cycle)

+

	(+) MT2	(+) MT2
Quadrant II	(±) IGT	(+) IGT	Quadrant I
	GATE	GATE
	MT1	MT1
	REF	REF
IGT ±			+ IGT
	(±) MT2	(±) MT2
Quadrant III	(±) IGT	(+) IGT	Quadrant IV
	GATE	GATE
	MT1	MT1
	REF	REF

±

MT2 NEGATIVE (Negative Half Cycle)

All polarities are referenced to MT1.

With in±phase signals (using standard AC lines) quadrants I and III are used.

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