ON Semiconductor BC489BRL1, BC489B, BC489AZL1, BC489A, BC489 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC489/D

High Current Transistors

NPN Silicon

				COLLECTOR
				1
		2
		BASE
				3
MAXIMUM RATINGS					EMITTER
Rating	Symbol	Value			Unit
Collector± Emitter Voltage	VCEO	80			Vdc
Collector± Base Voltage	VCBO	80			Vdc
Emitter± Base Voltage	VEBO	5.0			Vdc
Collector Current Ð Continuous	IC	0.5			Adc
Total Device Dissipation @ TA = 25°C	PD	625			mW
Derate above 25°C		5.0			mW/°C
Total Device Dissipation @ TC = 25°C	PD	1.5			Watt
Derate above 25°C		12			mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150			°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic	Symbol	Max			Unit
Thermal Resistance, Junction to Ambient	RqJA	200			°C/W
Thermal Resistance, Junction to Case	RqJC	83.3			°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC489,A,B

1

2 3

CASE 29±04, STYLE 17 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)		V(BR)CEO	80	Ð	Ð	Vdc
(IC = 10 mAdc, IB = 0)
Collector± Base Breakdown Voltage		V(BR)CBO	80	Ð	Ð	Vdc
(IC = 100 mAdc, IE = 0)
Emitter± Base Breakdown Voltage		V(BR)EBO	5.0	Ð	Ð	Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current		ICBO	Ð	Ð	100	nAdc
(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
DC Current Gain		hFE				Ð
(IC = 10 mAdc, VCE = 2.0 Vdc)			40	Ð	Ð
(IC = 100 mAdc, VCE = 2.0 Vdc)	BC489		60	Ð	400
	BC489A		100	160	250
	BC489B		160	260	400
(IC = 1.0 Adc, VCE = 5.0 Vdc)*			15	Ð	Ð

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.

Motorola, Inc. 1996

BC489,A,B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS* (Continued)

Collector± Emitter Saturation Voltage	VCE(sat)				Vdc
(IC = 500 mAdc, IB = 50 mAdc)		Ð	0.2	0.5
(IC = 1.0 Adc, IB = 100 mAdc)		Ð	0.3	Ð
Base ± Emitter Saturation Voltage	VBE(sat)				Vdc
(IC = 500 mAdc, IB = 50 mAdc)		Ð	0.85	1.2
(IC = 1.0 Adc, IB = 100 mAdc)(1)		Ð	0.9	Ð
DYNAMIC CHARACTERISTICS
Current±Gain Ð Bandwidth Product	fT	Ð	200	Ð	MHz
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
Output Capacitance	Cob	Ð	7.0	Ð	pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance	Cib	Ð	50	Ð	pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

		TURN±ON TIME		TURN±OFF TIME
		±1.0 V	VCC	+VBB		VCC
	5.0 μs		+40 V			+40 V
	+10 V	100	RL		100	RL
		RB	OUTPUT	Vin	RB	OUTPUT
	Vin
	0
	tr = 3.0 ns	5.0 μF 100	*C < 6.0 pF	5.0 μF	100	*C < 6.0 pF
			S			S

5.0 μs tr = 3.0 ns

*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data