MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCW68GLT1/D
General Purpose |
Transistor |
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PNP Silicon |
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COLLECTOR |
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3 |
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1 |
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BASE |
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2 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Unit |
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Collector±Emitter Voltage |
VCEO |
±45 |
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Vdc |
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Collector±Base Voltage |
VCBO |
±60 |
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Vdc |
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Emitter±Base Voltage |
VEBO |
±5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
±800 |
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mAdc |
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DEVICE MARKING
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
BCW68GLT1
1
2
CASE 318 ± 08, STYLE 6 SOT± 23 (TO ± 236AB)
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Characteristic |
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Symbol |
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Max |
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Unit |
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Total Device Dissipation FR-5 Board (1) |
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P |
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225 |
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mW |
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TA = 25°C |
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D |
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mW/°C |
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Derate above 25°C |
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1.8 |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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556 |
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°C/W |
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Total Device Dissipation |
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PD |
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300 |
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mW |
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Alumina Substrate, (2) T = 25°C |
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A |
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Derate above 25°C |
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2.4 |
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mW/°C |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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417 |
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°C/W |
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Junction and Storage Temperature |
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TJ, Tstg |
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± 55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
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Min |
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Typ |
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Max |
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Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage (IC = ±10 mAdc, IB = 0) |
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V(BR)CEO |
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±45 |
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Ð |
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Ð |
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Vdc |
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Collector±Emitter Breakdown Voltage (IC = ±10 μAdc, VEB = 0) |
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V(BR)CES |
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±60 |
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Ð |
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Ð |
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Vdc |
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Emitter±Base Breakdown Voltage (IE = ±10 μAdc, IC = 0) |
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V(BR)EBO |
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±5.0 |
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Ð |
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Ð |
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Vdc |
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Collector Cutoff Current |
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ICES |
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(VCE= ±45 Vdc, IE = 0) |
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Ð |
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Ð |
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±20 |
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nAdc |
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(VCE= ±45 Vdc, IB = 0, TA = 150°C) |
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Ð |
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Ð |
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±10 |
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μAdc |
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Emitter Cutoff Current (VEB = ±4.0 Vdc, IC = 0) |
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IEBO |
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Ð |
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Ð |
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±20 |
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nAdc |
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1. |
FR±5 = 1.0 x 0.75 x 0.062 in. |
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2. |
Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina |
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Thermal Clad is a trademark of the Bergquist Company
Motorola, Inc. 1996
BCW68GLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
hFE |
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Ð |
(IC = ±10 mAdc, VCE = ±1.0 Vdc) |
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120 |
Ð |
400 |
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(IC = ±100 mAdc, VCE = ±1.0 Vdc) |
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160 |
Ð |
Ð |
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(IC = ±300 mAdc, VCE = ±1.0 Vdc) |
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60 |
Ð |
Ð |
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Collector±Emitter Saturation Voltage (IC = ±300 mAdc, IB = ±30 mAdc) |
VCE(sat) |
Ð |
Ð |
±1.5 |
Vdc |
Base±Emitter Saturation Voltage (IC = ±500 mAdc, IB = ±50 mAdc) |
VBE(sat) |
Ð |
Ð |
±2.0 |
Vdc |
SMALL±SIGNAL CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product |
fT |
100 |
Ð |
Ð |
MHz |
(IC = ±20 mAdc, VCE = ±10 Vdc, f = 100 MHz) |
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Output Capacitance |
Cobo |
Ð |
Ð |
18 |
pF |
(VCB= ±10 Vdc, IE = 0, f = 1.0 MHz) |
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Input Capacitance |
Cibo |
Ð |
Ð |
105 |
pF |
(VEB= ±0.5 Vdc, IC = 0, f = 1.0 MHz) |
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Noise Figure |
NF |
Ð |
Ð |
10 |
dB |
(IC= ±0.2 mAdc, VCE = ±5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz, |
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BW = 200 Hz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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