ON Semiconductor 2N6028, 2N6027 Datasheet

2N6027, 2N6028

Preferred Device

Programmable

Unijunction Transistor

Programmable Unijunction

Transistor Triggers

Designed to enable the engineer to ªprogram'' unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor±trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO±92 plastic package for high±volume requirements, this package is readily adaptable for use in automatic insertion equipment.

•Programmable Ð RBB, η, IV and IP

•Low On±State Voltage Ð 1.5 Volts Maximum @ IF = 50 mA

•Low Gate to Anode Leakage Current Ð 10 nA Maximum

•High Peak Output Voltage Ð 11 Volts Typical

•Low Offset Voltage Ð 0.35 Volt Typical (RG = 10 k ohms)

•Device Marking: Logo, Device Type, e.g., 2N6027, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
*Power Dissipation	PF	300	mW
Derate Above 25°C	1/θJA	4.0	mW/°C
*DC Forward Anode Current	IT	150	mA
Derate Above 25°C		2.67	mA/°C
*DC Gate Current	IG	"50	mA
Repetitive Peak Forward Current	ITRM		Amps
100 μs Pulse Width, 1% Duty Cycle		1.0
*20 μs Pulse Width, 1% Duty Cycle		2.0
Non±Repetitive Peak Forward Current	ITSM	5.0	Amps
10 μs Pulse Width
*Gate to Cathode Forward Voltage	VGKF	40	Volts
*Gate to Cathode Reverse Voltage	VGKR	*5.0	Volts
*Gate to Anode Reverse Voltage	VGAR	40	Volts
*Anode to Cathode Voltage(1)	V	"40	Volts
	AK
Operating Junction Temperature Range	TJ	±50 to	°C
		+100
*Storage Temperature Range	Tstg	±55 to	°C
		+150
*Indicates JEDEC Registered Data
(1) Anode positive, RGA = 1000 ohms
Anode negative, RGA = open

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PUTs

40 VOLTS

300 mW

G

AK

1

	2 3
	TO±92 (TO±226AA)
	CASE 029
	STYLE 16
	PIN ASSIGNMENT
1	Anode
2	Gate
3	Cathode

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2000	1	Publication Order Number:
May, 2000 ± Rev. 2		2N6027/D

2N6027, 2N6028

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RqJC	75	°C/W
Thermal Resistance, Junction to Ambient	RqJA	200	°C/W
Maximum Lead Temperature for Soldering Purposes	TL	260	°C
(t1/16″ from case, 10 secs max)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

		Characteristic		Fig. No.	Symbol	Min	Typ	Max	Unit
*Peak Current				2,9,11	IP				mA
(VS = 10 Vdc, RG = 1 MW)			2N6027			Ð	1.25	2.0
			2N6028			Ð	0.08	0.15
(VS = 10 Vdc, RG = 10 k ohms)			2N6027			Ð	4.0	5.0
			2N6028			Ð	0.70	1.0
*Offset Voltage				1	VT				Volts
(VS = 10 Vdc, RG = 1 MW)			2N6027			0.2	0.70	1.6
			2N6028			0.2	0.50	0.6
(VS = 10 Vdc, RG = 10 k ohms)			(Both Types)			0.2	0.35	0.6
*Valley Current				1,4,5	IV				mA
(VS = 10 Vdc, RG = 1 MW)			2N6027			Ð	18	50
			2N6028			Ð	18	25
(VS = 10 Vdc, RG = 10 k ohms)			2N6027			70	150	Ð
			2N6028			25	150	Ð
(VS = 10 Vdc, RG = 200 ohms)			2N6027			1.5	Ð	Ð	mA
			2N6028			1.0	Ð	Ð
*Gate to Anode Leakage Current				Ð	IGAO				nAdc
(VS = 40 Vdc, TA = 25°C, Cathode Open)						Ð	1.0	10
(VS = 40 Vdc, TA = 75°C, Cathode Open)						Ð	3.0	Ð
Gate to Cathode Leakage Current				Ð	IGKS	Ð	5.0	50	nAdc
(VS = 40 Vdc, Anode to Cathode Shorted)
*Forward Voltage (I	F	= 50 mA Peak)(1)		1,6	V	Ð	0.8	1.5	Volts
					F
*Peak Output Voltage				3,7	Vo	6.0	11	Ð	Volt
(VG = 20 Vdc, CC = 0.2 mF)
Pulse Voltage Rise Time				3	tr	Ð	40	80	ns
(VB = 20 Vdc, CC = 0.2 mF)
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.

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2

2N6027, 2N6028

IA	A	+VB		IA	RG =	R1 R2
		R2				R1 + R2
				+
		G	R1
		± VS =		VB
			R1 + R2		RG
VAK
		R1		VAK
						VS
		K

1A ±	Programmable Unijunction	1B ±	Equivalent Test Circuit for
			Figure 1A used for electrical
	with ªProgramº Resistors
			characteristics testing
	R1 and R2
			(also see Figure 2)

		VA
		±VP
		VS	VT = VP ± VS
		VF
		VV		IA
I		IP	IV
	GAO			IF
		IC ± Electrical Characteristics

Figure 1. Electrical Characterization

±

+VB

Adjust

+V

100k

IP (SENSE)

for

1.0%

100 μV = 1.0 nA

510k

16k

Vo

Turn±on

+

Threshold

2N5270

6 V

R

VB

0.01 μF

RG = R/2

CC

27k

V

= V

B/2

v

o

S

Scope

(See Figure 1)

20

Ω

0.6 V

t

20

Put

tf

Under

R

Test

Figure 2. Peak Current (IP) Test Circuit

Figure 3. Vo and tr Test Circuit

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3