ON Semiconductor 2N5089, 2N5088RLRE, 2N5088RLRA, 2N5088, 2N5089RLRE Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5088/D
Amplifier Transistors
NPN Silicon
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COLLECTOR |
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3 |
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2 |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
2N508 |
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2N508 |
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Unit |
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8 |
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9 |
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Collector± Emitter Voltage |
VCEO |
30 |
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25 |
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Vdc |
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Collector± Base Voltage |
VCBO |
35 |
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30 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
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3.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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50 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
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1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA(1) |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N5088
2N5089
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(2) |
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V(BR)CEO |
30 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
2N5088 |
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2N5089 |
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25 |
Ð |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
35 |
Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
2N5088 |
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2N5089 |
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30 |
Ð |
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Collector Cutoff Current |
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ICBO |
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nAdc |
(VCB = 20 Vdc, IE = 0) |
2N5088 |
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Ð |
50 |
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(VCB = 15 Vdc, IE = 0) |
2N5089 |
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Ð |
50 |
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Emitter Cutoff Current |
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IEBO |
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nAdc |
(VEB(off) = 3.0 Vdc, IC = 0) |
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Ð |
50 |
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(VEB(off) = 4.5 Vdc, IC = 0) |
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Ð |
100 |
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1.RθJA is measured with the device soldered into a typical printed circuit board.
2.Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Motorola, Inc. 1996
2N5088 |
2N5089 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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(IC = 100 μAdc, VCE = 5.0 Vdc) |
2N5088 |
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300 |
900 |
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2N5089 |
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400 |
1200 |
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(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
2N5088 |
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350 |
Ð |
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2N5089 |
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450 |
Ð |
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(IC = 10 mAdc, VCE = 5.0 Vdc)(2) |
2N5088 |
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300 |
Ð |
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2N5089 |
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400 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
Ð |
0.5 |
Vdc |
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(IC = 10 mAdc, IB = 1.0 mAdc) |
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Base ± Emitter On Voltage |
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VBE(on) |
Ð |
0.8 |
Vdc |
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(IC = 10 mAdc, VCE = 5.0 Vdc)(2) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
50 |
Ð |
MHz |
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(IC = 500 μAdc, VCE = 5.0 Vdc, f = 20 MHz) |
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Collector±Base Capacitance |
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Ccb |
Ð |
4.0 |
pF |
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(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
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Emitter±Base Capacitance |
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Ceb |
Ð |
10 |
pF |
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(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
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Small±Signal Current Gain |
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hfe |
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Ð |
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(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) |
2N5088 |
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350 |
1400 |
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2N5089 |
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450 |
1800 |
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Noise Figure |
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NF |
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dB |
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(IC = 100 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, |
2N5088 |
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Ð |
3.0 |
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f = 1.0 kHz) |
2N5089 |
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Ð |
2.0 |
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2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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