Analog Devices OP275GP, OP275GSR, OP275GS, OP275GBC Datasheet

a		Dual Bipolar/JFET, Audio
		Operational Amplifier
		OP275*

FEATURES

Excellent Sonic Characteristics

Low Noise: 6 nV/√Hz

Low Distortion: 0.0006%

High Slew Rate: 22 V/ms

Wide Bandwidth: 9 MHz

Low Supply Current: 5 mA

Low Offset Voltage: 1 mV

Low Offset Current: 2 nA

Unity Gain Stable

SOIC-8 Package

APPLICATIONS

High Performance Audio

Active Filters

Fast Amplifiers

Integrators

GENERAL DESCRIPTION

The OP275 is the first amplifier to feature the Butler Amplifier front-end. This new front-end design combines both bipolar and JFET transistors to attain amplifiers with the accuracy and low noise performance of bipolar transistors, and the speed and sound quality of JFETs. Total Harmonic Distortion plus Noise equals that of previous audio amplifiers, but at much lower supply currents.

A very low l/f corner of below 6 Hz maintains a flat noise density response. Whether noise is measured at either 30 Hz or 1 kHz, it is only 6 nV/√Hz. The JFET portion of the input stage gives the OP275 its high slew rates to keep distortion low, even when large output swings are required, and the 22 V/µs slew rate of the OP275 is the fastest of any standard audio amplifier. Best of all, this low noise and high speed are accomplished using less than 5 mA of supply current, lower than any standard audio amplifier.

PIN CONNECTIONS

8-Lead Narrow-Body SO	8-Lead Epoxy DIP
(S Suffix)	(P Suffix)

	OUT A	1	8	V+	OUT A	1	OP275	8	V+
	–IN A	2	7	OUT B
	+IN A	OP275	6	–IN B	–IN A	2		7	OUT B
		3
	V–	4	5	+IN B	+IN A	3		6	–IN B
					V–	4		5	+IN B

Improved dc performance is also provided with bias and offset currents greatly reduced over purely bipolar designs. Input offset voltage is guaranteed at 1 mV and is typically less than 200 µV. This allows the OP275 to be used in many dc coupled

or summing applications without the need for special selections or the added noise of additional offset adjustment circuitry.

The output is capable of driving 600 Ω loads to 10 V rms while maintaining low distortion. THD + Noise at 3 V rms is a low 0.0006%.

The OP275 is specified over the extended industrial (–40°C to +85°C) temperature range. OP275s are available in both plastic DIP and SOIC-8 packages. SOIC-8 packages are available in 2500 piece reels. Many audio amplifiers are not offered in SOIC-8 surface mount packages for a variety of reasons; however, the OP275 was designed so that it would offer full performance in surface mount packaging.

*Protected by U.S. Patent No. 5,101,126.

REV. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

© Analog Devices, Inc., 1995

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: [phone] Fax: [phone]

OP275–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 615.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Units
AUDIO PERFORMANCE
THD + Noise		VIN = 3 V rms,
		RL = 2 kΩ, f = 1 kHz		0.006		%
Voltage Noise Density	en	f = 30 Hz		7		nV/√		Hz
		f = 1 kHz		6		nV/√		Hz
Current Noise Density	in	f = 1 kHz		1.5		pA/√
							Hz
Headroom		THD + Noise ≤ 0.01%,
		RL = 2 kΩ, VS = ± 18 V		>12.9		dBu
INPUT CHARACTERISTICS
Offset Voltage	VOS	–40°C ≤ TA ≤ +85°C			1	mV
					1.25	mV
Input Bias Current	IB	VCM = 0 V		100	350	nA
Input Offset Current	IOS	VCM = 0 V, –40°C ≤ TA ≤ +85°C		100	400	nA
		VCM = 0 V		2	50	nA
Input Voltage Range	VCM	VCM = 0 V, –40°C ≤ TA ≤ +85°C		2	100	nA
		VCM = ±10.5 V,	–10.5		+10.5	V
Common-Mode Rejection Ratio	CMRR
		–40°C ≤ TA ≤ +85°C	80	106		dB
Large Signal Voltage Gain	AVO	RL = 2 kΩ	250			V/mV
		RL = 2 kΩ, –40°C ≤ TA ≤ +85°C	175			V/mV
		RL = 600 Ω		200		V/mV
Offset Voltage Drift	VOS/ T			2		µV/°C
OUTPUT CHARACTERISTICS		RL = 2 kΩ		± 13.9
Output Voltage Swing	VO		–13.5		+13.5	V
		RL = 2 kΩ, –40°C ≤ TA ≤ +85°C	–13	± 13.9	+13	V
		RL = 600 Ω, VS = ±18 V		+14, –16		V
POWER SUPPLY		VS = ±4.5 V to ± 18 V
Power Supply Rejection Ratio	PSRR		85	111		dB
		VS = ±4.5 V to ± 18 V,
		–40°C ≤ TA ≤ +85°C	80			dB
Supply Current	ISY	VS = ±4.5 V to ± 18 V, VO = 0 V,
		RL = ∞, –40°C ≤ TA ≤ +85°C		4	5	mA
		VS = ±22 V, VO = 0 V, RL = ∞,
		–40°C ≤ TA ≤ +85°C			5.5	mA
Supply Voltage Range	VS		± 4.5		± 22	V
DYNAMIC PERFORMANCE		RL = 2 kΩ				V/µs
Slew Rate	SR		15	22
Full-Power Bandwidth	BWP					kHz
Gain Bandwidth Product	GBP			9		MHz
Phase Margin	øm	VIN = 100 mV, AV = +1,		62		Degrees
Overshoot Factor
		RL = 600 Ω, CL = 100 pF		10		%

Specifications subject to change without notice.

–2–

REV. A

				OP275
WAFER TEST LIMITS (@ VS = 615.0 V, TA = +258C unless otherwise noted)
Parameter	Symbol	Conditions	Limit	Units
Offset Voltage	VOS		1	mV max
Input Bias Current	IB	VCM = 0 V	350	nA max
Input Offset Current	IOS	VCM = 0 V	50	nA max
Input Voltage Range1	VCM	VCM = ±10.5 V	± 10.5	V min
Common-Mode Rejection Ratio	CMRR		80	dB min
Power Supply Rejection Ratio	PSRR	V = ±4.5 V to ± 18 V	85	dB min
Large Signal Voltage Gain	AVO	RL = 2 kΩ	250	V/mV min
Output Voltage Range	VO	RL = 10 kΩ	± 13.5	V min
Supply Current	ISY	VO = 0 V, RL = ∞	5	mA max

NOTES

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

1Guaranteed by CMRR test.

Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATINGS1						±22 V
Supply Voltage . . . . . . . . . .		. . . . . . . .	. . .	. . .	. . . .
Input Voltage2 . . . . . . . . . .		. . . . . . . .	. . .	. . .	. . . .	. . . . ±22 V
Differential Input Voltage2 .		. . . . . . . .	. . .	. . .	. . . .	. . . . ±7.5 V
Output Short-Circuit Duration to GND3				. . .	. . . .	. . Indefinite
Storage Temperature Range					–65°C to +150°C
P, S Package . . . . . . . . . .		. . . . . . . .	. . .	. . .
Operating Temperature Range					–40°C to +85°C
OP275G . . . . . . . . . . . . .		. . . . . . . .	. . .	. . .
Junction Temperature Range					–65°C to +150°C
P, S Package . . . . . . . . . .		. . . . . . . .	. . .	. . .
Lead Temperature Range (Soldering, 60 sec)					. . . .	. . . +300°C
Package Type		θJA4		θJC		Units
8-Pin Plastic DIP (P)		103		43		°C/W
8-Pin SOIC (S)		158		43		°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages greater than ±22 V, the absolute maximum input voltage is equal to the supply voltage.

3Shorts to either supply may destroy the device. See data sheet for full details. 4θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit board for SOIC package.

ORDERING GUIDE

Model	Temperature Range	Package Option
OP275GP	–40°C to +85°C	8-Pin Plastic DIP
OP275GS	–40°C to +85°C	8-Pin SOIC
OP275GSR	–40°C to +85°C	SO-8 Reel, 2500 pcs.
OP275GBC	+25°C	DICE

DICE CHARACTERISTICS

Die Size 0.070 × 0.108 in. (7,560 sq. mils) Substrate is connected to V–

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP275 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. A

–3–

OP275–Typical Performance Curves

	25
	20	TA = +25°C
V	15	RL = 2kΩ
–					+VOM
SWING	10
	5
VOLTAGE	0
	–5
OUTPUT	–10
	–15				–VOM
	–20
	–25	±5	±10	±15	±20	±25
	0

SUPPLY VOLTAGE – V

Output Voltage Swing vs. Supply Voltage

60

MARKER 15 309.059Hz

MAG (A/H)

60.115dB

50

VS = ±15V

TA = +25°C

40

135

–GAINdB

30

Degrees

20

90

MARKER 15 309.058Hz

10

PHASE (A/R

90.606Deg

45

–

0

0

PHASE

–10

–45

–20

–90

10k

100k

1M

10M

FREQUENCY – Hz

Open-Loop Gain, Phase vs. Frequency

		1500
			VS = ±15V
		1250	VO = ±10V
	V/mV		+GAIN
		1000	RL = 2kΩ
	–
	GAIN	750	–GAIN
			RL = 2kΩ
	OPEN-LOOP
			+GAIN
		500	RL = 600Ω
		250	–GAIN
			RL = 600Ω

0
		–25	0	25	50	75	100
–50
			TEMPERATURE – °C

Open-Loop Gain vs. Temperature

	50
	40				VS = ±15V
		AVCL = +100			TA = +25°C
dB–
	30
GAIN
	20	AVCL = +10
LOOP-CLOSED	10
	0	AVCL = +1
	–10
	–20
	–30	10k	100k	1M	10M	100M
	1k

FREQUENCY – Hz

Closed-Loop Gain vs. Frequency

	120
– dB	100				VS = ±15V
					TA = +25°C
REJECTION	80
	60
COMMON-MODE
	40
	20
	0
	100	1k	10k	100k	1M	10M

FREQUENCY – Hz

Common-Mode Rejection vs. Frequency

	120
dB	100
–					+PSRR
REJECTION
	80
		VS = ±15V
	60	TA = +25°C
SUPPLY
	40			–PSRR
POWER	20
	0	100	1k	10k	100k	1M
	10
		FREQUENCY – Hz

Power Supply Rejection vs. Frequency

40

180

30

VS = ±15V

135

TA = +25°C

dB–GAIN

20

90

Degrees–PHASE

10

45

0

0

–10

–45

–20

–90

–30

–135

–40

–180

10k

100k

1M

10M

FREQUENCY – Hz

Closed-Loop Gain and Phase, AV = +1

60

50VS = ±15V TA = +25°C

	40			AVCL = +1
– Ω
			AVCL = +10
IMPEDANCE
	30		AVCL = +100
	20
	10
	0	1k	10k	100k	1M	10M
	100

FREQUENCY – Hz

Closed-Loop Output Impedance vs.

Frequency
	100
	80			VS = ±15V			0
				RL = 2kΩ
		GAIN
GAIN – dB	60			TA = +25°C			45
	40	PHASE			Øm = 58°		90	Degrees
	20						135
OPEN-LOOP								PHASE –
	0						180
	–20						225
	–40						270
	–60	10k	100k	1M	10M	100M
	1k

FREQUENCY – Hz

Open-Loop Gain, Phase vs. Frequency

–4–

REV. A