Analog Devices OP297FS-REEL7, OP297FS-REEL, OP297FS, OP297EZ, OP297EP Datasheet

8/21/97 4:00 PM
a		Dual Low Bias Current
		Precision Operational Amplifier
		OP297

FEATURES

Precision Performance in Standard SO-8 Pinout Low Offset Voltage: 50 mV max

Low Offset Voltage Drift: 0.6 mV/8C max

Very Low Bias Current: +258C (100 pA max)

–558C to +1258C (450 pA max)

Very High Open-Loop Gain (2000 V/mV min) Low Supply Current (Per Amplifier): 625 mA max

Operates From 62 V to 620 V Supplies High Common-Mode Rejection: 120 dB min

Pin Compatible to LT1013, AD706, AD708, OP221,

LM158, and MC1458/1558 with Improved Performance

APPLICATIONS

Strain Gauge and Bridge Amplifiers

High Stability Thermocouple Amplifiers

Instrumentation Amplifiers

Photo-Current Monitors

High-Gain Linearity Amplifiers

Long-Term Integrators/Filters

Sample-and-Hold Amplifiers

Peak Detectors

Logarithmic Amplifiers

Battery-Powered Systems

GENERAL DESCRIPTION

The OP297 is the first dual op amp to pack precision performance into the space-saving, industry standard 8-pin SO package. Its combination of precision with low power and extremely low input bias current makes the dual OP297 useful in a wide variety of applications.

Precision performance of the OP297 includes very low offset, under 50 V, and low drift, below 0.6 V/°C. Open-loop gain

exceeds 2000 V/mV insuring high linearity in every application.

PIN CONNECTIONS

Plastic Epoxy-DIP (P Suffix)

8-Pin Cerdip (Z Suffix)

8-Pin Narrow Body SOIC (S Suffix)

OUT A	1				8	V+
–IN A	2	A	+	B	7	OUT B
+IN A		–		+	–	–IN B
	3				6
V–	4				5	+IN B

Errors due to common-mode signals are eliminated by the OP297’s common-mode rejection of over 120 dB. The OP297’s power supply rejection of over 120 dB minimizes offset voltage changes experienced in battery powered systems. Supply current of the OP297 is under 625 A per amplifier and it can operate with supply voltages as low as ±2 V.

The OP297 utilizes a super-beta input stage with bias current cancellation to maintain picoamp bias currents at all temperatures. This is in contrast to FET input op amps whose bias currents start in the picoamp range at 25°C, but double for

every 10°C rise in temperature, to reach the nanoamp range above 85°C. Input bias current of the OP 297 is under 100 pA

at 25°C and is under 450 pA over the military temperature range.

Combining precision, low power and low bias current, the OP297 is ideal for a number of applications including instrumentation amplifiers, log amplifiers, photodiode preamplifiers and long-term integrators. For a single device, see the OP97; for a quad, see the OP497.

INPUT CURRENT (pA)

6 0					VS = ±15V			400
	IB–							1200 UNITS			TA = +25°C
4 0					VCM = 0V						VS = ±15V
											VCM = 0V
	IB+							300
2 0								UNITSOF
0								200
2 0	IOS							NUMBER
								100
– 4 0
– 6 0	–25	0	25	50	75	100	125	0	0	20	40 60 80 100
–75 –50								–100 –80 –60 –40 –20
	TEMPERATURE (°C)							INPUT OFFSET VOLTAGE ( V)

Figure 1. Low Bias Current Over Temperature

REV. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Figure 2. Very Low Offset

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 1997

8/21/97 4:00 PM

OP297–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, TA = +258C, unless otherwise noted.)

OP297A/E

OP297F

OP297G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Units

Input Offset Voltage

VOS

25

50

50

100

80

200

µV

Long-Term Input

µV/mo

Voltage Stability

0.1

0.1

0.1

Input Offset Current

IOS

VCM = 0 V

20

100

35

150

50

200

pA

Input Bias Current

IB

VCM = 0 V

20

±100

35

±150

50

±200

pA

Input Noise Voltage

en p-p

0.1 Hz to 10 Hz

0.5

0.5

0.5

µV p-p

Input Noise

en

fO = 10 Hz

20

20

20

nV/√Hz

Voltage Density

n e

fO = 1000 Hz

17

17

17

nV/√Hz

Input Noise Current Density

in

fO = 10 Hz

20

20

20

fA√Hz

Input Resistance

MΩ

Differential Mode

INR

30

30

30

Input Resistance

GΩ

Common-Mode

INCMR

VO = ± 10 V

500

500

500

Large-Signal

Voltage Gain

VOA

RL = 2 kΩ

2000

4000

1500

3200

1200

3200

V/mV

Input Voltage Range

IVR

(Note 1)

±13

±14

±13

±14

±13

±14

V

Common-Mode Rejection

CMR

VCM = ± 13 V

120

140

114

135

114

135

dB

Power Supply Rejection

PSR

VS = ±2 V to ±20 V

120

130

114

125

114

125

dB

Output Voltage Swing

VO

RL = 10 kΩ

±13

±14

±13

±14

±13

±14

V

VO

RL = 2 kΩ

±13

±13.7

±13

±13.7

±13

±13.7

V

Supply Current Per Amplifier

ISY

No Load

525

625

525

625

525

625

µA

Supply Voltage

VS

Operating Range

± 2

±20

±2

±20

±2

±20

V

Slew Rate

SR

0.05

0.15

0.05

0.15

0.05

0.15

V/µs

Gain Bandwidth Product

GBWP

AV = +1

500

500

500

kHz

Channel Separation

CS

VO = 20 V p–p

150

150

150

dB

Input Capacitance

CIN

fO = 10 Hz

3

3

3

pF

NOTES

1Guaranteed by CMR test.

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, –558C ≤ TA ≤ +1258C for OP297A, unless otherwise noted.)

				OP297A
Parameter	Symbol	Conditions	Min	Typ	Max	Units
Input Offset Voltage	VOS			45	100	µV
Average Input Offset Voltage Drift	TCVOS			0.2	0.6	µV/°C
Input Offset Current	IOS	VCM = 0 V		60	450	pA
Input Bias Current	IB	VCM = 0 V		60	± 450	pA
Large-Signal Voltage Gain	AVO	VO = ± 10 V, RL = 2 kΩ	1200	2700		V/mV
Input Voltage Range	IVR	(Note 1)	± 13	± 13.5		V
Common-Mode Rejection	CMR	VCM = ±13	114	130		dB
Power Supply Rejection	PSR	VS = ±2.5 V to ± 20 V	114	125		dB
Output Voltage Swing	VO	RL = 10 kΩ	± 13	± 13.4		V
Supply Current Per Amplifier	ISY	No Load		575	750	µA
Supply Voltage	VS	Operating Range	± 2.5		± 20	V

NOTES

1Guaranteed by CMR test.

Specifications subject to change without notice.

–2–

REV. D

8/21/97 4:00 PM

OP297

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, –408C ≤ TA ≤ +858C for OP297E/F/G, unless otherwise noted.)

OP297E

OP297F

OP297G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Units

Input Offset Voltage

VOS

35

100

80

300

110

400

µV

Average Input Offset

µV/°C

Voltage Drift

TCVOS

0.2

0.6

0.5

2.0

0.6

2.0

Input Offset Current

IOS

VCM = 0 V

50

450

80

750

80

750

pA

Input Bias Current

IB

VCM = 0 V

50

±450

80

±750

80

±750

pA

Large-Signal Voltage Gain

AVO

VO = ±10 V,

RL = 2 kΩ

1200

3200

1000

2500

700

2500

V/mV

Input Voltage Range

IVR

(Note 1)

±13

±13.5

±13

±13.5

±13

±13.5

V

Common-Mode Rejection

CMR

VCM = ±13

114

130

108

130

108

130

dB

Power Supply Rejection

PSR

VS = ±2.5 V

to ±20 V

114

0.15

108

0.15

108

0.3

dB

Output Voltage Swing

VO

RL = 10 kΩ

±13

±13.4

±13

±13.4

±13

±13.4

V

Supply Current Per Amplifier

ISY

No Load

550

750

550

750

550

750

µA

Supply Voltage

VS

Operating Range

±2.5

±20

±2.5

±20

±2.5

±20

V

NOTES

1Guaranteed by CMR test.

Specifications subject to change without notice.

Wafer Test Limits (@ VS = 615 V, TA = +258C, unless otherwise noted.)

Parameter

Symbol

Conditions

Limit

Units

Input Offset Voltage

VOS

200

µV max

Input Offset Current

IOS

VCM = 0 V

200

pA max

Input Bias Current

IB

VCM = 0 V

±200

pA max

Large-Signal Voltage Gain

AVO

VO = ± 10 V, RL = 2 kΩ

1200

V/mV min

Input Voltage Range

IVR

(Note 1)

±13

V min

Common-Mode Rejection

CMR

VCM = ±13 V

114

dB min

Power Supply

PSR

VS = ±2 V to ± l 8 V

114

dB min

Output Voltage Swing

VO

RL = 2 kΩ

±13

V min

Supply Current Per Amplifier

ISY

No Load

625

µA max

NOTES

1. Guaranteed by CMR test.

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

DICE CHARACTERISTICS

Dimension shown in inches and (mm).

Contact factory for latest dimensions

OUTPUT A

+VS

0.118 (3.00)

–INPUT A

OUTPUT B

+INPUT A

–INPUT B

–V +INPUT B

S

0.074 (1.88)

REV. D

–3–

8/21/97 4:00 PM

OP297

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . 40 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite

Storage Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

OP297A (Z) . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C

OP297E, F (Z) . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C OP297F, G (P, S) . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Junction Temperature

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C

Package Type	uJA3	uJC	Units
8-Pin Cerdip (Z)	134	12	°C/W
8-Pin Plastic DIP (P)	96	37	°C/W
8-Pin SO (S)	150	41	°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages less than ±20 V, the absolute maximum input voltage is equal to the supply voltage.

3θJA is specified for worst case mounting conditions, i.e., θJA is specified for device in socket for cerdip and P-DIP, packages; θJA is specified for device soldered to printed circuit board for SO package.

ORDERING GUIDE1

	Temperature	Package	Package
Model	Range	Description	Option1
OP297AZ	–55°C to +125°C	8-Pin Cerdip	Q-8
OP297EZ	–40°C to +85°C	8-Pin Cerdip	Q-8
OP297EP	–40°C to +85°C	8-Pin Plastic DIP	N-8
OP297FP	–40°C to +85°C	8-Pin Plastic DIP	N-8
OP297FS	–40°C to +85°C	8-Pin SO	SO-8
OP297FS-REEL	–40°C to +85°C	8-Pin SO	SO-8
OP297FS-REEL7	–40°C to +85°C	8-Pin SO	SO-8
OP297GP	–40°C to +85°C	8-Pin Plastic DIP	N-8
OP297GS	–40°C to +85°C	8-Pin SO	SO-8
OP297GS-REEL	–40°C to +85°C	8-Pin SO	SO-8
OP297GS-REEL72	–40°C to +85°C	8-Pin SO	SO-8

NOTES

1Burn-in is available on extended industrial temperature range parts in cerdip, and plastic DIP packages. For outline information see Package Information section.

2For availability and burn-in information on SO packages, contact your local sales office.

–

1/2

OP-297	V1 20Vp-p @ 10Hz
+	2kΩ
50kΩ
50Ω
–
1/2	V2
OP-297
+
CHANNEL SEPARATION = 20 log		V1
	)V2/10000)

Figure 3. Channel Separation Test Circuit

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP297 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. D

8/21/97 4:00 PM

400
1200 UNITS			TA = +25°C
			VS = ±15V
300			VCM = 0V
OFUNITS
200
NUMBER
100
0	0	20	40	60	80 100
–100 –80 –60 –40 –20

INPUT OFFSET VOLTAGE ( V)

Figure 4. Typical Distribution of Input

Offset Voltage

6 0

IB–

VS = ±15V

4 0

VCM = 0V

(pA)

IB+

2 0

CURRENT

0

INPUT

IOS

2 0

– 4 0

– 6 0

–75 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C)

Figure 7. Input Bias, Offset Current vs. Temperature

10000

( V)

BALANCED

OR

UNBALANCED

VS = ±15V

VCM = 0V

VOLTAGEOFFSET

1000

EFFECTIVE

100

–55°C ≤ TA ≤ 125°C

TA = +25°C

10

100

1k

10k

100k

1M

10M

10

SOURCE RESISTANCE (Ω)

Figure 10. Effective Offset Voltage vs. Source Resistance

Typical Performance Characteristics–OP297

	250
	1200			TA = +25°C
	UNITS			VS = ±15V
	200			VCM = 0V
UNITS	150
OF
NUMBER	100
	50
	0
	–100 –80 –60 –40 –20	0	20	40	60	80 100

INPUT BIAS CURRENT (pA)

Figure 5. Typical Distribution of Input

Bias Current

60

TA = +25°C

40

VS = ±15V

(pA)

IB–

20

IB+

CURRENT

0

IOS

INPUT

–20

–40

–60

–10

–5

0

5

10

15

–15

COMMON-MODE VOLTAGE (VOLTS)

400
1200 UNITS			TA = +25°C
			VS = ±15V
300			VCM = 0V
OFUNITS
200
NUMBER
100
0
–100 –80 –60 –40 –20	0	20	40	60	80 100

INPUT OFFSET CURRENT (pA)

Figure 6. Typical Distribution of Input Offset Current

	±3
( V)			TA = +25°C
			VS = ±15V
VALUE			VCM = 0V
FROM FINAL	±2
	±1
DEVIATION
	0
	0		1		2		3		4		5

TIME AFTER POWER APPLIED (MINUTES)

Figure 8. Input Bias, Offset Current	Figure 9. Input Offset Voltage Warm-
vs. Common-Mode Voltage	Up Drift

C)

100

V/°

BALANCED

OR

UNBALANCED

(

VS = ±15V

DRIFT

VCM = 0V

VOLTAGE

10

OFFSETEFFECTIVE

0.1

1

100

1k

10k

100k

1M

10M

100M

SOURCE RESISTANCE (Ω)

Figure 11. Effective TCVOS vs. Source Resistance

35

(mA)

30

TA = –55°C

25

CURRENT

20

TA =

+25°C

5

VS

= ±15V

15

TA = +125°C

10

CIRCUIT

0

OUTPUT SHORTED

–5

TO GROUND

SHORT-

–10

–15

T

A = +125°C

–20

TA = +25°C

–25

–30

TA = –55°C

–35

0

1

2

3

4

TIME FROM OUTPUT SHORT (MINUTES)

Figure 12. Short Circuit Current vs. Time, Temperature

REV. D

–5–