Analog Devices OP470GS, OP470AY, OP470FY, OP470GP, OP470EY Datasheet

a		OperationalVery Low NoiseAmplifierQuad
		OP470

FEATURES

Very Low-Noise, 5 nV/ Hz @ 1 kHz Max

Excellent Input Offset Voltage, 0.4 mV Max

Low Offset Voltage Drift, 2 V/ C Max

Very High Gain, 1000 V/mV Min

Outstanding CMR, 110 dB Min

Slew Rate, 2 V/ s Typ

Gain-Bandwidth Product, 6 MHz Typ

Industry Standard Quad Pinouts

Available in Die Form

GENERAL DESCRIPTION

The OP470 is a high-performance monolithic quad operational amplifier with exceptionally low voltage noise, 5 nV/X/ Hz at 1 kHz Max, offering comparable performance to ADI’s industry standard OP27.

The OP470 features an input offset voltage below 0.4 mV, excellent for a quad op amp, and an offset drift under 2 μV/∞C, guaranteed over the full military temperature range. Open loop gain of the OP470 is over 1,000,000 into a 10 kΩ load ensuring excellent gain accuracy and linearity, even in high gain applications. Input bias current is under 25 nA, which reduces errors due to signal source resistance. The OP470’s CMR of over 110 dB and PSRR of less than 1.8 μV/V significantly reduce errors due to ground noise and power supply fluctuations. Power consumption of the quad OP470 is half that of four OP27s, a significant advantage for power conscious applications. The OP470 is unity-gain stable with a gain bandwidth product of 6 MHz and a slew rate of 2 V/μs.

The OP470 offers excellent amplifier matching which is important for applications such as multiple gain blocks, low noise instrumentation amplifiers, quad buffers, and low noise active filters.

The OP470 conforms to the industry standard 14-pin DIP pinout. It is pin compatible with the LM148/149, HA4741, HA5104, and RM4156 quad op amps and can be used to upgrade systems using these devices.

For higher speed applications, the OP471, with a slew rate of 8 V/μs, is recommended.

PIN CONNECTIONS

14–Lead Hermetic Dip (Y–Suffix)

14–Lead Plastic Dip (P–Suffix)

OUT A	1		14	OUT D
ñIN A	2		13	ñIN D
+IN A	3		12	+IN D
V+	4	OP470	11	Vñ
+IN B	5		10	+IN C
ñIN B	6		9	ñIN C
OUT B	7		8	OUT C

16–Lead SOIC Package

		(R–Suffix)
OUT A	1		16	OUT D
ñIN A	2		15	ñIN D
+IN A	3		14	+IN D
V+	4	OP470	13	Vñ
+IN B	5		12	+IN C
ñIN B	6		11	ñIN C
OUT B	7		10	OUT C
NC	8		9	NC

NC = NO CONNECT

	SIMPLIFIED SCHEMATIC
	V+
	BIAS
ñIN	+IN

Vñ

REV. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

OP470–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (at VS = 15 V, TA = 25 C, unless otherwise noted.)

			OP470A/E			OP470F			OP470G
Parameter	Symbol	Conditions	Min	Typ	Max	Min	Typ	Max	Min	Typ	Max	Unit
INPUT OFFSET
VOLTAGE	VOS			0.1	0.4		0.2	0.8		0.4	1.0	mV
INPUT OFFSET
CURRENT	IOS	VCM = 0 V		3	10		6	20		12	30	nA
INPUT BIAS
CURRENT	IB	VCM = 0 V		6	25		15	50		25	60	nA
INPUT NOISE
VOLTAGE	enp-p	0.1 Hz to 10 Hz		80	200		80	200		80	200	nVp–p
		(Note 1)
INPUT NOISE		fO = 10 Hz		3.8	6.5		3.8	6.5		3.8	6.5	nV Hz
Voltage Density	en	fO = 100 Hz		3.3	5.5		3.3	5.5		3.3	5.5
		fO = 1 kHz		3.2	5.0		3.2	5.0		3.2	5.0
		(Note 2)
INPUT NOISE		fO = 10 Hz		1.7			1.7			1.7		pA Hz
Current Density	in	fO = 100 Hz		0.7			0.7			0 7
		fO = 1 kHz		0.4			0.4			0.4
LARGE-SIGNAL		V = ±10 V
Voltage Gain	AVO	RL = 10 kΩ	1000	2300		800	1700		800	1700		V/mV
		RL = 2 kΩ	500	1200		400	900		400	900
INPUT VOLTAGE			±11	±12		±11	±12		±11	±12
RANGE	IVR	(Note 3)										V
OUTPUT VOLTAGE		RL ≥ 2 kΩ	±12	±13		±12	±13		±12	±13
SWING	VO											V
COMMON-MODE		VCM = ±11 V
REJECTION	CMR		110	125		100	120		100	120		dB
POWER SUPPLY		VS = ±4.5 V to ±18 V										μV/V
Rejection Ratio	PSRR			0.56	1.8		1.0	5.6		1.0	5.6
SLEW RATE	SR		1.4	2		1.4	2		1.4	2		V/μs
SUPPLY CURRENT
(All Amplifiers)	ISY	No Load		9	11		9	11		9	11	mA
GAIN BANDWIDTH
PRODUCT	GBW	AV = 10		6			6			6		MHz
CHANNEL
SEPARATION	CS	VO = 20 Vp-p	125	155		125	155		125	155		dB
		fO = 10 Hz (Note 1)
INPUT
CAPACITANCE	CIN			2			2			2		pF
INPUT RESISTANCE	RIN			0.4			0.4			0.4		MΩ
Differential-Mode
INPUT RESISTANCE												GΩ
Common-Mode	RINCM			11			11			11
SETTLING TIME	tS	AV = 1										μs
		to 0.1%		5.5			5.5			5.5
		to 0.01 %		6.0			6.0			6.0

NOTES

1Guaranteed but not 100% tested

2Sample tested

3Guaranteed by CMR test

–2–

REV. A

OP470

ELECTRICAL CHARACTERISTICS (at VS = 15 V, –55 C ≤ TA ≤ 125 C for OP470A, unless otherwise noted.)

OP470A

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT OFFSET VOLTAGE

VOS

0.14

0.6

mV

AVERAGE INPUT

μV/∞C

Offset Voltage Drift

TCVOS

0.4

2

INPUT OFFSET CURRENT

IOS

VCM = 0 V

5

20

nA

INPUT BIAS CURRENT

IB

VCM = 0 V

15

20

nA

LARGE-SIGNAL

VO = ±10 V

Voltage Gain

AVO

RL = 10 kΩ

750

1600

V/mV

RL = 2 kΩ

400

800

INPUT VOLTAGE RANGE*

IVR

±11

±12

V

OUTPUT VOLTAGE SWING

VO

RL ≥ 2 kΩ

±12

±13

V

COMMON-MODE

VCM = ±11 V

REJECTION

CMR

100

120

dB

POWER SUPPLY

VS = ±4.5 V to ±18 V

μV/V

REJECTION RATIO

PSRR

1.0

5.6

SUPPLY CURRENT

(All Amplifiers)

ISY

No Load

—

9.2

11

mA

NOTE

*Guaranteed by CMR test

(at Vs = 15 V, –25 C ≤ TA ≤ 85 C for OP470E/OP470EF, –40 C ≤ TA ≤ 85 C for OP470G,

ELECTRICAL CHARACTERISTICS unless otherwise noted.)

OP470E

OP470F

OP470G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

INPUT OFFSET

VOLTAGE

VOS

0.12

0.5

0.24

1.0

0.5

1.5

mV

AVERAGE INPUT

mV/∞C

Offset Voltage Drift

TCVOS

0.4

2

0.6

4

2

INPUT OFFSET

CURRENT

IOS

VCM = 0 V

4

20

7

40

20

50

nA

INPUT BIAS

CURRENT

IB

VCM = 0 V

11

50

20

70

40

75

nA

LARGE-SIGNAL

VO = ±10 V

Voltage Gain

AVO

RL = 10 kΩ

800

1800

600

1400

600

1500

V/mV

RL = 2 kΩ

400

900

300

700

300

800

INPUT VOLTAGE

±11

±12

±11

±12

±11

±12

RANGE*

IVR

V

OUTPUT VOLTAGE

RL ≥ 2 kΩ

±12

±13

±12

±13

±12

±13

SWING

VO

V

COMMON-MODE

VCM = ±11 V

REJECTION

CMR

100

120

90

115

90

110

dB

POWER SUPPLY

PSRR

VS = ±4.5 V to ±18 V

0.7

5.6

1.8

10

1.8

10

μV/V

Rejection Ratio

SUPPLY CURRENT

(All Amplifiers)

ISY

No Load

—

9.2

11

—

9.2

11

—

9.3

11

mA

NOTE

*Guaranteed by CMR test

REV. A

–3–

OP470–SPECIFICATIONS

WAFER TEST LIMITS (at Vs = 15 V, 25 C, unless otherwise noted.)

			OP470GBC
Parameter	Symbol	Conditions	Limit	Unit
INPUT OFFSET VOLTAGE	VOS		0.8	mV MAX
INPUT OFFSET CURRENT	IOS	VCM = 0 V	20	nA MAX
INPUT BIAS CURRENT	IB	VCM = 0 V	50	nA MIN
LARGE-SIGNAL		VO = ±10 V
Voltage Gain	AVO	RL = 10 kΩ	800	V/mV MIN
		RL = 2 kΩ	400
INPUT VOLTAGE RANGE*	IVR		±11	V MIN
OUTPUT VOLTAGE SWING	VO	RL ≥ 2 kΩ	±12	V MIN
COMMON-MODE		VCM = ±11 V
REJECTION	CMR		100	dB
POWER SUPPLY		VS = ±4.5 V to ±18 V		μV/V MAX
REJECTION RATIO	PSRR		5.6
SUPPLY CURRENT
(All Amplifiers)	ISY	No Load	11	mA MAX

NOTE

*Guaranteed by CMR test

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

–4–

REV. A

OP470

ABSOLUTE MAXIMUM RATINGS1					±18 V
Supply Voltage . .	. . . . . . . . . . . .		. . . . . . . . .	.
Differential Input Voltage2 . . . . .			. . . . . . . . . .		. . . . . . . ±1.0 V
Differential Input Current2 . . . .			. . . . . . . . . .		. . . . . . ±25 mA
Input Voltage . . .	. . . . . . . . . . .	.	. . . . . . . . . .		. Supply Voltage
Output Short-Circuit Duration .			. . . . . . . . . .		. . . . Continuous
Storage Temperature Range				–65∞C to +150∞C
P, Y Package .	. . . . . . . . . . . .		. . . . . . . . .
Lead Temperature Range (Soldering 60 sec) .					. . . . . . . . 300∞C
Junction Temperature (Tj) . . . .			. . . . . . . . .	–65∞C to +150∞C
Operating Temperature Range				–55∞C to +125∞C
OP470A . . . .	. . . . . . . . . . . .		. . . . . . . . .
OP470E, OP470F . . . . . . . . .			. . . . . . . . . .		–25∞C to +85∞C
OP470G . . . .	. . . . . . . . . . . .		. . . . . . . . . .		–40∞C to +85∞C
	ORDERING GUIDE
TA = 25∞C	Package Options				Operating
VOS MAX	Cerdip				Temperature
( V)	14-Pin		Plastic		Range
400	OP470AY*				MIL
400					MIL
400	OP470EY				IND
800	OP470FY*				IND
1000			OP470GP		XIND
1000			OP470GS		XIND

*Not for new design; obsolete April 2002.

For military processed devices, please refer to the standard Microcircuit Drawing (SMD) available at www.dscc.dla.mil/programs/milspec/default.asp

SMD Part Number	ADI Equivalent
59628856501CA	OP470AYMDA
596288565012A	OP470ARCMDA
596288565013A*	OP470ATCMDA

*Not for new designs; obsolete April 2002.

Package Type	jA3	jc	Unit
14-Lead Hermetic DIP(Y)	94	10	∞C/W
14-Lead Plastic DiP(P)	76	33	∞C/W
16-Lead SOL (S)	88	23	∞C/W

NOTES

1Absolute Maximum Ratings apply to both DICE and packaged parts, unless otherwise noted.

2The OP470’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise performance. If differential voltage exceeds ±1.0 V, the input current should be limited to ±25 mA.

3 jA is specified for worst case mounting conditions, i.e., jA is specified for device in socket for TO, CerDIP, PDIP, packages; jA is specified for device soldered to printed circuit board for SO packages.

+IN B	V+	+IN A
ñIN B		ñIN A
OUT B		OUT A

OUT C		OUT D
		ñIN D
ñIN C +IN C	Vñ	+IN D

DIE SIZE 0.163 0.106 INCH, 17,278 SQ. mm (4.14 2.69 mm, 11.14 SQ. mm)

Figure 1. Dice Characteristics

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP470 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. A

–5–