Analog Devices OP249FZ, OP249GS, OP249GS-REEL7, OP249GS-REEL, OP249GP Datasheet

a Dual, Precision

JFET High-Speed Operational Amplifier

OP249

FEATURES

Fast Slew Rate: 22 V/ s Typ Settling Time (0.01%): 1.2 s Max Offset Voltage: 300 V Max

High Open-Loop Gain: 1000 V/mV Min Low Total Harmonic Distortion: 0.002% Typ

Improved Replacement for AD712, LT1057, OP215, TL072, and MC34082

APPLICATIONS

Output Amplifier for Fast D/As

Signal Processing

Instrumentation Amplifiers

Fast Sample/Holds

Active Filters

Low Distortion Audio Amplifiers

Input Buffer for A/D Converters

Servo Controllers

PIN CONNECTIONS

8-Lead Cerdip (Z Suffix),

8-Lead Plastic Mini-DIP

(P Suffix)

OUT A	1			8	V+
–IN A	2	A	B	7	OUT B
+IN A	3	– +	+ –	6	–IN B
V–	4			5	+IN B

8-Lead SO

(S Suffix)

+IN A	1		8	–IN A
V–	2	– A	7	OUT A
+IN B	3	+	6	V+
		+
–IN B	4	– B	5	OUT B

GENERAL DESCRIPTION

The OP249 is a high speed, precision dual JFET op amp, similar to the popular single op amp, the OP42. The OP249 outperforms available dual amplifiers by providing superior speed with excellent dc performance. Ultrahigh open-loop gain (1 kV/mV minimum), low offset voltage, and superb gain linearity makes the OP249 the industry’s first true precision, dual high speed amplifier.

With a slew rate of 22 V/µs typical and a fast settling time of less than 1.2 µs maximum to 0.01%, the OP249 is an ideal choice

for high speed bipolar D/A and A/D converter applications. The excellent dc performance of the OP249 allows the full accuracy of high resolution CMOS D/As to be realized.

Symmetrical slew rate, even when driving large load, such as, 600 Ω or 200 pF of capacitance and ultralow distortion, make the OP249 ideal for professional audio applications, active filters, high speed integrators, servo systems, and buffer amplifiers.

The OP249 provides significant performance upgrades to the TL072, AD712, OP215, MC34082, and the LT1057.

		0.010
		TA = 25 C
		VS = 15V
	870ns	VO = 10V p-p
		RL = 10k
100		AV = 1	100
90			90
10			10
0%
			0%
10mV	500ns		5V	1µs

	0.001
			100	1k	10k 20k
	20
Figure 1. Fast Settling (0.01%)	Figure 2. Low Distortion AV = 1,						Figure 3. Excellent Output Drive,
	RL = 10 kΩ						RL = 600 Ω

REV. E

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

OP249–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 15 V, TA = 25 C, unless otherwise noted.)

				OP249A			OP249F
Parameter	Symbol	Conditions	Min	Typ	Max	Min	Typ	Max	Unit
Offset Voltage	VOS			0.2	0.5		0.2	0.7	mV
Long Term Offset Voltage	VOS	(Note 1)			0.8			1.0	mV
Offset Stability		VCM = 0 V, TJ = 25°C		1.5			1.5		µV/Month
Input Bias Current	IB			30	75		30	75	pA
Input Offset Current	IOS	VCM = 0 V, TJ = 25°C		6	25		6	25	pA
Input Voltage Range	IVR	(Note 2)	±11	12.5		±11	12.5		V
									V
		VCM = ± 11 V		–12.5			–12.5		V
Common-Mode Rejection	CMR		80	90		80	90		dB
Power-Supply Rejection Ratio	PSRR	VS = ± 4.5 V to ±18 V		12	31.6		12	50	µV/V
Large-Signal Voltage Gain	AVO	VO = ±10 V, RL = 2 kΩ	1000	1400		500	1200		V/mV
Output Voltage Swing	VO	RL = 2 kΩ	±12.0	12.5		±12.0	12.5		V
									V
				–12.5			–12.5		V
Short-Circuit Current Limit	ISC	Output Shorted to	±20	36	±50	±20	36	±50	mA
		Ground							mA
				–33			–33		mA
Supply Current	ISY	No Load, VO = 0 V		5.6	7.0		5.6	7.0	mA
Slew Rate	SR	RL = 2 kΩ, CL = 50 pF	18	22		18	22		V/µs
Gain-Bandwidth Product	GBW	(Note 3)	3.5	4.7		3.5	4.7		MHz
Settling Time	tS	10 V Step 0.01%4		0.9	1.2		0.9	1.2	µs
Phase Margin	θ0	0 dB Gain		55			55		Degrees
Differential Input Impedance	ZIN			1012 6			1012 6		Ω pF
Open-Loop Output Resistance	RO			35			35		Ω
Voltage Noise	en p-p	0.1 Hz to 10 Hz		2			2		µV p-p
Voltage Noise Density	en	fO = 10 Hz		75			75		nV/√Hz
		fO = 100 Hz		26			26		nV/√Hz
		fO = 1 kHz		17			17		nV/√Hz
		fO = 10 kHz		16			16		nV/√Hz
Current Noise Density	in	fO = 1 kHz		0.003			0.003		pA/√Hz
Voltage Supply Range	VS		±4.5	± 15	±18	±4.5	±15	±18	V

NOTES

1Long-term offset voltage is guaranteed by a 1000 HR life test performed on three independent wafer lots at 125 °C with LTPD of three. 2Guaranteed by CMR test.

3Guaranteed by design.

4Settling time is sample tested.

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 15 V, TA = 25 C, unless otherwise noted.)

				OP249G
Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Offset Voltage	VOS	VCM = 0 V, TJ = 25°C		0.4	2.0	mV
Input Bias Current	IB			40	75	pA
Input Offset Current	IOS	VCM = 0 V, TJ = 25°C		10	25	pA
Input Voltage Range	IVR	(Note 1)	± 11	12.5		V
						V
		VCM = ± 11 V		–12.0		V
Common-Mode Rejection	CMR		76	90		dB
Power Supply Rejection Ratio	PSRR	VS = ±4.5 V to ± 18 V		12	50	µV/V
Large Signal Voltage Gain	AVO	VO = ± 10 V; RL = 2 kΩ	500	1100		V/mV
Output Voltage Swing	VO	RL = 2 kΩ	± 12.0	12.5		V
						V
				–12.5		V
Short-Circuit Current Limit	ISC	Output Shorted to Ground	± 20	36	± 50	mA
						mA
				–33		mA
Supply Current	ISY	No Load; VO = 0 V		5.6	7.0	mA
Slew Rate	SR	RL = 2 kΩ, CL = 50 pF	18	22		V/µs
Gain Bandwidth Product	GBW	(Note 2)		4.7		MHz
Settling Time	tS	10 V Step 0.01%		0.9	1.2	µs
Phase Margin	θ0	0 dB Gain		55		Degree
Differential Input Impedance	ZIN			1012 6		Ω pF

–2–

REV. E

						OP249
				OP249G
Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Open Loop Output Resistance	RO			35		Ω
Voltage Noise	en p-p	0.1 Hz to 10 Hz		2		µV p-p
Voltage Noise Density	en	fO = 10 Hz		75		nV/√Hz
		fO = 100 Hz		26		nV/√Hz
		fO = 1 kHz		17		nV/√Hz
		fO = 10 kHz		16		nV/√Hz
Current Noise Density	in	fO = 1 kHz		0.003		pA/√Hz
Voltage Supply Range	VS		± 4.5	± 15	± 18	V

NOTES

1Guaranteed by CMR test.

2Guaranteed by design.

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS

(@ VS = 15 V, –40 C ≤ TA ≤ +85 C for F grades and –55 C ≤ TA ≤ +125 C for A grade unless otherwise noted.)

					OP249A			OP249F
Parameter	Symbol		Conditions	Min	Typ	Max	Min	Typ	Max	Unit
Offset Voltage	VOS				0.12	1.0		0.5	1.1	mV
Offset Voltage Temperature										µV/°C
Coefficient	TCVOS				1	5		2.2	6
Input Bias Current	IB		(Note 1)		4	20		0.3	4.0	nA
Input Offset Current	IOS		(Note 1)		0.04	4		0.02	1.2	nA
Input Voltage Range	IVR		(Note 2)	± 11	12.5		± 11	12.5		V
										V
			VCM = ±11 V		–12.5			–12.5		V
Common-Mode Rejection	CMR			76	110		80	90		dB
Power-Supply Rejection Ratio	PSRR		VS = ±4.5 V to ± 18 V		5	50		7	100	µV/V
Large-Signal Voltage Gain	AVO		RL = 2 kΩ; VO = ±10 V	500	1400		250	1200		V/mV
Output Voltage Swing	VO		RL = 2 kΩ	± 12	12.5		± 12	12.5		V
										V
					–12.5			–12.5		V
Short-Circuit Current Limit	ISC		Output Shorted to	± 10		± 60	± 18		± 60
			Ground							mA
Supply Current	ISY		No Load, VO = 0 V		5.6	7.0		5.6	7.0	mA
NOTES
1TJ = 85°C for F Grades; TJ = 125°C for A Grade.
2Guaranteed by CMR test.
Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS			(@ VS = 15 V, –40 C ≤ TA ≤ +85 C for unless otherwise noted.)
					OP249G
Parameter	Symbol		Conditions	Min	Typ	Max	Unit
Offset Voltage	VOS				1.0	3.6	mV
Offset Voltage Temperature							µV/°C
Coefficient	TCVOS				6	25
Input Bias Current	IB		(Note 1)		0.5	4.5	nA
Input Offset Current	IOS		(Note 1)		0.04	1.5	nA
Input Voltage Range	IVR		(Note 2)	± 11	12.5		V
							V
			VCM = ±11 V		–12.5		V
Common-Mode Rejection	CMR			76	95		dB
Power-Supply Rejection Ratio	PSRR		VS = ±4.5 V to ± 18 V		10	100	µV/V
Large-Signal Voltage Gain	AVO		RL = 2 kΩ; VO = ± 10 V	250	1200		V/mV
Output Voltage Swing	VO		RL = 2 kΩ	± 12.0	12.5		V
							V
				± 18	–12.5	± 60	V
Short-Circuit Current Limit	ISC		Output Shorted to Ground				mA
Supply Current	ISY		No Load, VO = 0 V		5.6	7.0	mA

NOTES 1TJ = 85°C.

2Guaranteed by CMR test.

Specifications subject to change without notice.

REV. E

–3–

OP249

ABSOLUTE MAXIMUM RATINGS1	± 18
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . .		V
Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . ± 18	V
Differential Input Voltage2 . . . . . . . . . . . . . .	. . . . . . . . . 36	V
Output Short-Circuit Duration . . . . . . . . . . .	. . . . . Indefinite
Storage Temperature Range . . . . . . . . . . . .	–65°C to +175°C
Operating Temperature Range	–55°C to +125°C
OP249A (Z) . . . . . . . . . . . . . . . . . . . . . . .
OP249E, F (Z) . . . . . . . . . . . . . . . . . . . . .	–40°C to +85°C
OP249G (P, S) . . . . . . . . . . . . . . . . . . . . .	–40°C to +85°C
Junction Temperature	–65°C to +175°C
OP249 (Z) . . . . . . . . . . . . . . . . . . . . . . . .
OP249 (P, S) . . . . . . . . . . . . . . . . . . . . . .	–65°C to +150°C
Lead Temperature Range (Soldering, 60 sec)	. . . . . . . 300°C

Package Type	JA3	JC	Unit
8-Lead Hermetic DIP (Z)	134	12	°C/W
8-Lead Plastic DIP (P)	96	37	°C/W
8-Lead SO (S)	150	41	°C/W

NOTES

1Absolute maximum ratings apply to packaged parts, unless otherwise noted. 2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal

to the supply voltage.

3θJA is specified for worst-case mounting conditions, i.e., θJA is specified for device in socket for cerdip and P-DIP packages; θJA is specified for device soldered to printed circuit board for SO package.

ORDERING GUIDE*

Model	Temperature Range	Package Descriptions	Package Options
OP249AZ	–55°C to +125°C	8-Lead Cerdip	Q-8
OP249FZ	–40°C to +85°C	8-Lead Cerdip	Q-8
OP249GP	–40°C to +85°C	8-Lead Plastic DIP	N-8
OP249GS*	–40°C to +85°C	8-Lead SO	SO-8
OP249GS-REEL	–40°C to +85°C	8-Lead SO	SO-8
OP249GS-REEL7	–40°C to +85°C	8-Lead SO	SO-8

NOTES

*For availability and burn-in information on SO and PLCC packages, contact your local sales office.

For Military processed devices, please refer to the Standard Microcircuit Drawing (SMD) available at www.dscc.dla.mil/programs/milspec/default.asp

SMD Part Number	ADI Equivalent
5962-9151901M2A	OP249ARCMDA
5962-9151901MGA	OP249AJMDA
5962-9151901MPA	OP249AZMDA

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP249 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. E

Typical Performance Characteristics–OP249

	120							65								10		140
	100	TA = 25 C							VS = 15V							–MHz	– dB		TA = 25 C
																		120
		VS = 15V						60											VS = 15V
OPEN-LOOP GAIN – dB	80	RL = 2k				0										8	COMMON-MODE REJECTION	100
	60	GAIN				45								m				80
								55								6
	40					90								GBW				60
		PHASE			m = 55
	20
						135		50								4		40
	0					180	MARGINPHASEC–									PRODUCTBANDWIDTHGAIN		20
						PHASEC–
	–20					225		45								2		0
	1k	10k	100k	1M	10M	100M		–75	–50	–25	0	25	50	75	100	125		100	1k	10k	100k	1M	10M
		FREQUENCY – Hz								TEMPERATURE – C									FREQUENCY – Hz

TPC 1. Open-Loop Gain, Phase vs. Frequency

	120
dB					TA = 25 C
	100				VS = 15V
–
REJECTION	80
	60				+PSRR
SUPPLY
				–PSRR
	40
POWER	20
	0			10k	100k	1M
	10	100	1k
			FREQUENCY – Hz

TPC 2. Gain Bandwidth Product, Phase Margin vs. Temperature

	28
		VS = 15V
	26	RL = 2k
		CL = 50pF
s
V/	24			–SR
–
RATE	22		+SR
SLEW	20
	18
	16	–50 –25	0	25	50	75	100	125
	–75
		TEMPERATURE – C

TPC 3. Common-Mode Rejection vs.

Frequency
	28
		TA = 25 C
	26	VS = 15V
		RL = 2k
s
V/	24
–
RATE	22
SLEW	20
	18
	16	0.2	0.4	0.6	0.8	1.0
	0
		DIFFERENTIAL INPUT VOLTAGE – Volts

TPC 4. Power Supply Rejection vs.

Frequency
	35
		TA = 25 C
	30	VS = 15V
s	25	NEGATIVE
V/
–
RATE	20	POSITIVE
SLEW	15
	10
	5	100	200	300	400	500
	0
		CAPACITIVE LOAD – pF

TPC 7. Slew Rate vs. Capacitive Load

TPC 5. Slew Rate vs. Temperature	TPC 6. Slew Rate vs. Differential
	Input Voltage

	10	TA = 25 C
	8
		VS = 15V	0.1%
Volts	6	AVCL = 1
	4
–
				0.01%
SIZE	2
STEP	0
	–2			0.01%
OUTPUT
	–4
	–6		0.1%
	–8
	–10	200	400	600	800	1000
	0
		SETTLING TIME – ns

TPC 8. Settling Time vs. Step Size

	100
Hz		TA = 25 C
nV	80	VS = 15V
–
DENSITY	60
NOISE	40
VOLTAGE	20
	0
	0	100	1k	10k
		FREQUENCY – Hz

TPC 9. Voltage Noise Density vs. Frequency

REV. E

–5–