Analog Devices OP184, OP484, OP284 Datasheet

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a		Precision Rail-to-Rail Input & Output
a		Operational Amplifiers

		OP184/OP284/OP484

FEATURES

Single-Supply Operation

Wide Bandwidth: 4 MHz

Low Offset Voltage: 65 mV

Unity-Gain Stable

High Slew Rate: 4.0 V/ms

Low Noise: 3.9 nV/ÖHz

PIN CONFIGURATIONS

8-Lead Epoxy DIP

(P Suffix)

8-Lead SO

(S Suffix)

APPLICATIONS

Battery Powered Instrumentation

Power Supply Control and Protection

Telecom

DAC Output Amplifier

ADC Input Buffer

NULL	1	OP184	8	NC
–IN A	2		7	V+
+IN A	3		6	OUT A
V–	4		5	NULL
		NC = NO CONNECT

GENERAL DESCRIPTION

The OP184/OP284/OP484 are single, dual and quad singlesupply, 4 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. They are guaranteed to operate from +3 to +36 (or

±1.5 to ±18) volts and will function with a single supply as low as +1.5 volts.

These amplifiers are superb for single supply applications requiring both ac and precision dc performance. The combination of bandwidth, low noise and precision makes the OP184/OP284/ OP484 useful in a wide variety of applications, including filters and instrumentation.

Other applications for these amplifiers include portable telecom equipment, power supply control and protection, and as amplifiers or buffers for transducers with wide output ranges. Sensors requiring a rail-to-rail input amplifier include Hall effect, piezo electric, and resistive transducers.

The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and to maintain high signal-to-noise ratios.

The OP184/OP284/OP484 are specified over the HOT extended industrial (–40°C to +125°C) temperature range. The single and dual are available in 8-pin plastic DIP plus SO surface mount packages. The quad OP484 is available in 14-pin plastic DIPs and 14-lead narrow-body SO packages.

8-Lead Epoxy DIP

(P Suffix)

8-Lead SO

(S Suffix)

OUT A	1	OP284	8	V+
–IN A	2		7	OUT B
+IN A	3		6	–IN B
V–	4		5	+IN B

14-Lead Epoxy DIP

(P Suffix)

14-Lead Narrow-Body SO

(S Suffix)

OUT A	1		14	OUT D
–IN A	2		13	–IN D
+IN A	3		12	+IN D
V+	4	OP484	11	V–
+IN B	5		10	+IN C
–IN B	6		9	–IN C
OUT B	7		8	OUT C

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 617/329-4700	World Wide Web Site: http://www.analog.com
Fax: 617/326-8703	© Analog Devices, Inc., 1996

OP184/OP284/OP484–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = +5.0 V, VCM = 2.5 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Units

INPUT CHARACTERISTICS						mV
Offset Voltage “OP184/284E” Grade	VOS	(Note 1)			65	mV
		–40°C £ TA £ +125°C			165	mV
Offset Voltage “OP184/284F” Grade	VOS	–40°C £ TA £ +125°C			125	mV
		–40°C £ TA £ +125°C			350	mV
Offset Voltage “OP484E” Grade	VOS	–40°C £ TA £ +125°C			75	mV
		–40°C £ TA £ +125°C			175	mV
Offset Voltage “OP484F” Grade	VOS	–40°C £ TA £ +125°C			150	mV
Input Bias Current	IB	–40°C £ TA £ +125°C			450	mV
Input Bias Current	IB	–40°C £ TA £ +125°C		60	350	nA
Input Offset Current	IOS	–40°C £ TA £ +125°C			575	nA
Input Offset Current	IOS	–40°C £ TA £ +125°C		2	50	nA
		–40°C £ TA £ +125°C			50	nA
Input Voltage Range			0		+5	V
Common-Mode Rejection Ratio	CMRR	VCM = 0 V to 5 V	60			dB
Common-Mode Rejection Ratio	CMRR	VCM = 1.0 V to 4.0 V, –40°C £ TA £ +125°C	86			dB
Large Signal Voltage Gain	AVO	RL = 2 kW, 1 V £ VO £ 4 V	50	240		V/mV
		RL = 2 kW, –40°C £ TA £ +125°C	25			V/mV
Bias Current Drift	DIB/DT			150		pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High	VOH	IL = 1.0 mA	+4.85			V
Output Voltage Low	VOL	IL = 1.0 mA	±6.5		125	mV
Output Current	IOUT		±6.5			mA
POWER SUPPLY		VS = +2.0 V to +10 V, –40°C £ TA £ +125°C
Power Supply Rejection Ratio	PSRR	VS = +2.0 V to +10 V, –40°C £ TA £ +125°C	76			dB
Supply Current/Amplifier	ISY	VO = 2.5 V, –40°C £ TA £ +125°C			1.45	mA
Supply Voltage Range	VS		+3		+36	V
DYNAMIC PERFORMANCE		RL = 2 kW				V/ms
Slew Rate	SR	RL = 2 kW	1.65	2.4		V/ms
Settling Time	ts	To 0.01%, 1.0 V Step		2.5		ms
Gain Bandwidth Product	GBP			3.25		MHz
Phase Margin	Øo			45		Degrees

NOISE PERFORMANCE						mV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		0.3		mV p-p
Voltage Noise Density	en	f = 1 kHz		3.9		nV/Ö		Hz
Current Noise Density	in			0.4		pA/Ö	Hz

NOTES

1Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Specifications subject to change without notice.

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OP184/OP284/OP484

ELECTRICAL CHARACTERISTICS (@ VS = +3.0 V, VCM = 1.5 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions		Min Typ	Max	Units

INPUT CHARACTERISTICS						mV
Offset Voltage “OP184/284E” Grade	VOS	(Note 1)			65	mV
		–40°C £ TA £ +125°C			165	mV
Offset Voltage “OP184/284F” Grade	VOS	–40°C £ TA £ +125°C			125	mV
		–40°C £ TA £ +125°C			350	mV
Offset Voltage “OP484E” Grade	VOS	–40°C £ TA £ +125°C			100	mV
		–40°C £ TA £ +125°C			200	mV
Offset Voltage “OP484F” Grade	VOS	–40°C £ TA £ +125°C			150	mV
Input Bias Current	IB	–40°C £ TA £ +125°C			450	mV
Input Bias Current	IB	–40°C £ TA	£ +125°C	60	350	nA
		–40°C £ TA	£ +125°C		575	nA
Input Offset Current	IOS	–40°C £ TA	£ +125°C		50	nA
Input Voltage Range				0	+3	V
Common-Mode Rejection Ratio	CMRR	VCM = 0 V to 3 V		60		dB
Common-Mode Rejection Ratio	CMRR	VCM = 0 V to 3 V, –40°C £ TA £ +125°C		56		dB
OUTPUT CHARACTERISTICS
Output Voltage High	VOH	IL = 1.0 mA		+2.85		V
Output Voltage Low	VOL	IL = 1.0 mA			125	mV
POWER SUPPLY		VS = ±1.25 V to ± 1.75 V
Power Supply Rejection Ratio	PSRR	VS = ±1.25 V to ± 1.75 V		76		dB
Supply Current/Amplifier	ISY	VO = 1.5 V, –40°C £ TA £ +125°C			1.35	mA
DYNAMIC PERFORMANCE
Gain Bandwidth Product	GBP			3		MHz

NOISE PERFORMANCE						nV/Ö
Voltage Noise Density	en	f = 1 kHz		3.9		nV/Ö	Hz

NOTES

1Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Specifications subject to change without notice.

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OP184/OP284/OP484

ELECTRICAL CHARACTERISTICS (@ VS = 615.0 V, VCM = 0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions			Min	Typ	Max	Units
INPUT CHARACTERISTICS		(Note 1)					100	mV
Offset Voltage “OP184/284E” Grade	VOS	(Note 1)					100	mV
		–40°C £ TA £ +125°C					200	mV
Offset Voltage “OP284F” Grade	VOS						175	mV
		–40°C £ TA £ +125°C					375	mV
Offset Voltage “OP484E” Grade	VOS	–40°C £ TA £ +125°C					150	mV
		–40°C £ TA £ +125°C					300	mV
Offset Voltage “OP484F” Grade	VOS	–40°C £ TA £ +125°C					250	mV
		–40°C £ TA £ +125°C					500	mV
Input Bias Current	IB	–40°C £ TA	£ +125°C			80	350	nA
		–40°C £ TA	£ +125°C				575	nA
Input Offset Current	IOS	–40°C £ TA	£ +125°C				50	nA
Input Voltage Range		VCM = –14.0 V to +14.0 V, –40°C £ TA £ +125°C			–15		+15	V
Common-Mode Rejection Ratio	CMRR	VCM = –14.0 V to +14.0 V, –40°C £ TA £ +125°C			86	90		dB
Common-Mode Rejection Ratio	CMRR	VCM = –15.0 V to +15.0 V			80			dB
Large Signal Voltage Gain	AVO	RL = 2 kW, –10 V £ VO		£ 10 V	150	1000		V/mV
	DVOS/DT	RL = 2 kW, –40°C £ TA		£ +125°C	75			V/mV
Offset Voltage Drift “E” Grade	DVOS/DT					0.2	2.00	mV/°C
Bias Current Drift	DIB/DT					150		pA/°C
OUTPUT CHARACTERISTICS		IL = 1.0 mA			+14.8			V
Output Voltage High	VOH	IL = 1.0 mA			+14.8			V
Output Voltage Low	VOL	IL = 1.0 mA			± 10		–14.875	V
Output Current	IOUT				± 10			mA
POWER SUPPLY		VS = ±2.0 V to ± 18 V, –40°C £ TA £ +125°C
Power Supply Rejection Ratio	PSRR	VS = ±2.0 V to ± 18 V, –40°C £ TA £ +125°C			90			dB
Supply Current/Amplifier	ISY	VO = 0 V, –40°C £ TA £ +125°C					2.0	mA
Supply Current/Amplifier	ISY	VS = ± 18 V, –40°C £ TA £ +125°C					2.25	mA
DYNAMIC PERFORMANCE		RL = 2 kW			2.4	4.0		V/ms
Slew Rate	SR	RL = 2 kW			2.4	4.0		V/ms
Full-Power Bandwidth	BWp	1% Distortion, RL = 2 kW, VO = 29 V p-p				35		kHz
Settling Time	tS	To 0.01%, 10 V Step				4		ms
Gain Bandwidth Product	GBP					4.25		MHz
Phase Margin	Øo					50		Degrees

NOISE PERFORMANCE	en p-p	0.1 Hz to 10 Hz				0.3		mV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz				0.3		mV p-p
Voltage Noise Density	en	f = 1 kHz				3.9		nV/Ö	Hz
Current Noise Density	in					0.4		pA/ÖHz

NOTES

1Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. Specifications subject to change without notice.

WAFER TEST LIMITS (@ VS = +5.0 V, VCM = 2.5 V, TA = +258C unless otherwise noted)

Parameter		Symbol	Conditions	Limit	Units

Offset Voltage	OP284	VOS		65	mV max
Offset Voltage	OP484	VOS		75	mV max
Input Bias Current		IB		350	nA max
Input Offset Current		IOS		50	nA max
Input Voltage Range		VCM		V– to V+	V min
Common-Mode Rejection Ratio		CMRR	VCM = +1 V to +4 V	86	dB min
Power Supply Rejection Ratio		PSRR	VS = ±2 V to ± 18 V	90	dB min
Large Signal Voltage Gain		AVO	RL = 2 kW	50	V/mV min
Output Voltage High		VOH	IL = 1.0 mA	4.85	V min
Output Voltage Low		VOL	IL = 1.0 mA	125	mV max
Supply Current/Amplifier		ISY	VO = 0 V, RL = ¥	1.45	mA max

NOTE

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

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Analog Devices OP184, OP484, OP284 Datasheet

OP184/OP284/OP484

ABSOLUTE MAXIMUM RATINGS1				±18 V
Supply Voltage . . . . . . . . . . .	. . . . . . . .	. . . .	. . . . .	±18 V
Input Voltage . . . . . . . . . . . . .	. . . . . . .	. . . .	. . . . .	. . . . ±18 V
Differential Input Voltage2 . .	. . . . . . .	. . . .	. . . . .	. . . ±0.6 V
Output Short-Circuit Duration to GND3 . .			. . . . .	. Indefinite
Storage Temperature Range			–65°C to +150°C
P, S Packages . . . . . . . . . . .	. . . . . . .	. . . .	–65°C to +150°C
Operating Temperature Range			–40°C to +125°C
OP184/OP284/OP484E, F .	. . . . . . .	. . . .	–40°C to +125°C
Junction Temperature Range			–65°C to +150°C
P, S Packages . . . . . . . . . . .	. . . . . . .	. . . .	–65°C to +150°C
Lead Temperature Range (Soldering 60 sec)			. . . . .	. . . +300°C

Package Type	uJA3		uJC	Units
8-Pin Plastic DIP (P)	103		43	°C/W
8-Pin SOIC (S)	158		43	°C/W
14-Pin Plastic DIP (P)	83		39	°C/W
14-Pin SOIC (S)	92		27	°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts unless otherwise noted.

2For input voltages greater than 0.6 volts, the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices.

3θJA is specified for the worst case conditions; i.e., θJA is specified for device in socket for cerdip and P-DIP packages; θJA is specified for device soldered in circuit board for SOIC package.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option

OP184EP	–40°C to +125°C	8-Pin Plastic DIP	N-8
OP184ES	–40°C to +125°C	8-Pin SOIC	SO-8
OP184FP	–40°C to +125°C	8-Pin Plastic DIP	N-8
OP184FS	–40°C to +125°C	8-Pin SOIC	SO-8
OP284EP	–40°C to +125°C	8-Pin Plastic DIP	N-8
OP284ES	–40°C to +125°C	8-Pin SOIC	SO-8
OP284FP	–40°C to +125°C	8-Pin Plastic DIP	N-8
OP284FS	–40°C to +125°C	8-Pin SOIC	SO-8
OP484EP	–40°C to +125°C	14-Pin Plastic DIP	N-14
OP484ES	–40°C to +125°C	14-Pin SOIC	SO-14
OP484FP	–40°C to +125°C	14-Pin Plastic DIP	N-14
OP484FS	–40°C to +125°C	14-Pin SOIC	SO-14

OP284 Die Size 0.065 × 0.092 Inch, 5,980 Sq. Mils Substrate (Die Backside) Is Connected to V–. Transistor Count, 62.

OP484 Die Size 0.080 × 0.110 Inch, 8,800 Sq. Mils Substrate (Die Backside) Is Connected to V–. Transistor Count, 120.

VCC

RB1

QB6

QB5

RB3

RB4

R11

Q11

Q12

Q16

Q17

JB1

QL1

QB9

QB10

–IN

+IN

Q10

CC2

OUT

QL2

C FF

C O

QB2

CB1 N+

QB3

Q18

M P+

RB2

QB4

Q14

Q15

QB7

Q13

QB1

QB8

JB2

CC1

R10

VEE

Figure 1. Simplified Schematic

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–5–

OP184/OP284/OP484–Typical Performance Characteristics

300

270	VS	= +3V
270	VS	= +3V
240	TA = +25°C
	TA = +25°C
	VCM = 1.5V
210	VCM = 1.5V
210
QUANTITY 120
180
150
90



60
60
30
0
–100	–75		–50	–25	0	25	50	75	100
		INPUT OFFSET VOLTAGE – µV

Figure 2. Input Offset Voltage

Distribution

300
270	VS	= +5V
270	VS	= +5V
240	TA = +25°C
240	VCM = 2.5V
	VCM = 2.5V
210
QUANTITY 120
180
180
150
150
90


60


30


0


			–50	–25	0	25	50	75
–100	–75		–50	–25	0	25	50	75	100
		INPUT OFFSET VOLTAGE – µV

Figure 3. Input Offset Voltage

Distribution

300

250			VS	= +5V		≤ +125°C
250			–40°C ≤ TA
			–40°C ≤ TA
200
200
QUANTITY
QUANTITY
150
150
100
100
50


0



	0.25	0.50	0.75		1.0	1.25	1.5
0	0.25	0.50	0.75		1.0	1.25	1.5
	OFFSET VOLTAGE DRIFT, TCVOS – µV/ °C

Figure 5. Input Offset Voltage Drift

Distribution

300

250 VS = ±15V

–40°C ≤ TA ≤ +125°C

QUANTITY	200
	200
	150


	100


	50
	50
	0



		0.25	0.50	0.75	1.0	1.25	1.5
	0	0.25	0.50	0.75	1.0	1.25	1.5

OFFSET VOLTAGE DRIFT, TCVOS – µV/ °C

Figure 6. Input Offset Voltage Drift

Distribution

	500
	500

	400					VS = ±15V
	400					VS = ±15V
– nA	300
	300
	200
	200
CURRENT	100
	100
	0
	0
BIAS	–100
	–100
	–200

INPUT
INPUT	–300
	–300
	–400
	–400
	–500
	–500
	–15	–10	–5	0	5	10	15

COMMON MODE VOLTAGE – Volts

Figure 8. Input Bias Current vs. Common-Mode Voltage

1,000
	VS = ±15V
mV			SOURCE
–
VOLTAGEOUTPUT	100		SINK
	100		SINK
	10
	0.01	0.1	1	10

LOAD CURRENT – mA

Figure 9. Output Voltage to Supply Rail vs. Load Current

200

–40

175

VS = ±15V

–45

150

TA = +25°C

–50

VCM = VS/ 2

–

VS = +5V

QUANTITY

125

CURRENTBIAS

–55

100

–60

INPUT

–65

–70

–75

VS = ±15V

–80

–125 –100 –75 –50 –25

100 125

–40

125

INPUT OFFSET VOLTAGE – µV

TEMPERATURE – °C

Figure 4. Input Offset Voltage	Figure 7. Bias Current vs.
Distribution	Temperature

	1.2
mA	1.1
–	1.1
–			VS = ±15V
CURRENT/AMPLIFIER	1.0		VS = ±15V
	1.0
	0.9
	0.8		VS = +5V
			VS = +5V
	0.7
SUPPLY	0.7
	0.6		VS = +3V
	0.6

	0.5
	–40	25	85	125
		TEMPERATURE – °C

Figure 10. Supply Current vs. Temperature

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