Analog Devices SSM2275S, SSM2275RU, SSM2275RM, SSM2275P Datasheet

a		Rail-to-Rail Output
		Audio Amplifiers
		SSM2275/SSM2475*

FEATURES

Single or Dual-Supply Operation

Excellent Sonic Characteristics

Low Noise: 7 nV/√Hz

Low THD: 0.0006%

Rail-to-Rail Output

High Output Current: 650 mA

Low Supply Current: 1.7 mA/Amplifier

Wide Bandwidth: 8 MHz

High Slew Rate: 12 V/ms

No Phase Reversal

Unity Gain Stable

Stable Parameters Over Temperature

APPLICATIONS

Multimedia Audio

Professional Audio Systems

High Performance Consumer Audio

Microphone Preamplifier

MIDI Instruments

GENERAL DESCRIPTION

The SSM2275 and SSM2475 use the Butler Amplifier front end, which combines both bipolar and FET transistors to offer the accuracy and low noise performance of bipolar transistors and the slew rates and sound quality of FETs. This product family includes dual and quad rail-to-rail output audio amplifiers that achieve lower production costs than the industry standard OP275 (the first Butler Amplifier offered by Analog Devices). This lower cost amplifier also offers operation from a single 5 V supply, in addition to conventional ±15 V supplies. The ac performance meets the needs of the most demanding audio applications, with 8 MHz bandwidth, 12 V/ s slew rate and extremely low distortion.

The SSM2275 and SSM2475 are ideal for application in high performance audio amplifiers, recording equipment, synthesizers, MIDI instruments and computer sound cards. Where cascaded stages demand low noise and predictable performance, SSM2275 and SSM2475 are a cost effective solution. Both are stable even when driving capacitive loads.

PIN CONFIGURATIONS

8-Lead Narrow Body SOIC

14-Lead Narrow Body SOIC

(SO-8)

(R-14)

OUT A

1

8

V+

OUT A

1

14

OUT D

–IN A

2

SSM2275

7

OUT B

–IN A

2

13

–IN D

(Not to Scale)

+IN A

3

12

+IN D

+IN A

3

6

–IN B

SSM2475

V–

V+

4

(Not to Scale)

11

V–

4

5

+IN B

+IN C

+IN B

5

10

–IN B

6

9

–IN C

OUT B

7

8

OUT C

8-Lead microSOIC

14-Lead TSSOP

(RM-8)

(RU-14)

OUT A

OUT D

OUT A

1

8

V+

1

14

–IN A

SSM2275

OUT B

–IN A

–IN D

+IN A

–IN B

+IN A

SSM2475

+IN D

V–

4

5

+IN B

V+

V–

+IN B

+IN C

–IN B

–IN C

OUT B

7

8

OUT C

8-Lead Plastic DIP

	(N-8)
OUT A 1	(Not to	8	V+
	Scale)
–IN A 2		7	OUT B
+IN A 3		6	–IN B
V– 4	SSM2275	5	+IN B

The ability to swing rail-to-rail at the outputs (see Applications section) and operate from low supply voltages enables designers to attain high quality audio performance, even in single supply systems. The SSM2275 and SSM2475 are specified over the extended industrial (–40°C to +85°C) temperature range. The SSM2275 is available in 8-lead plastic DIPs, SOICs, and microSOIC surfacemount packages. The SSM2475 is available in narrow body SOICs and thin shrink small outline (TSSOP) surface-mount packages.

*Protected by U.S. Patent No. 5,101,126.

REV. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 1999

SSM2275/SSM2475–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (VS = 615 V, TA = 1258C, VCM = 0 V unless otherwise noted)

Parameter	Symbol	Conditions		Min	Typ	Max	Units
INPUT CHARACTERISTICS
Offset Voltage	VOS	–40°C ≤ TA ≤ +85°C			1	4	mV
					1	6	mV
Input Bias Current	IB	–40°C ≤ TA ≤ +85°C			250	400	nA
					300	500	nA
Input Offset Current	IOS	–40°C ≤ TA ≤ +85°C			5	75	nA
					15	125	nA
Input Voltage Range	VIN	VS = ± 15 V		–14		+14	V
Common-Mode Rejection Ratio	CMRR	–12.5 V ≤ VCM ≤ +12.5 V		80	100		dB
		–40°C ≤ TA ≤ +85°C,
		–12.5 V ≤ VCM ≤ +12.5 V		80	100		V/mV
AVO		RL = 2 kΩ, –12 V ≤ VO ≤ +12 V		100	240		V/mV
		–40°C ≤ TA ≤ +85°C		80	120		V/mV
OUTPUT CHARACTERISTICS		IL ≤ 20 mA
Output Voltage, High	VOH			14	14.5		V
		–40°C ≤ TA ≤ +85°C		14.5	14.7		V
Output Voltage, Low	VOL	IL = 20 mA			–14	–13.5	V
		IL = 10 mA			–14.6	–14.4	V
		IL = 10 mA, –40°C ≤ TA ≤ +85°C			–14.3	–13.9	V
Output Short Circuit Current Limit	ISC			± 25	± 50	± 75	mA
		–40°C ≤ TA ≤ +85°C		± 17	± 40	± 80	mA
POWER SUPPLY		± 2.5 V ≤ VS	≤ ±18 V
Power Supply Rejection Ratio	PSRR			85	110		dB
		–40°C ≤ TA	≤ +85°C	80	105		dB
Supply Current/Amplifier	ISY	VO = 0 V			1.7	2.9	mA
		–40°C ≤ TA ≤ +85°C			1.75	3.0	mA
DYNAMIC PERFORMANCE		RL = 10 kΩ, f = 1 kHz, VO = 1 V rms
Total Harmonic Distortion	THD				0.0006		%
Slew Rate	SR	RL = 2 kΩi50 pF		9	12		V/µs
Gain Bandwidth Product	GBW	RL = 2 kΩ, f =1 kHz			8		MHz
Channel Separation	CS				128		dB
NOISE PERFORMANCE							nV/ÖHz
Voltage Noise Spectral Density	en	f > 1 kHz			8
Current Noise Spectral Density	in	f > 1 kHz			< 1		pA/ÖHz

Specifications subject to change without notice.

–2–

REV. A

SSM2275/SSM2475

ELECTRICAL CHARACTERISTICS (VS = 15 V, TA = 1258C, VCM = 2.5 V unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Units
INPUT CHARACTERISTICS
Offset Voltage	VOS	–40°C ≤ TA ≤ +85°C		1	4	mV
				1	6	mV
Input Bias Current	IB	–40°C ≤ TA ≤ +85°C		250	400	nA
				300	500	nA
Input Offset Current	IOS	–40°C ≤ TA ≤ +85°C		5	75	nA
				15	125	nA
Input Voltage Range	VIN	+0.8 V ≤ VCM ≤ +2 V	0.3		4.7	V
Common-Mode Rejection Ratio	CMRR			85		dB
		–40°C ≤ TA ≤ +85°C		80		dB
AVO		RL = 2 kΩ, –0.5 V ≤ VO ≤ +4.5 V	25	60		V/mV
		–40°C ≤ TA ≤ +85°C	20	50		V/mV
OUTPUT CHARACTERISTICS		IL ≤ –15 mA
Output Voltage, High	VOH		4.2	4.5		V
		IL ≤ –10 mA, –40°C ≤ TA ≤ +85°C	4.5	4.8		V
Output Voltage, Low	VOL	IL ≤ –15 mA		0.6	1.0	V
		IL ≤ –10 mA		0.3	0.5	V
		IL ≤ –10 mA, –40°C ≤ TA ≤ +85°C		0.7	1.1	V
Output Short Circuit Current Limit	ISC	–40°C ≤ TA ≤ +85°C		40		mA
POWER SUPPLY
Supply Current/Amplifier	ISY	VO = 0 V		1.7	2.9	mA
		–40°C ≤ TA ≤ +85°C		1.75	3.0	mA
DYNAMIC PERFORMANCE		RL = 10 kΩ, f = 1 kHz, VO = 1 V rms
Total Harmonic Distortion	THD			0.0006		%
Slew Rate	SR	RL = 2 kΩi50 pF		12		V/µs
Gain Bandwidth Product	GBW	RL = 2 kΩi10 pF		6		MHz
Channel Separation	CS	RL = 2 kΩ, f =1 kHz		128		dB
NOISE PERFORMANCE						nV/ÖHz
Voltage Noise Spectral Density	en	f > 1 kHz		8
Current Noise Spectral Density	in	f > 1 kHz		< 1		pA/ÖHz

Specifications subject to change without notice.

REV. A

–3–

SSM2275/SSM2475

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Input Voltage (VIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ±15 V

Storage Temperature Range . . . . . . . . . . . . 265°C to 1150°C Operating Temperature Range . . . . . . . . . . . 240°C to 185°C Junction Temperature Range . . . . . . . . . . . . 265°C to 1150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . 1300°C ESD Susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2,000 V

NOTES

1Stresses above those listed under Absolute Maximum Ratings may cause perma - nent damage to the device. This is a stress rating only; the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

2For supplies less than ± 15 V, the input voltage and differential input voltage must be less than ±15 V.

Package Type	uJA*	uJC	Units
8-Lead Plastic DIP	103	43	°C/W
8-Lead SOIC	158	43	°C/W
8-Lead microSOIC	206	43	°C/W
14-Lead SOIC	120	36	°C/W
14-Lead TSSOP	180	35	°C/W

*qJA is specified for the worst case conditions, i.e., for device in socket for DIP packages and soldered onto a circuit board for surface mount packages.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Options
SSM2275P	–40°C to +85°C	8-Lead PDIP	N-8
SSM2275S	–40°C to +85°C	8-Lead SOIC	SO-8
SSM2275RM	–40°C to +85°C	8-Lead microSOIC	RM-8
SSM2475S	–40°C to +85°C	14-Lead SOIC	R-14
SSM2475RU	–40°C to +85°C	14-Lead TSSOP	RU-14

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the SSM2275/SSM2475 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

	100																																			225
																												VS = 62.5V
	80																											RL = 2kV								180
																												CL = 10pF
dB–	60																																			135	Degrees
	40																																			90
GAIN																																					PHASE–
	20																																			45
	0																																			0
	–20																																			–45
	–40																																			–90
			100								1k				10k					100k					1M						10M
	10																																	40M

FREQUENCY – Hz

Figure 1. Phase/Gain vs. Frequency

	100																																			225
																												VS = 62.5V
	80																											RL = 600V								180
																												CL = 10pF
dB–	60																																			135	Degrees
	40																																			90
GAIN																																					PHASE–
	20																																			45
	0																																			0
	–20																																			–45
	–40																																			–90
			100							1k					10k					100k					1M						10M
	10																																		40M

FREQUENCY – Hz

Figure 2. Phase/Gain vs. Frequency

–4–

REV. A

Typical Characteristics–SSM2275/SSM2475

	100																																			225
																												VS = 615V
	80																											RL = 2kV								180
																												CL = 10pF
dB–	60																																			135	Degrees
	40																																			90
GAIN																																					PHASE–
	20																																			45
	0																																			0
	–20																																			–45
	–40																																			–90
			100							1k					10k					100k					1M						10M
	10																																		40M

FREQUENCY – Hz

Figure 3. Phase/Gain vs. Frequency

	100							225
							VS = 615V
	80						RL = 600V	180
							CL = 10pF
	60							135
– dB	40							90	Degrees
GAIN	20							45	PHASE –
	0							0
	–20							–45
	–40	100	1k	10k	100k	1M	10M	–90
	10							40M

FREQUENCY – Hz

Figure 4. Phase/Gain vs. Frequency

2.0 VS = 615V 1.8 TA = 1258C

	Hz
	pA/–	1.6
	DENSITY	1.4
		1.2
	NOISE	1.0
	CURRENT	0.8
		0.6

0.4

0.2

10	100	1k	10k
		FREQUENCY – Hz

Figure 5. SSM2275 Current Noise Density vs. Frequency

	60
			VS	= 6	15V
			TA = 1258C
nV/ Hz	50
	40
–
DENSITY	30
NOISE	20
VOLTAGE
	10
	0
			100										1k					10k				100k
	10

FREQUENCY – Hz

Figure 6. SSM2275 Voltage Noise Density (Typical)

140

V

S

=

615V

– dB

120

TA = 1258C

REJECTION

100

MODE

80

60

COMMON

40

20

0

1k

10k

1M

10M

30M

100

FREQUENCY – Hz

Figure 7. Common-Mode Rejection vs. Frequency

	140
																		VS	= 6	15V
– dB	120																	TA = 1258C
REJECTION	100
SUPPLY	80
	60
POWER
	40
	20
	0
						1k					10k					1M					10M
	100

FREQUENCY – Hz

Figure 8. Power Supply Rejection vs. Frequency

REV. A

–5–