Analog Devices OP183, OP283 Datasheet

a	5 MHz Single-Supply
	Operational Amplifiers
	OP183/OP283

FEATURES

Single-Supply – +3 Volts to +36 Volts Wide Bandwidth – 5 MHz

Low Offset Voltage – <1 mV High Slew Rate – 10 V/ms Low Noise – 10 nV/ÖHz

Unity-Gain Stable

Input and Output Range Includes GND No Phase Reversal

APPLICATIONS

Multimedia

Telecom

ADC Buffers

Wide Band Filters

Microphone Preamplifiers

		PIN CONNECTIONS
8-Lead Narrow-Body SO					8-Lead Epoxy DIP
		(S Suffix)					(P Suffix)
	1		8		NULL	1	OP183	8	NC
	2	OP183	7		–IN	2		7	V+
	3	TOP VIEW	6		+IN	3		6	OUT
		(Not to Scale)
	4		5		V–	4		5	NULL
						NC = NO CONNECT
8-Lead Narrow-Body SO					8-Lead Epoxy DIP
		(S Suffix)					(P Suffix)

	1		8	OUTA	1		8	V+
GENERAL DESCRIPTION
The OP183 is a single-supply, 5 MHz bandwidth amplifier with	2	OP283	7	–INA	2		7	OUTB
slew rates of 10 V/ms. The OP283 is a dual version. Both can	3	TOP VIEW	6	+INA	3		6	–INB
		(Not to Scale)
operate from voltages as low as 3 volts and up to 36 volts. This	4		5	V–	4	OP283	5	+INB
combination of slew rate and bandwidth yields excellent single-
supply ac performance making them ideally suited for telecom and
multimedia audio applications.
In addition to its ac characteristics, the OP183 family provides
good dc performance with guaranteed 1 mV offset. Noise is a
respectable 10 nV/ÖHz. Supply current is only 1.2 mA per amplifier.
These amplifiers are well suited for single-supply applications that
require moderate bandwidths even when used in high gain configu-
rations. This makes them useful in filters and instrumentation.
Their output drive capability and very wide full power bandwidth
make them a good choice for multimedia headphone drivers or
microphone input amplifiers.
The OP183 and OP283 are available in 8-pin plastic DIP and SO-8
surface mount packages. They are specified over the extended
industrial (–40°C to +85°C) temperature range.

REV. B

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OP183/OP283–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = +5.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Units
INPUT CHARACTERISTICS
Offset Voltage	VOS	VCM = 2.5 V, VOUT = 2.5 V,		0.025	1.0	mV
		–40°C £ TA £ +85°C			1.25	mV
Input Bias Current	IB	VCM = 2.5 V, VOUT = 2.5 V,		350	600	nA
		–40°C £ TA £ +85°C		430	750	nA
Input Offset Current	IOS	VCM = 2.5 V, VOUT = 2.5 V,				nA
		–40°C £ TA £ +85°C		11	± 50	nA
Input Voltage Range			0		+3.5	V
Common-Mode Rejection Ratio	CMRR	VCM = 0 to 3.5 V
		–40°C £ TA £ +85°C	70	104		dB
Large Signal Voltage Gain	AVO	RL = 2 kW, 0.2 £ VO £ 3.8 V	100			V/mV
Offset Voltage Drift	DVOS/DT			4		mV/°C
Bias Current Drift	DIB/DT			–1.6		nA/°C
OUTPUT CHARACTERISTICS		RL = 2 kW to GND
Output Voltage High	VOH		+4.0	4.22		V
Output Voltage Low	VOL	RL = 2 kW to GND		50	75	mV
Short Circuit Limit	ISC	Source		25		mA
		Sink		30		mA
POWER SUPPLY
Power Supply Rejection Ratio	PSRR	VS = +4 V to +6 V,
		–40°C £ TA £ +85°C	70	104		dB
Supply Current/Amplifier	ISY	VO = 2.5 V,
		–40°C £ TA £ +85°C		1.2	1.5	mA
Supply Voltage Range	VS		+3		±18	V
DYNAMIC PERFORMANCE		RL = 2 kW				V/ms
Slew Rate	SR		5	10
Full-Power Bandwidth	BWp	1% Distortion		>50		kHz
Settling Time	tS	To 0.01%		1.5		ms
Gain Bandwidth Product	GBP			5		MHz
Phase Margin	fm			46		Degrees
NOISE PERFORMANCE						mV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		2
Voltage Noise Density	en	f = 1 kHz, VCM = 2.5 V		10		nV/ÖHz
Current Noise Density	in			0.4		pA/ÖHz

ELECTRICAL CHARACTERISTICS (@ VS = +3.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions		Min	Typ	Max	Units
INPUT CHARACTERISTICS
Offset Voltage	VOS	VCM = 1.5 V, VOUT = 1.5 V,			0.3	1.0	mV
		–40°C £ TA £ +85°C				1.25	mV
Input Bias Current	IB	VCM = 1.5 V, VOUT = 1.5 V,			350	600	nA
		–40°C £ TA £ +85°C				750	nA
Input Offset Current	IOS	VCM = 1.5 V, VOUT = 1.5 V,					nA
		–40°C £ TA £ +85°C			11	± 50	nA
Input Voltage Range				0		+1.5	V
Common-Mode Rejection Ratio	CMRR	VCM = 0 V to 1.5 V,
		–40°C £ TA £ +85°C		70	103		dB
Large Signal Voltage Gain	AVO	RL = 2 kW, 0.2 £ VO £ 1.8 V		100	260		V/mV
OUTPUT CHARACTERISTICS		RL = 2 kW to GND
Output Voltage High	VOH			+2.0	2.25		V
Output Voltage Low	VOL	RL = 2 kW to GND			90	125	mV
Short Circuit Limit	ISC	Source			25		mA
		Sink			30		mA
POWER SUPPLY
Power Supply Rejection Ratio	PSRR	VS = +2.5 V to +3.5 V,
		–40°C £ TA	£ +85°C	60	113		dB
Supply Current/Amplifier	ISY	–40°C £ TA	£ +85°C, VO = 1.5 V		1.2	1.5	mA
DYNAMIC PERFORMANCE
Gain Bandwidth Product	GBP				5		MHz
NOISE PERFORMANCE							nV/ÖHz
Voltage Noise Density	en	f = 1 kHz, VCM = 1.5 V			10

–2–

REV. B

OP183/OP283

ELECTRICAL CHARACTERISTICS (@ VS = 615.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Units
INPUT CHARACTERISTICS
Offset Voltage	VOS	–40°C £ TA £ +85°C		0.01	1.0	mV
Input Bias Current	IB				1.25	mV
		–40°C £ TA £ +85°C		300	600	nA
				400	750	nA
Input Offset Current	IOS	–40 £ TA £ +85°C		11	±50	nA
Input Voltage Range			–15		+13.5	V
Common-Mode Rejection Ratio	CMRR	VCM = –15 V to +13.5 V,
		–40°C £ TA £ +85°C	70	86		dB
Large Signal Voltage Gain	AVO	RL = 2 kW	100	1000		V/mV
Offset Voltage Drift	DVOS/DT			3		mV/°C
Bias Current Drift	DIB/DT			–1.6		nA/°C
Long Term Offset Voltage	VOS	Note 1			1.5	mV
OUTPUT CHARACTERISTICS		RL = 2 kW to GND, –40°C £ TA £ +85°C
Output Voltage High	VOH		+13.9	14.1		V
Output Voltage Low	VOL	RL = 2 kW to GND, –40°C £ TA £ +85°C		–14.05	–13.9	V
Short-Circuit Limit	ISC	Source		30		mA
		Sink		50		mA
Open -Loop Output Impedance	ZOUT	f = 1 MHz, AV = +1		15		W
POWER SUPPLY
Power Supply Rejection Ratio	PSRR	VS = ±2.5 V to ±18 V,
		–40°C £ TA £ +85°C	70	112		dB
Supply Current/Amplifier	ISY	VS = ±18 V, VO = 0 V,
		–40°C £ TA £ +85°C		1.2	1.75	mA
Supply Voltage Range	VS		+3		±18	V
DYNAMIC PERFORMANCE		RL = 2 kW				V/ms
Slew Rate	SR		10	15
Full-Power Bandwidth	BWp	1% Distortion		50		kHz
Settling Time	tS	To 0.01%		1.5		ms
Gain Bandwidth Product	GBP			5		MHz
Phase Margin	fm			56		degrees
NOISE PERFORMANCE
Voltage Noise	en p-p	0.1 Hz to 10 Hz		2		mV p-p
Voltage Noise Density	en	f = 1 kHz		10		nV/ÖHz
Current Noise Density	in			0.4		pA/ÖHz

NOTES

1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

WAFER TEST LIMITS (@ VS = +5.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions	Limit	Units
Offset Voltage	VOS	VS = ±15 V, VO = 0 V	1.0	mV max
Input Bias Current	IB	VCM = 2.5 V	±600	nA max
Input Offset Current	IOS	VCM = 2.5 V	±50	nA max
Common-Mode Rejection	CMRR	VCM = 0 V to 3.5 V	70	dB min
Power Supply Rejection Ratio	PSRR	V = ±2.5 V to ±18 V	70	dB min
Large Signal Voltage Gain	AVO	RL = 2 kW, 0.2 £ VO £ 3.8 V	100	V/mV min
Output Voltage High	VOH	RL = 2 kW	4.0	V min
Output Voltage Low	VOL	RL = 2 kW	75	mV max
Supply Current/Amplifier	ISY	VS = ±15 V, VO = 0 V, RL = ¥	1.5	mA max

NOTE

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

REV.B

–3–

OP183/OP283

ABSOLUTE MAXIMUM RATINGS1						± 18 V
Supply Voltage . . . . . . . . . .		. . . . . . . . .	. . .	. . . .	. . . .
Input Voltage . . . . . . . . . . . . .		. . . . . . . .	. . .	. . . .	. . . .	. . . . ± 18 V
Differential Input Voltage2 . . .		. . . . . . . .	. . .	. . . .	. . . .	. . . . . ± 7 V
Output Short-Circuit Duration to GND . . .				. . . .	. . . .	. Indefinite
Storage Temperature Range					–65°C to +150°C
P, S Package . . . . . . . . . . . .		. . . . . . . .	. . .	. . .
Operating Temperature Range					–40°C to +85°C
OP183/OP283G . . . . . . . . .		. . . . . . . .	. . .	. . . .
Junction Temperature Range					–65°C to +150°C
P, S Package . . . . . . . . . . . .		. . . . . . . .	. . .	. . . .
Lead Temperature Range (Soldering 60 Sec)				. . .	. . . .	. . . +300°C
Package Type		θJA3		θJC		Units
8-Pin Plastic DIP (P)		103		43		°C/W
8-Pin SOIC (S)		158		43		°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages less than ±7 V, the absolute maximum input voltage is equal to the supply voltage. Maximum input current should not exceed 2 mA. 3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP packages; θJA is specified for device soldered in circuit board for SOIC packages.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
OP183GP	–40°C to +85°C	8-Pin Plastic DIP	N-8
OP183GS	–40°C to +85°C	8-Pin SOIC	SO-8
OP283GP	–40°C to +85°C	8-Pin Plastic DIP	N-8
OP283GS	–40°C to +85°C	8-Pin SOIC	SO-8

DICE CHARACTERISTICS

V+

OUT NULL

NULL

–IN IN+

V–

OP183 Die Size 0.058 X 0.063 Inch, 3,717 Sq. Mils Substrate (Die Backside) Is Connected to V–. Transistor Count, 30.

V+ OUTB

–INB +INB

OUTA

–INA +INA

V–

OP283 Die Size 0.063 X 0.092 Inch, 5,796 Sq. Mils Substrate (Die Backside) Is Connected to V–. Transistor Count, 55.

–4–

REV. B