Analog Devices REF192GP, REF192GRU, REF192GS, REF193ES, REF193FS Datasheet

a		Precision Micropower, Low Dropout,
		Voltage References
		REF19x Series

FEATURES

Initial Accuracy: 62 mV max

Temperature Coefficient: 5 ppm/°C max

Low Supply Current: 45 mA max

Sleep Mode: 15 mA max

Low Dropout Voltage

Load Regulation: 4 ppm/mA

Line Regulation: 4 ppm/V

High Output Current: 30 mA

Short Circuit Protection

APPLICATIONS

Portable Instrumentation

A-to-D and D-to-A Converters

Smart Sensors

Solar Powered Applications

Loop Current Powered Instrumentations

GENERAL DESCRIPTION

REF19x series precision bandgap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable thin film resistors to achieve a very low temperature coefficient and a high initial accuracy.

PIN CONFIGURATIONS

8-Lead Narrow-Body SO and TSSOP

(S Suffix and RU Suffix)

TP 1

8 NC

	VS		REF19x		NC
		2		7
			SERIES
					OUTPUT
	SLEEP	3	TOP VIEW 6
	GND		(Not to Scale)		TP
		4		5

8-Lead Epoxy DIP (P Suffix)

						NC
TP	1				8
		REF19x
VS	2	SERIES			7	NC
		TOP VIEW				OUTPUT
SLEEP	3				6
		(Not to Scale)
GND	4				5	TP

NC = NO CONNECT

TP PINS ARE FACTORY TEST POINTS

NO USER CONNECTION

The REF19x series are micropower, Low Dropout Voltage (LDV) devices providing a stable output voltage from supplies as low as 100 mV above the output voltage and consuming less than 45 A of supply current. In sleep mode, which is enabled by applying a low TTL or CMOS level to the sleep pin, the output is turned off and supply current is further reduced to less than 15 A.

The REF19x series references are specified over the extended industrial temperature range (–40°C to +85°C) with typical performance specifications over –40°C to +125°C for applications such as automotive.

All electrical grades are available in 8-Lead SOIC; the PDIP and TSSOP are only available in the lowest electrical grade. Products are also available in die form.

Test Pins (TP)

The test pins, Pin 1 and Pin 5, are reserved for in-package zener-zap. To achieve the highest level of accuracy at the output, the zener-zapping technique is used to trim the output voltage. Since each unit may require a different amount of adjustment, the resistance value at the test pins will vary widely from pin-to-pin as well as from part-to-part. The user should not make any physical nor electrical connections to Pin 1 and Pin 5.

					Table I
	Part Number				Nominal Output Voltage (V)
	REF191				2.048
	REF192				2.50
	REF193				3.00
	REF194				4.50
	REF195				5.00
	REF196				3.30
	REF198				4.096
				ORDERING GUIDE
			Temperature			Package	Package
Model			Range			Description	Option1
REF19xGP			–40°C to +85°C			8-Lead Plastic DIP2	N-8
REF19xES3			–40°C to +85°C			8-Lead SOIC	SO-8
REF19xFS3			–40°C to +85°C			8-Lead SOIC	SO-8
REF19xGS			–40°C to +85°C			8-Lead SOIC	SO-8
REF19xGRU			–40°C to +85°C			8-Lead TSSOP	RU-8
REF19xGBC			+25°C			DICE

NOTES

1N = Plastic DIP, SO = Small Outline, RU = Thin Shrink Small Outline. 28-Lead plastic DIP only available in “G” grade.

3REF193 and REF196 are available in “G” grade only.

REV. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 1999

REF19x Series

REF191–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Units
INITIAL ACCURACY1
“E” Grade	VO	IOUT = 0 mA	2.046	2.048	2.050	V
“F” Grade			2.043		2.053	V
“G” Grade			2.038		2.058	V
LINE REGULATION2		3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO/ VIN			2	4	ppm/V
“F & G” Grades				4	8	ppm/V
LOAD REGULATION2		VS = 5.0 V, 0 ≤ IOUT ≤ 30 mA
“E” Grade	VO/ VLOAD			4	10	ppm/mA
“F & G” Grades				6	15	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.15 V, ILOAD = 2 mA			0.95	V
		VS = 3.3 V, ILOAD = 10 mA			1.25	V
		VS = 3.6 V, ILOAD = 30 mA			1.55	V
LONG-TERM STABILITY3	VO	1000 Hours @ +125°C		1.2		mV
NOISE VOLTAGE	eN	0.1 Hz to 10 Hz		20		µV p-p

NOTES

1Initial accuracy includes temperature hysteresis effect.

2Line and load regulation specifications include the effect of self-heating.

3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +858C unless otherwise noted)

Parameter	Symbol	Condition	Min Typ	Max	Units
TEMPERATURE COEFFICIENT1, 2	TCVO/°C				ppm/°C
“E” Grade		IOUT = 0 mA	2	5
“F” Grade			5	10	ppm/°C
“G” Grade3			10	25	ppm/°C
LINE REGULATION4		3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO/ VIN		5	10	ppm/V
“F & G” Grades			10	20	ppm/V
LOAD REGULATION4		VS = 5.0 V, 0 ≤ IOUT ≤ 25 mA
“E” Grade	VO/ VLOAD		5	15	ppm/mA
“F & G” Grades			10	20	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.15 V, ILOAD = 2 mA		0.95	V
		VS = 3.3 V, ILOAD = 10 mA		1.25	V
		VS = 3.6 V, ILOAD = 25 mA		1.55	V
SLEEP PIN
Logic High Input Voltage	VH		2.4		V
Logic High Input Current	IH			–8	µA
Logic Low Input Voltage	VL			0.8	V
Logic Low Input Current	IL			–8	µA
SUPPLY CURRENT		No Load		45	µA
Sleep Mode		No Load		15	µA

NOTES

1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.

2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.

TCVO = (V max–V min)/VO (TMAX–TMIN).

3Guaranteed by characterization.

4Line and load regulation specifications include the effect of self-heating.

Specifications subject to change without notice.

–2–

REV. D

REF19x Series

REF191–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +1258C unless otherwise noted)

Parameter	Symbol	Condition	Min Typ Max	Units
TEMPERATURE COEFFICIENT1, 2	TCVO/°C			ppm/°C
“E” Grade		IOUT = 0 mA	2
“F” Grade			5	ppm/°C
“G” Grade3			10	ppm/°C
LINE REGULATION4		3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO/ VIN		10	ppm/V
“F & G” Grades			20	ppm/V
LOAD REGULATION4		VS = 5.0 V, 0 ≤ IOUT ≤ 20 mA
“E” Grade	VO/ VLOAD		10	ppm/mA
“F & G” Grades			20	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.3 V, ILOAD = 10 mA	1.25	V
		VS = 3.6 V, ILOAD = 20 mA	1.55	V

NOTES

1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.

2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.

TCVO = (V max–V min)/VO (TMAX–TMIN).

3Guaranteed by characterization.

4Line and load regulation specifications include the effect of self-heating.

Specifications subject to change without notice.

REV. D

–3–

REF19x Series

REF192–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Units
INITIAL ACCURACY1
“E” Grade	VO	IOUT = 0 mA	2.498	2.500	2.502	V
“F” Grade			2.495		2.505	V
“G” Grade			2.490		2.510	V
LINE REGULATION2		3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO/ VIN			2	4	ppm/V
“F & G” Grades				4	8	ppm/V
LOAD REGULATION2		VS = 5.0 V, 0 ≤ IOUT ≤ 30 mA
“E” Grade	VO/ VLOAD			4	10	ppm/mA
“F & G” Grades				6	15	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.5 V, ILOAD = 10 mA			1.00	V
		VS = 3.9 V, ILOAD = 30 mA			1.40	V
LONG-TERM STABILITY3	VO	1000 Hours @ +125°C		1.2		mV
NOISE VOLTAGE	eN	0.1 Hz to 10 Hz		25		µV p-p

NOTES

1Initial accuracy includes temperature hysteresis effect.

2Line and load regulation specifications include the effect of self-heating.

3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = –408C ≤ TA ≤ +858C unless otherwise noted)

Parameter	Symbol	Condition	Min Typ	Max	Units
TEMPERATURE COEFFICIENT1, 2	TCVO/°C				ppm/°C
“E” Grade		IOUT = 0 mA	2	5
“F” Grade			5	10	ppm/°C
“G” Grade3			10	25	ppm/°C
LINE REGULATION4		3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO / VIN		5	10	ppm/V
“F & G” Grades			10	20	ppm/V
LOAD REGULATION4		VS = 5.0 V, 0 ≤ IOUT ≤ 25 mA
“E” Grade	VO / VLOAD		5	15	ppm/mA
“F & G” Grades			10	20	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.5 V, ILOAD = 10 mA		1.00	V
		VS = 4.0 V, ILOAD = 25 mA		1.50	V
SLEEP PIN
Logic High Input Voltage	VH		2.4		V
Logic High Input Current	IH			–8	µA
Logic Low Input Voltage	VL			0.8	V
Logic Low Input Current	IL			–8	µA
SUPPLY CURRENT		No Load		45	µA
Sleep Mode		No Load		15	µA

NOTES

1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.

2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.

TCVO = (V max–V min)/VO (TMAX–TMIN).

3Guaranteed by characterization.

4Line and load regulation specifications include the effect of self-heating.

Specifications subject to change without notice.

–4–

REV. D

REF19x Series

REF192–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +1258C unless otherwise noted)

Parameter	Symbol	Condition	Min Typ Max	Units
TEMPERATURE COEFFICIENT1, 2	TCVO/°C			ppm/°C
“E” Grade		IOUT = 0 mA	2
“F” Grade			5	ppm/°C
“G” Grade3			10	ppm/°C
LINE REGULATION4		3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO / VIN		10	ppm/V
“F & G” Grades			20	ppm/V
LOAD REGULATION4		VS = 5.0 V, 0 ≤ IOUT ≤ 20 mA
“E” Grade	VO / VLOAD		10	ppm/mA
“F & G” Grades			20	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.5 V, ILOAD = 10 mA	1.00	V
		VS = 4.0 V, ILOAD = 20 mA	1.50	V

NOTES

1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.

2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.

TCVO = (V max–V min)/VO (TMAX–TMIN).

3Guaranteed by characterization.

4Line and load regulation specifications include the effect of self-heating. Specifications subject to change without notice.

REF193–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Units
INITIAL ACCURACY1
“G” Grade	VO	IOUT = 0 mA	2.990	3.0	3.010	V
LINE REGULATION2		3.3 V, ≤ VS ≤ 15 V, IOUT = 0 mA
“G” Grades	VO/ VIN			4	8	ppm/V
LOAD REGULATION2		VS = 5.0 V, 0 ≤ IOUT ≤ 30 mA
“G” Grade	VO/ VLOAD			6	15	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.8 V, ILOAD = 10 mA			0.80	V
		VS = 4.0 V, ILOAD = 30 mA			1.00	V
LONG-TERM STABILITY 3	VO	1000 Hours @ +125°C		1.2		mV
NOISE VOLTAGE	eN	0.1 Hz to 10 Hz		30		V p-p

NOTES

1Initial accuracy includes temperature hysteresis effect.

2Line and load regulation specifications include the effect of self-heating.

3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

REV. D

–5–

REF19x Series

REF193–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = –408C ≤ TA ≤ +858C unless otherwise noted)

Parameter	Symbol	Condition	Min Typ	Max	Units
TEMPERATURE COEFFICIENT1, 2	TCVO/°C				ppm/°C
“G” Grade3		IOUT = 0 mA	10	25
LINE REGULATION4		3.3 V ≤ VS ≤ 15 V, IOUT = 0 mA
“G” Grade	VO/ VIN		10	20	ppm/V
LOAD REGULATION4		VS = 5.0 V, 0 ≤ IOUT ≤ 25 mA
“G” Grade	VO/ VLOAD		10	20	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.8 V, ILOAD = 10 mA		0.80	V
		VS = 4.1 V, ILOAD = 30 mA		1.10	V
SLEEP PIN
Logic High Input Voltage	VH		2.4		V
Logic High Input Current	IH			–8	µA
Logic Low Input Voltage	VL			0.8	V
Logic Low Input Current	IL			–8	µA
SUPPLY CURRENT		No Load		45	µA
Sleep Mode		No Load		15	µA
NOTES

1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.

2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.

TCVO = (V max–V min)/VO (TMAX–TMIN).

3Guaranteed by characterization.

4Line and load regulation specifications include the effect of self-heating. Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +1258C unless otherwise noted)

Parameter	Symbol	Condition	Min Typ Max	Units
TEMPERATURE COEFFICIENT1, 2	TCVO/°C			ppm/°C
“G” Grade3		IOUT = 0 mA	10
LINE REGULATION4		3.3 V ≤ VS ≤ 15 V, IOUT = 0 mA
“G” Grade	VO / VIN		20	ppm/V
LOAD REGULATION4		VS = 5.0 V, 0 ≤ IOUT ≤ 20 mA
“G” Grade	VO / VLOAD		10	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 3.8 V, ILOAD = 10 mA	0.80	V
		VS = 4.1 V, ILOAD = 20 mA	1.10	V

NOTES

1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.

2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.

TCVO = (V max–V min)/VO (TMAX–TMIN).

3Guaranteed by characterization.

4Line and load regulation specifications include the effect of self-heating.

Specifications subject to change without notice.

–6–

REV. D

REF19x Series

REF194–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 5.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Units
INITIAL ACCURACY1
“E” Grade	VO	IOUT = 0 mA	4.498	4.5	4.502	V
“F” Grade			4.495		4.505	V
“G” Grade			4.490		4.510	V
LINE REGULATION2		4.75 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO / VIN			2	4	ppm/V
“F & G” Grades				4	8	ppm/V
LOAD REGULATION2		VS = 5.8 V, 0 ≤ IOUT ≤ 30 mA
“E” Grade	VO / VLOAD			2	4	ppm/mA
“F & G” Grades				4	8	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 5.00 V, ILOAD = 10 mA			0.50	V
		VS = 5.8 V, ILOAD = 30 mA			1.30	V
LONG-TERM STABILITY3	VO	1000 Hours @ +125°C		2		mV
NOISE VOLTAGE	eN	0.1 Hz to 10 Hz		45		µV p-p
NOTES

1Initial accuracy includes temperature hysteresis effect.

2Line and load regulation specifications include the effect of self-heating.

3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3. Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 5.0 V, TA = –408C ≤ TA ≤ +858C unless otherwise noted)

Parameter	Symbol	Condition	Min Typ	Max	Units
TEMPERATURE COEFFICIENT1, 2	TCVO/°C				ppm/°C
“E” Grade		IOUT = 0 mA	2	5
“F” Grade			5	10	ppm/°C
“G” Grade3			10	25	ppm/°C
LINE REGULATION4		4.75 V ≤ VS ≤ 15 V, IOUT = 0 mA
“E” Grade	VO / VIN		5	10	ppm/V
“F & G” Grades			10	20	ppm/V
LOAD REGULATION4		VS = 5.80 V, 0 ≤ IOUT ≤ 25 mA
“E” Grade	VO / VLOAD		5	15	ppm/mA
“F & G” Grades			10	20	ppm/mA
DROPOUT VOLTAGE	VS – VO	VS = 5.00 V, ILOAD = 10 mA		0.5	V
		VS = 5.80 V, ILOAD = 25 mA		1.30	V
SLEEP PIN
Logic High Input Voltage	VH		2.4		V
Logic High Input Current	IH			–8	µA
Logic Low Input Voltage	VL			0.8	V
Logic Low Input Current	IL			–8	µA
SUPPLY CURRENT		No Load		45	µA
Sleep Mode		No Load		15	µA

NOTES

1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.

2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.

TCVO = (V max–V min)/VO (TMAX–TMIN).

3Guaranteed by characterization.

4Line and load regulation specifications include the effect of self-heating.

Specifications subject to change without notice.

REV. D

–7–