Analog Devices OP282GS, OP282GP, OP482GP, OP482GS Datasheet

a Dual/QuadJFETLowOperationalPower, HighAmplifiersSpeed

OP282/OP482

FEATURES

High Slew Rate: 9 V/ s

Wide Bandwidth: 4 MHz

Low Supply Current: 250 A/Amplifier

Low Offset Voltage: 3 mV

Low Bias Current: 100 pA

Fast Settling Time

Common-Mode Range Includes V+

Unity Gain Stable

APPLICATIONS

Active Filters

Fast Amplifiers

Integrators

Supply Current Monitoring

GENERAL DESCRIPTION

The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. Slew rate exceeds 7 V/μs with supply current under 250 μA per amplifier. These unity gain stable amplifiers have a typical gain bandwidth of 4 MHz.

The JFET input stage of the OP282/OP482 ensures bias current is typically a few picoamps and below 500 pA over the full temperature range. Offset voltage is under 3 mV for the dual and under 4 mV for the quad.

With a wide output swing, within 1.5 V of each supply, low power consumption, and high slew rate, the OP282/OP482 are ideal for battery powered systems or power restricted applications. An input common-mode range that includes the positive supply makes the OP282/OP482 an excellent choice for highside signal conditioning.

The OP282/OP482 are specified over the extended industrial temperature range. Both dual and quad amplifiers are available in plastic DIP plus SOIC surface mount packages.

PIN CONNECTIONS

8-Lead Narrow-Body SOIC	8-Lead Epoxy DIP
(S Suffix)	(P Suffix)

OUT A	1		8	V	OUT A	1		OP282	8	V
IN A	2		7	OUT B
		OP282			IN A	2	+ ñ		7	OUT B
IN A	3		6	IN B
					IN A	3		ñ +	6	IN B
V	4	OP-482	5	IN B	V	4			5	IN B

14-Lead Epoxy DIP	14-Lead Narrow-Body SOIC
(P Suffix)	(S Suffix)

OUT A	1			14	OUT D
IN A 2		ñ +	+ ñ	13	IN D
IN A	3			12	IN D
V	4	OP482		11	Vñ
IN B	5			10	IN C
IN B 6		ñ +	+ ñ	9 IN C
OUT B	7			8	OUT C

OUT A				OUT B
	1		14
IN A				IN D
	2		13
IN A				IN D
	3	OP482	12
V+				V
	4		11
IN B				IN C
	5		10
IN B				IN C
	6		9
OUT B				OUT C
	7		8

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OP282/OP482–SPECIFICATIONS			(TA = 25 C, VS = 3 V, fRF = 900 MHz, ground reference output mode,
			unless otherwise noted.)
ELECTRICAL CHARACTERISTICS (@ VS = 15.0 V, TA = 25 C unless otherwise noted.)
Parameter	Symbol	Conditions		Min	Typ	Max	Unit
INPUT CHARACTERISTICS
Offset Voltage	VOS	OP282			0.2	3	mV
	VOS	OP282, –40 ≤ TA ≤ +85∞C				4.5	mV
		OP482			0.2	4	mV
Input Bias Current	IB	OP482, –40 ≤ TA ≤ +85∞C				6	mV
		VCM = 0 V			3	100	pA
Input Offset Current	IOS	VCM = 0 V, Note 1				500	pA
		VCM = 0 V			1	50	pA
		VCM = 0 V, Note 1				250	pA
Input Voltage Range		–11 V ≤ VCM ≤ +15 V, –40∞C ≤ TA ≤ +85∞C		–11		+15	V
Common-Mode Rejection	CMR			70	90		dB
Large Signal Voltage Gain	AVO	RL = 10 kΩ		20			V/mV
		RL = 10 kΩ, –40∞C ≤ TA ≤ +85∞C		15			V/mV
Offset Voltage Drift	VOS/ T				10		μV/∞C
Bias Current Drift	IB/ T				8		pA/∞C
OUTPUT CHARACTERISTICS		RL = 10 kΩ			±13.9
Output Voltage Swing	VO			–13.5		13.5	V
Short Circuit Limit	ISC	Source		3	10		mA
		Sink		–8	–12		mA
Open-Loop Output Impedance	ZOUT	f = 1 MHz			200		Ω
POWER SUPPLY		VS = ±4.5 V to ±18 V,
Power Supply Rejection Ratio	PSRR						μV/V
		–40∞C ≤ TA ≤ +85∞C			25	316
Supply Current/Amplifier	ISY	VO = 0 V, 40∞C ≤ TA ≤ 85∞C		±4.5	210	250	μA
Supply Voltage Range	VS					±18	V
DYNAMIC PERFORMANCE		RL = 10 kΩ					V/μs
Slew Rate	SR			7	9
Full-Power Bandwidth	BWP	1% Distortion			125		kHz
Settling Time	tS	To 0.01%			1.6		μs
Gain Bandwidth Product	GBP				4		MHz
Phase Margin	ØO				55		Degrees
NOISE PERFORMANCE							μV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz			1.3
Voltage Noise Density	en	f = 1 kHz			36		nV/ Hz
Current Noise Density	in				0.01		pA/ Hz

NOTE

1The input bias and offset currents are tested at TA = TJ = 85∞C. Bias and offset currents are guaranteed but not tested at –40∞C.

Specifications subject to change without notice.

–2–

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OP282/OP482

ABSOLUTE MAXIMUM RATINGS						±18 V
Supply Voltage . . . . . . . . . . . . .		. . . . . . .	. . .	. . . . . .	.
Input Voltage1 . . . . . . . . . . . . .		. . . . . . .	. . . .	. . . . . .		. . ±18 V
Differential Input Voltage1 . . .		. . . . . . .	. . . .	. . . . . .		. . . 36 V
Output Short-Circuit Duration		. . . . . . .	. . . .	. . . . .	Indefinite
Storage Temperature Range				–65∞C to +150∞C
P, S Packages . . . . . . . . . . . .		. . . . . . .	. . .
Operating Temperature Range				–40∞C to +85∞C
OP282G, OP482G . . . . . . . .		. . . . . . .	. . . .
Junction Temperature Range				–65∞C to +125∞C
P, S Packages . . . . . . . . . . . .		. . . . . . .	. . .
Lead Temperature Range (Soldering 60 sec) .				. . . . . .		. . 300∞C
Package Type		JA2		JC		Units
8-Pin Plastic DIP (P)		103		43		∞C/W
8-Pin SOIC (S)		158		43		∞C/W
14-Pin Plastic DIP (P)		83		39		∞C/W
14-Pin SOIC (S)		120		36		∞C/W

NOTES

1For supply voltages less than ±18 V, the absolute maximum input voltage is equal to the supply voltage.

2θJA is specified for the worst case conditions; i.e., θJA is specified for device in socket for cerdip, PDIP; θJA is specified for device soldered in circuit board for SOIC package.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
OP282GP*	–40∞C to +85∞C	8-Pin Plastic DIP	N-8
OP282GS	–40∞C to +85∞C	8-Pin SOIC	SO-8
OP482GP	–40∞C to +85∞C	14-Pin Plastic DIP	N-14
OP482GS	–40∞C to +85∞C	14-Pin SOIC	SO-14

*Not for new designs, obsolete April 2002.

For military processed devices, please refer to the Standard Microcircuit Drawing (SMD) available at www.dscc.dla.mil/programs/milspec/default.asp

SMD Part Number	ADI Equivalent
5962–9458101M2A*	OP482ARC/883
5962–9458101MCA*	OP482AY/883

*Not for new designs, obsolete April 2002.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP282/OP482 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. C

–3–

OP282/OP482–Typical Performance Characteristics

80																													0			35
																		TA = 25 C
																																30								VS =		15V
																		VS = 15V
60																													45	PHASEñ Degrees	LOOP-OPENGAIN ñ V/MV									RL = 10k
LOOP-OPENGAIN ñ dB																													90			25
40																																20
20																													135			15
																																10
0																													180
																																5
1k				10k				100k						1M						10M				100M								75		50 25 0 25 50 75								100 125
							FREQUENCY ñ Hz																												TEMPERATURE ñ C
TPC 1. Open-Loop Gain, Phase																																TPC 2. Open-Loop Gain (V/mV)
vs. Frequency

	70			AVCL = 1
	60			NEGATIVE EDGE
		VS = 15V
%	50	RL = 2k
		VIN = 100mV p-p
ñ	40			AVCL = 1
OVERSHOOT
				POSITIVE EDGE
	30
	20
	10
	0	100	200	300	400	500
	0

LOAD CAPACITANCE ñ pF

TPC 3. Small Signal Overshoot vs. Load Capacitance

	60
	50					TA = 25 C
						VS = 15V
dB	40
							SLEWRATE ñ V/ s
LOOP-OPENGAIN ñ	0
	30	AVCL = 10
	20
	10
	ñ10
	ñ20
		1k	10k	100k	1M	10M	100M
				FREQUENCY ñ Hz

										1000
25												VS = 15V
			ñSR						PA			VCM = 0
20						VS	= 15V			100
									ñ
						RL = 10k			CURRENT
15						CL = 50pF
									BIAS	10
10
									INPUT
5			SR							1.0
ñ75	ñ50	ñ25	0	25	50	75	100	125		0.1
										ñ50	ñ25	0	25	50	75	100	125
			TEMPERATURE ñ C								TEMPERATURE ñ C

TPC 4. Closed-Loop Gain vs.	TPC 5. OP282/OP482 Slew Rate	TPC 6. OP282 Input Bias Current
Frequency	vs. Temperature	vs. Temperature

	60																5.0
												VS = 15V						MHz
												RL = 10k
DegreesñMARGINPHASE	55																4.5	PRODUCTBANDWIDTHGAINñ
												GBW
	50																4.0
	45																3.5
	40																3.0
	ñ75		ñ50		ñ25		0	25		50		75		100		125

TEMPERATURE ñ C

TPC 7. OP482 Phase Margin and Gain Bandwidth Product vs. Temperature

VOLTAGE NOISE DENSITY ñ nV/ Hz

80
70												VS = 15V
												TA = 25 C
60
50
40
30
20
10
0
10		100								1k					10k

FREQUENCY ñ Hz

TPC 8. Voltage Noise Density vs. Frequency

	1000
				VS = 15V
ñ pA	100			TA = 25 C
CURRENT	10
BIAS
INPUT	1
	0.1
	ñ15	ñ10	ñ5	0	5	10	15

COMMON-MODE VOLTAGE ñ V

TCP 9. OP282 Input Bias Current vs. Common-Mode Voltage

–4–

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