Analog Devices OP2177ARM, OP2177AR, OP4177AR, OP1177AR, OP4177ARM Datasheet

a Precision Low Noise, Low Input

Bias Current Operational Amplifiers

OP1177/OP2177/OP4177

FEATURES

Low Offset Voltage: 60 V Max

Very Low Offset Voltage Drift: 0.7 V/ C Max

Low Input Bias Current: 2 nA Max Low Noise: 8 nV/√Hz

CMRR, PSRR, and AVO > 120 dB Min

Low Supply Current: 400 A/Amp

Dual Supply Operation: 2.5 V to 15 V

Unity Gain Stable

No Phase Reversal

Inputs Internally Protected Beyond Supply Voltage

APPLICATIONS

Wireless Base Station Control Circuits

Optical Network Control Circuits

Instrumentation

Sensors and Controls

Thermocouples

RTDs

Strain Bridges

Shunt Current Measurements

Precision Filters

GENERAL DESCRIPTION

The OPx177 family consists of very high-precision, single, dual, and quad amplifiers featuring extremely low offset voltage and drift, low input bias current, low noise, and low power consumption. Outputs are stable with capacitive loads of over 1,000 pF with no external compensation. Supply current is less than 500 µA per amplifier at 30 V. Internal 500 Ω series resistors protect the inputs, allowing input signal levels several volts beyond either supply without phase reversal.

Unlike previous high-voltage amplifiers with very low offset voltages, the OP1177 and OP2177 are available in the tiny MSOP 8-lead sur- face-mount package, while the OP4177 is available in TSSOP14. Moreover, specified performance in the MSOP/TSSOP package is identical to performance in the SOIC package.

OPx177 family offers the widest specified temperature range of any high-precision amplifier in surface-mount packaging. All versions are fully specified for operation from –40°C to +125°C for the most demanding operating environments.

Applications for these amplifiers include precision diode power measurement, voltage and current level setting, and level detection in optical and wireless transmission systems. Additional applications include line powered and portable instrumentation

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

FUNCTIONAL BLOCK DIAGRAM

8-Lead MSOP

8-Lead SOIC

(RM-Suffix)

(R-Suffix)

NC

1

8

NC

NC

NC

IN

OP1177

V+

1

8

IN

OUT

IN

V+

V

4

5

NC

2

OP1177

7

+IN

3

6

OUT

NC = NO CONNECT

V

NC

4

5

NC = NO CONNECT

8-Lead MSOP

8-Lead SOIC

(RM-Suffix)

(R-Suffix)

V+

OUT A

1

8

OUT A

V+

IN A

OP2177

OUT B

1

8

IN A

–IN B

IN A

2

OP2177

7

OUT B

V

4

5

+IN B

+IN A

3

6

IN B

+IN B

V

4

5

	14-Lead SOIC						14-Lead TSSOP
		(R-Suffix)					(RU-Suffix)
OUT A	1			14	OUT D	OUT A		1	14		OUT D
						–IN A					–IN D
IN A	2			13	IN D	+IN A			OP4177		+IN D
						V+					V–
+IN A					+IN D	+IN B					+IN C
	3		OP4177	12
						–IN B					–IN C
V+	4		OP4177	11	V	OUT B		7	8		OUT C
+IN B					+IN C
	5			10
IN B	6			9	IN C
OUT B	7			8	OUT C

and controls—thermocouple, RTD, strain-bridge, and other sensor signal conditioning—and precision filters.

The OP1177 (single) and the OP2177 (dual) amplifiers are available in the 8-lead MSOP and 8-lead SOIC packages. The OP4177 (quad) is available in 14-lead narrow SOIC and 14-lead TSSOP packages. MSOP and TSSOP packages are available in tape and reel only.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

		(@ VS = 5.0 V, VCM = 0 V, TA = 25 C, unless
OP1177/OP2177/OP4177–SPECIFICATIONS otherwise noted.)
Parameter	Symbol	Conditions	Min	Typ*	Max	Unit
INPUT CHARACTERISTICS
Offset Voltage				15	60	µV
OP1177	VOS
OP2177/4177	VOS			15	75	µV
OP1177/2177	VOS	–40°C < TA < +125°C		25	100	µV
OP4177	VOS	–40°C < TA < +125°C		25	120	µV
Input Bias Current	IB	–40°C < TA < +125°C	–2	+0.5	+2	nA
Input Offset Current	IOS	–40°C < TA < +125°C	–1	+0.2	+1	nA
Input Voltage Range			–3.5		+3.5	V
Common-Mode Rejection Ratio	CMRR	VCM = –3.5 V to +3.5 V	120	126		dB
		–40°C < TA < +125°C	118	125		dB
Large Signal Voltage Gain	AVO	RL = 2 kΩ , VO = –3.5 V to +3.5 V	1,000	2,000		V/mV
Offset Voltage Drift	∆VOS/∆T	–40°C < TA < +125°C				µV/°C
OP1177/OP2177				0.2	0.7
OP4177	∆VOS/∆T	–40°C < TA < +125°C		0.3	0.9	µV/°C
OUTPUT CHARACTERISTICS		IL = 1 mA, –40°C < TA < +125°C
Output Voltage High	VOH		+4	+4.1		V
Output Voltage Low	VOL	IL = 1 mA, –40°C < TA < +125°C		–4.1	–4	V
Output Current	IOUT	VDROPOUT < 1.2 V		± 10		mA
POWER SUPPLY
Power Supply Rejection Ratio		VS = ± 2.5 V to ± 15 V,	120	130		dB
OP1177	PSRR
		–40°C < TA < +125°C	115	125		dB
OP2177/OP4177	PSRR	VS = ± 2.5 V to ± 15 V,	118	121		dB
		–40°C < TA < +125°C	114	120		dB
Supply Current/Amplifier	ISY	VO = 0 V		400	500	µA
		–40°C < TA < +125°C		500	600	µA
DYNAMIC PERFORMANCE		RL = 2 kΩ		0.7		V/µs
Slew Rate	SR
Gain Bandwidth Product	GBP			1.3		MHz
NOISE PERFORMANCE						µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		0.4
Voltage Noise Density	en	f = 1 kHz		7.9	8.5	nV/√Hz
Current Noise Density	in	f = 1 kHz		0.2		pA/√Hz
MULTIPLE AMPLIFIERS						µV/V
CHANNEL SEPARATION	CS	DC		0.01
		f = 100 kHz		–120		dB

*Typical values cover all parts within one standard deviation of the average value. Average values, given in many competitors ’ data sheets as “typical,” give unrealistically low estimates for parameters that can have both positive and negative values.

Specifications subject to change without notice.

–2–

REV. B

OP1177/OP2177/OP4177

ELECTRICAL CHARACTERISTICS (@ VS = 15 V, VCM = 0 V, TA = 25 C, unless otherwise noted.)

Parameter	Symbol	Conditions	Min	Typ*	Max	Unit
INPUT CHARACTERISTICS
Offset Voltage						µV
OP1177	VOS			15	60
OP2177/OP4177	VOS			15	75	µV
OP1177/OP2177	VOS	–40°C < TA < +125°C		25	100	µV
OP4177	VOS	–40°C < TA < +125°C		25	120	µV
Input Bias Current	IB	–40°C < TA < +125°C	–2	+0.5	+2	nA
Input Offset Current	IOS	–40°C < TA < +125°C	–1	+0.2	+1	nA
Input Voltage Range			–13.5		+13.5	V
Common-Mode Rejection Ratio	CMRR	VCM = –13.5 V to +13.5 V
		–40°C < TA < +125°C	120	125		dB
Large Signal Voltage Gain	AVO	RL = 2 kΩ , VO = –13.5 V to +13.5 V	1,000	3,000		V/mV
Offset Voltage Drift	∆VOS/∆T	–40°C < TA < +125°C		0.2	0.7	µV/°C
OP1177/OP2177
OP4177	∆VOS/∆T	–40°C < TA < +125°C		0.3	0.9	µV/°C
OUTPUT CHARACTERISTICS		IL = 1 mA, –40°C < TA < +125°C
Output Voltage High	VOH		+14	+14.1		V
Output Voltage Low	VOL	IL = 1 mA, –40°C < TA < +125°C		–14.1	–14	V
Output Current	IOUT	VDROPOUT < 1.2 V		± 10		mA
Short Circuit Current	ISC			± 35		mA
POWER SUPPLY
Power Supply Rejection Ratio		VS = ± 2.5 V to ± 15 V,
OP1177	PSRR		120	130		dB
		–40°C < TA < +125°C	115	125		dB
OP2177/OP4177	PSRR	VS = ± 2.5 V to ± 15 V,	118	121		dB
		–40°C < TA < +125°C	114	120		dB
Supply Current/Amplifier	ISY	VO = 0 V		400	500	µA
		–40°C < TA < +125°C		500	600	µA
DYNAMIC PERFORMANCE		RL = 2 kΩ				V/µs
Slew Rate	SR			0.7
Gain Bandwidth Product	GBP			1.3		MHz
NOISE PERFORMANCE						µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		0.4
Voltage Noise Density	en	f = 1 kHz		7.9	8.5	nV/√Hz
Current Noise Density	in	f = 1 kHz		0.2		pA/√Hz
MULTIPLE AMPLIFIERS						µV/V
CHANNEL SEPARATION	CS	DC		0.01
		f = 100 kHz		–120		dB

*Typical values cover all parts within one standard deviation of the average value. Average values, given in many competitors ’ data sheets as “typical,” give unrealistically low estimates for parameters that can have both positive and negative values.

Specifications subject to change without notice.

REV. B

–3–

OP1177/OP2177/OP4177

ABSOLUTE MAXIMUM RATINGS*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . 36 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . VS– to VS+
Differential Input Voltage . . . . . . . . . . . . . .	± Supply Voltage
Storage Temperature Range	–65°C to +150°C
R, RM, and RU Packages . . . . . . . . . . .
Operating Temperature Range	–40°C to +125°C
OP1177/OP2177/OP4177 . . . . . . . . . . .
Junction Temperature Range	–65°C to +150°C
R, RM, and RU Packages . . . . . . . . . . .
Lead Temperature Range (Soldering, 10 sec)	. . . . . . . 300°C

*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Package Type	JA1	JC	Unit
8-Lead MSOP (RM)2	190	44	°C/W
8-Lead SOIC (R)	158	43	°C/W
14-Lead SOIC (R)	120	36	°C/W
14-Lead TSSOP (RU)	240	43	°C/W

NOTES

1θJA is specified for worst-case conditions, i.e., θJA is specified for device soldered in circuit board for surface-mount packages.

2MSOP is only available in tape and reel.

ORDERING GUIDE

	Temperature	Package	Package	Branding
Model	Range	Description	Option	Information
OP1177ARM	–40°C to +125°C	8-Lead MINI_SOIC	RM-8	AZA
OP1177AR	–40°C to +125°C	8-Lead SOIC	SO-8
OP2177ARM	–40°C to +125°C	8-Lead MINI_SOIC	RM-8	B2A
OP2177AR	–40°C to +125°C	8-Lead SOIC	SO-8
OP4177AR	–40°C to +125°C	14-Lead SOIC	R-14
OP4177ARU	–40°C to +125°C	14-Lead TSSOP	RU-14

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP1177/OP2177/OP4177 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. B

Typical Performance Characteristics–OP1177/OP2177/OP4177

	50
	VSY = 15V
	45
AMPLIFIERS	40
	35
	30
	25
OF
	20
NUMBER
	15
	10
	5
	0	30 20 10	0	10	20	30	40
	40

INPUT OFFSET VOLTAGE – V

TPC 1. Input Offset Voltage

Distribution

	90					VSY = 15V
	80
OF AMPLIFIERS	70
	60
	50
	40
NUMBER	30
	20
	10
	0
	0.05	0.15	0.25	0.35	0.45	0.55
			TCVOS – V/ C

TPC 2. Input Offset Voltage

Drift Distribution

	140
	VSY = 15V
	120
OF AMPLIFIERS	100
	80
	60
NUMBER
	40
	20
	0	0.1	0.2	0.3	0.4	0.5	0.6	0.7
	0
		INPUT BIAS CURRENT – nA

TPC 3. Input Bias Current

Distribution

1.8

1.6VSY = 15V

	1.4		TA = 25 C
V
–
VOLTAGE	1.2
	1.0
OUTPUT	0.8					SOURCE
	0.6
	0.4						SINK
	0.2
	0
	0.001				0.01													0.1						1							10
												LOAD CURRENT – mA
	TPC 4. Output Voltage to Supply
	Rail vs. Load Current
	120
	100																							VSY = 15V
																								VIN = 4mV p-p
dB	80																							CL = 0
																								RL =
–	60
GAIN	40		AV		= 100
LOOP-CLOSED	20		AV = 10
	0
			AV = 1
	20
	40
	60
	80
						10k								100k						1M						10M					100M
	1k

FREQUENCY – Hz

TPC 7. Closed-Loop Gain vs. Frequency

	3
							VSY	= 15V
– nA	2
	0
CURRENT
BIAS	1
	1
INPUT
	2
	3
			0		50		100			150
	50

TEMPERATURE – C

TPC 5. Input Bias Current vs.

	Temperature
	500
	450			VSY = 15V
				VIN = 50mV p-p
–	400
	350
IMPEDANCE			AV = 10
	300				AV = 1
	250		AV = 100
	200
OUTPUT
	150
	100
	50
	0	1k	10k	100k	1M
	100

FREQUENCY – Hz

TPC 8. Output Impedance vs. Frequency

60

0

VSY = 15V

50

CL = 0

RL =

dB–GAINLOOP-OPEN

0

135PHASESHIFT–Degrees

40

45

30

GAIN

90

20

10

PHASE

10

180

20

100k

1M

10M

FREQUENCY – Hz

TPC 6. Open-Loop Gain and

Phase Shift vs. Frequency

VSY = 15V

CL = 300pF

RL = 2k

VIN = 4V

VOLTAGE – 1V/DIV

AV = 1

GND

TIME – 100 s/DIV

TPC 9. Large Signal Transient

Response

REV. B

–5–

OP1177/OP2177/OP4177

VOLTAGE – 100mV/DIV

V	= 15V		50	V	= 15V				VSY = 15V
SY			45	SY					RL = 10k
CL = 1,000pF		– %		RL = 2k
RL = 2k			40	VIN = 100mV p-p					AV = 100
VIN = 100mV		OVERSHOOT						0V	VIN = 200mV
AV = 1			35
			30					15V	OUTPUT
		SIGNAL	25			+OS
			20
GND								+200mV
		SMALL	15
			10				OS	0V
			5						INPUT
			0		10	100	1k	10k
	TIME – 100 s/DIV		1						TIME – 10 s/DIV
					CAPACITANCE – pF

TPC 10. Small Signal Transient	TPC 11. Small Signal Overshoot vs.	TPC 12. Positive Overvoltage
Response	Load Capacitance	Recovery

15V

0V OUTPUT

VSY = 15V

RL = 10k

AV = 100

VIN = 200mV

0V

200mV

INPUT

TIME – 4 s/DIV

TPC 13. Negative Overvoltage

Recovery

VSY = 15V

0.2 V/DIV

–

NOISE

V

TIME – 1s/DIV

TPC 16. 0.1 Hz to 10 Hz Input Voltage Noise

	140								140
					VSY = 15V								VSY = 15V
	120								120			PSRR
	100								100
dB								dB			+PSRR
	80								80
–								–
CMRR	60							PSRR	60
	40								40
	20								20
	0								0	100	1k		100k	1M
	10	100	1k	10k	100k	1M	10M		10			10k			10M
			FREQUENCY – Hz								FREQUENCY – Hz
	TPC 14. CMRR vs. Frequency								TPC 15. PSRR vs. Frequency

	18							35
		VSY = 15V								V	= 15V
nV/Hz	14						mA–			SY
										ISC
	16							30
NOISEVOLTAGEDENSITY –							CIRCUITSHORTCURRENT
	4							5
								25
	12							20		ISC
	10
	8							15
	6							10
	2							0
	0	50	100	150	200	250		50	0	50	100	150
			FREQUENCY – Hz							TEMPERATURE – C

TPC 17. Voltage Noise Density

TPC 18. Short Circuit Current vs.

Temperature

–6–

REV. B