Analog Devices OP291GP, OP491GP, OP491GS, OP491GRU, OP291GS Datasheet

a		Micropower Single-Supply
		Rail-to-Rail Input/Output Op Amps
		OP191/OP291/OP491

FEATURES

Single-Supply Operation: 2.7 V to 12 V

Wide Input Voltage Range

Rail-to-Rail Output Swing

Low Supply Current: 300 A/Amp

Wide Bandwidth: 3 MHz

Slew Rate: 0.5 V/ s

Low Offset Voltage: 700 V

No Phase Reversal

APPLICATIONS

Industrial Process Control

Battery-Powered Instrumentation

Power Supply Control and Protection

Telecom

Remote Sensors

Low-Voltage Strain Gage Amplifiers

DAC Output Amplifier

GENERAL DESCRIPTION

The OP191, OP291, and OP491 are single, dual and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a 3 V single supply as well as ± 5 V dual supplies.

Fabricated on Analog Devices’ CBCMOS process, the OP191 family has a unique input stage that allows the input voltage to safely extend 10 V beyond either supply without any phase inversion or latch-up. The output voltage swings to within millivolts of the supplies and continues to sink or source current all the way to the supplies.

Applications for these amplifiers include portable telecom equipment, power supply control and protection, and interface for transducers with wide output ranges. Sensors requiring a rail-to-rail input amplifier include Hall effect, piezo electric, and resistive transducers.

The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and maintain high signal-to-noise ratios.

The OP191/OP291/OP491 are specified over the extended industrial (–40°C to +125°C) temperature range. The OP191 single and OP291 dual amplifiers are available in 8-lead plastic SO surface mount packages*. The OP491 quad is available in 14-lead DIPs and narrow 14-lead SO packages. Consult factory for OP491 TSSOP availability.

*The OP291 dual is also available in 8-lead Plastic Dip.

REV. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

			PIN CONFIGURATIONS
8-Lead Narrow-Body SO					8-Lead Narrow-Body SO
	1		8			1		8
	2	OP191	7			2	OP291	7
	3		6			3		6
	4		5			4		5

8-Lead Plastic DIP

OUTA	1	OP291	8	+V
–INA	2		7	OUTB
+INA	3		6	–INB
–V	4		5	+INB

14-Lead Plastic DIP

OUTA	1		14	OUTD
–INA	2		13	–IND
+INA	3		12	+IND
+V	4	OP491	11	–V
+INB	5		10	+INC
–INB	6		9	–INC
OUTB	7		8	OUTC

	14-Lead SO					14-Lead TSSOP
OUTA	1		14		OUTD	1		14
					–IND	2		13
–INA	2		13			3	OP491	12
					+IND
+INA	3	OP491	12			4		11
+V	4		11		–V	5		10
						6		9
+INB	5		10		+INC	7		8
					–INC
–INB	6		9
					OUTC
OUTB	7		8

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

OP191/OP291/OP491–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS(@ VS = +3.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25 C unless otherwise noted.)

Parameter		Symbol	Conditions	Min	Typ	Max	Unit
INPUT CHARACTERISTICS							µV
Offset Voltage	OP191G	VOS	–40°C ≤ TA ≤ +125°C		80	500
						1	mV
	OP291/OP491G	VOS	–40°C ≤ TA ≤ +125°C		80	700	µV
						1.25	mV
Input Bias Current		IB	–40°C ≤ TA ≤ +125°C		30	65	nA
Input Offset Current		IOS				95	nA
			–40°C ≤ TA ≤ +125°C		0.1	11	nA
						22	nA
Input Voltage Range				0		3	V
Common-Mode Rejection Ratio		CMRR	VCM = 0 V to 2.9 V	70	90		dB
			–40°C ≤ TA ≤ +125°C	65	87		dB
Large Signal Voltage Gain		AVO	RL = 10 kΩ , VO = 0.3 V to 2.7 V	25	70		V/mV
			–40°C ≤ TA ≤ +125°C		50		V/mV
Offset Voltage Drift		∆VOS/∆T			1.1		µV/°C
Bias Current Drift		∆IB/∆T			100		pA/°C
Offset Current Drift		∆IOS/∆T			20		pA/°C
OUTPUT CHARACTERISTICS			RL = 100 kΩ to GND
Output Voltage High		VOH		2.95	2.99		V
			–40°C to +125°C	2.90	2.98		V
			RL = 2 kΩ to GND	2.8	2.9		V
			–40°C to +125°C	2.70	2.8		V
Output Voltage Low		VOL	RL = 100 kΩ to V+		4.5	10	mV
			–40°C to +125°C			35	mV
			RL = 2 kΩ to V+		40	75	mV
			–40°C to +125°C	± 8.75	± 13.5	130	mV
Short Circuit Limit		ISC	Sink/Source				mA
			–40°C to +125°C	± 6.0	± 10.5		mA
Open-Loop Impedance		ZOUT	f = 1 MHz, AV = 1		200		Ω
POWER SUPPLY
Power Supply Rejection Ratio		PSRR	VS = 2.7 V to 12 V	80	110		dB
			–40°C ≤ TA ≤ +125°C	75	110		dB
Supply Current/Amplifier		ISY	VO = 0 V		200	350	µA
			–40°C ≤ TA ≤ +125°C		330	480	µA
DYNAMIC PERFORMANCE			RL = 10 kΩ				V/µs
Slew Rate		+SR			0.4
Slew Rate		–SR	RL = 10 kΩ		0.4		V/µs
Full-Power Bandwidth		BWP	1% Distortion		1.2		kHz
Settling Time		tS	To 0.01%		22		µs
Gain Bandwidth Product		GBP			3		MHz
Phase Margin		θO	f = 1 kHz, RL = 10 kΩ		45		Degrees
Channel Separation		CS			145		dB
NOISE PERFORMANCE							µV p-p
Voltage Noise		en p-p	0.1 Hz to 10 Hz		2
Voltage Noise Density		en	f = 1 kHz		35		nV/√Hz
Current Noise Density		in			0.8		pA/√Hz

Specifications subject to change without notice.

–2–

REV. A

OP191/OP291/OP491

ELECTRICAL SPECIFICATIONS (@ VS = +5.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25 C unless otherwise noted.)

Parameter	Symbol	Conditions		Min	Typ	Max	Unit
INPUT CHARACTERISTICS							µV
Offset Voltage OP191	VOS	–40°C ≤ TA ≤ +125°C			80	500
						1.0	mV
OP291/OP491	VOS	–40°C ≤ TA ≤ +125°C			80	700	µV
						1.25	mV
Input Bias Current	IB	–40°C ≤ TA ≤ +125°C			30	65	nA
						95	nA
Input Offset Current	IOS	–40°C ≤ TA ≤ +125°C			0.1	11	nA
						22	nA
Input Voltage Range				0		5	V
Common-Mode Rejection Ratio	CMRR	VCM = 0 V to 4.9 V		70	93		dB
		–40°C ≤ TA ≤ +125°C		65	90		dB
Large Signal Voltage Gain	AVO	RL = 10 kΩ , VO = 0.3 V to 4.7 V		25	70		V/mV
		–40°C ≤ TA	≤ +125°C		50		V/mV
Offset Voltage Drift	∆VOS/∆T	–40°C ≤ TA	≤ +125°C		1.1		µV/°C
Bias Current Drift	∆IB/∆T				100		pA/°C
Offset Current Drift	∆IOS/∆T				20		pA/°C
OUTPUT CHARACTERISTICS		RL = 100 kΩ to GND
Output Voltage High	VOH			4.95	4.99		V
		–40°C to +125°C		4.90	4.98		V
		RL = 2 kΩ to GND		4.8	4.85		V
		–40°C to +125°C		4.65	4.75		V
Output Voltage Low	VOL	RL = 100 kΩ to V+			4.5	10	mV
		–40°C to +125°C				35	mV
		RL = 2 kΩ to V+			40	75	mV
		–40°C to +125°C		± 8.75	± 13.5	155	mV
Short Circuit Limit	ISC	Sink/Source					mA
		–40°C to +125°C		± 6.0	± 10.5		mA
Open-Loop Impedance	ZOUT	f = 1 MHz, AV = 1			200		Ω
POWER SUPPLY
Power Supply Rejection Ratio	PSRR	VS = 2.7 V to 12 V		80	110		dB
		–40°C ≤ TA ≤ +125°C		75	110		dB
Supply Current/Amplifier	ISY	VO = 0 V			220	400	µA
		–40°C ≤ TA ≤ +125°C			350	500	µA
DYNAMIC PERFORMANCE		RL = 10 kΩ					V/µs
Slew Rate	+SR				0.4
Slew Rate	–SR	RL = 10 kΩ			0.4		V/µs
Full-Power Bandwidth	BWP	1% Distortion			1.2		kHz
Settling Time	tS	To 0.01%			22		µs
Gain Bandwidth Product	GBP				3		MHz
Phase Margin	θO	f = 1 kHz, RL = 10 kΩ			45		Degrees
Channel Separation	CS				145		dB
NOISE PERFORMANCE							µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz			2
Voltage Noise Density	en	f = 1 kHz			35		nV/√Hz
Current Noise Density	in				0.8		pA/√Hz

NOTE

+5 V specifications are guaranteed by +3 V and ± 5 V testing.

Specifications subject to change without notice.

REV. A

–3–

OP191/OP291/OP491

ELECTRICAL SPECIFICATIONS (@ VO = 5.0 V, –4.9 V ≤ VCM ≤ +4.9 V, TA = 25 C unless otherwise noted.)

Parameter		Symbol	Conditions	Min	Typ	Max	Unit
INPUT CHARACTERISTICS					80	500	µV
Offset Voltage	OP191	VOS	–40°C ≤ TA ≤ +125°C
						1	mV
	OP291/OP491	VOS	–40°C ≤ TA ≤ +125°C		80	700	µV
						1.25	mV
Input Bias Current		IB	–40°C ≤ TA ≤ +125°C		30	65	nA
						95	nA
Input Offset Current		IOS	–40°C ≤ TA ≤ +125°C		0.1	11	nA
						22	nA
Input Voltage Range			VCM = ± 5 V	–5		+5	V
Common-Mode Rejection		CMR		75	100		dB
			–40°C ≤ TA ≤ +125°C	67	97		dB
Large Signal Voltage Gain		AVO	RL = 10 kΩ, VO = ±4.7 V,	25	70
			–40°C ≤ TA ≤ +125°C		50		V/mV
Offset Voltage Drift		∆VOS/∆T			1.1		µV/°C
Bias Current Drift		∆IB/∆T			100		pA/°C
Offset Current Drift		∆IOS/∆T			20		pA/°C
OUTPUT CHARACTERISTICS			RL = 100 kΩ to GND	± 4.93	± 4.99
Output Voltage Swing		VO					V
			–40°C to +125°C	± 4.90	± 4.98		V
			RL = 2 kΩ to GND	± 4.80	± 4.95		V
			–40°C ≤ TA ≤ +125°C	± 4.65	± 4.75		V
Short Circuit Limit		ISC	Sink/Source	± 8.75	± 16		mA
			–40°C to +125°C	± 6	± 13		mA
Open-Loop Impedance		ZOUT	f = 1 MHz, AV = 1		200		Ω
POWER SUPPLY			VS = ± 5 V
Power Supply Rejection Ratio		PSRR		80	110		dB
			–40°C ≤ TA ≤ +125°C	70	100		dB
Supply Current/Amplifier		ISY	VO = 0 V		260	420	µA
			–40 ≤ TA ≤ +125°C		390	550	µA
DYNAMIC PERFORMANCE		± SR	RL =10 kΩ		0.5		V/µs
Slew Rate
Full-Power Bandwidth		BWP	1% Distortion		1.2		kHz
Settling Time		tS	To 0.01%		22		µs
Gain Bandwidth Product		GBP			3		MHz
Phase Margin		θO			45		Degrees
Channel Separation		CS	f = 1 kHz		145		dB
NOISE PERFORMANCE		en p-p	0.1 Hz to 10 Hz		2		µV p-p
Voltage Noise
Voltage Noise Density		en	f = 1 kHz		35		nV/√Hz
Current Noise Density		in			0.8		pA/√Hz

Specifications subject to change without notice.

5V

100

90

INPUT

OUTPUT

10 0%

5V

VS = 5V

RL = 2k

AV = +1

VIN = 20V p-p

200 s

Figure 1. Input and Output with Inputs Overdriven by 5 V
–4–	REV. A

OP191/OP291/OP491

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . GND to VS 10 V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite Storage Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range

OP191/OP291/OP491G . . . . . . . . . . . . . . . –40°C to +125°C Junction Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C

Package Type	JA2	JC	Units
8-Lead Plastic DIP (P)	103	43	°C/W
8-Lead SOIC (S)	158	43	°C/W
14-Lead Plastic DIP (P)	76	33	°C/W
14-Lead SOIC (S)	120	36	°C/W
14-Lead TSSOP (RU)	180	35	°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2θJA is specified for the worst case conditions; i.e., θJA is specified for device in socket for P-DIP packages; θJA is specified for device soldered in circuit board for TSSOP and SOIC packages.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
OP191GS	-40 C to +125 C	8-Lead SOIC	SO-8
OP291GP*	-40 C to +125 C	8-Lead Plastic DIP	N-8
OP291GS	-40 C to +125 C	8-Lead SOIC	SO-8
OP491GP	-40 C to +125 C	14-Lead Plastic DIP	N-14
OP491GS	-40 C to +125 C	14-Lead SOIC	SO-14
OP491GRU	-40 C to +125 C	14-Lead TSSOP	RU-14

*Not for new design; obsolete April 2002.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP191/OP291/OP491 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. A

–5–

OP191/OP291/OP491–Typical Performance Characteristics

	180
	160	VS = +3V
		TA = 25 C
	140	BASED ON
		1200 OP AMPS
	120
UNITS	100
	80
	60
	40
	20
	0					0.14
	–0.18		–0.10	–0.02	0.06		0.22

INPUT OFFSET VOLTAGE – mV

TPC 1. OP291 Input Offset Voltage Distribution, VS = +3 V

	40		VCM = 3V
	30
– nA	20		VCM = 2.9V
	10
CURRENT
	0	VS = +3V
	–10
			VCM = 0.1V
BIAS	–20
	–30
INPUT
	–40		VCM = 0V
	–50
	–60
	–40	25	85	125
		TEMPERATURE – C

	120
				VS = +3V
	100			–40 C < TA < +125 C
				BASED ON 600 OP AMPS
	80
UNITS	60
	40
	20
	0	1	2	3	4	5	6	7
	0
		INPUT OFFSET VOLTAGE – V/ C

TPC 2. OP291 Input Offset Volt-
age Drift Distribution, VS = +3 V
	0
	–0.2
nA	VS = +3V		VCM = 0.1V
	–0.4
–			VCM = 2.9V
CURRENT	–0.6
			VCM = 3V
	–0.8
	–1.0
OFFSET
	–1.2		VCM = 0V
INPUT	–1.4
	–1.6
	–1.8
	–40	25	85	125
	TEMPERATURE – C

	0	VS = +3V
– mV	–0.02		VCM = 0.1V
	–0.04
VOLTAGE
	–0.06		VCM = 0V
			VCM = 3V
OFFSET	–0.08
	–0.10
INPUT
			VCM = 2.9V
	–0.12
	–0.14		85
	–40	25		125
		TEMPERATURE – C

TPC 3. Input Offset Voltage vs. Temperature, VS = +3 V

36

30 VS = +3V

	nA	24
		18
	–	12
	CURRENT
		6
		0
	BIAS	–6
		–12
	INPUT	–24
		–18

–30

–36

00.30 0.60 0.90 1.2 1.5 1.8 2.1 2.4 2.7 3.0 INPUT COMMON-MODE VOLTAGE – V

TPC 4. Input Bias Current vs. Temperature, VS = +3 V

TPC 5. Input Offset Current vs. Temperature, VS = +3 V

TPC 6. Input Bias Current vs. Com- mon-Mode Voltage, VS = +3 V

	3.00
			+VO @ RL = 100k
	2.95
– V
SWING	2.90
		+VO @ RL	= 2k
OUTPUT
	2.85
	2.80
		VS = +3V
	2.75
	–40	25	85	125
		TEMPERATURE – C

TPC 7. Output Voltage Swing vs. Temperature, VS = +3 V

	160								1200
	140			VS = +3V						R	L	= 100k ,
				TA	= 25 C				1000	V			= 2.9V
	120									CM
OPEN-LOOP GAIN – dB								OPEN-LOOP GAIN –V/mV
	100								800	RL = 100k ,
							PHASE SHIFT – C			VCM = 0.1V
	80					0
	60					45			600
	40					90
	20					135			400
	0					180			200
	–20					225					VS = 3V, VO = 0.3V/2.7V
						270
	–40								0
	100	1k	10k	100k	1M	10M			–40	25			85	125
			FREQUENCY – Hz							TEMPERATURE – C

TPC 8. Open-Loop Gain and Phase	TPC 9. Open-Loop Gain vs.
vs. Frequency, VS = +3 V	Temperature, VS = +3 V

–6–

REV. A