Analog Devices OP491, OP291, OP191 Datasheet

a		Micropower Single-Supply
		Rail-to-Rail Input/Output Op Amps
		OP191/OP291/OP491

FEATURES

Single-Supply Operation: 2.7 V to 12 V

Wide Input Voltage Range

Rail-to-Rail Output Swing

Low Supply Current: 300 μA/Amp

Wide Bandwidth: 3 MHz

Slew Rate: 0.5 V/μs

Low Offset Voltage: 700 μV

No Phase Reversal

APPLICATIONS

Industrial Process Control

Battery Powered Instrumentation

Power Supply Control and Protection

Telecom

Remote Sensors

Low Voltage Strain Gage Amplifiers

DAC Output Amplifier

GENERAL DESCRIPTION

The OP191, OP291 and OP491 are single, dual and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a 3 volt single supply as well as ±5 volt dual supplies.

Fabricated on Analog Devices’ CBCMOS process, the OP191 family has a unique input stage that allows the input voltage to safely extend 10 volts beyond either supply without any phase inversion or latch-up. The output voltage swings to within millivolts of the supplies and continues to sink or source current all the way to the supplies.

Applications for these amplifiers include portable telecom equipment, power supply control and protection, and interface for transducers with wide output ranges. Sensors requiring a rail-to-rail input amplifier include Hall effect, piezo electric, and resistive transducers.

The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and maintain high signal-to-noise ratios.

The OP191/OP291/OP491 are specified over the extended industrial (–40°C to +125°C) temperature range. The OP191 single and OP291 dual amplifiers are available in 8-pin plastic DIPs and SO surface mount packages. The OP491 quad is available in 14-pin DIPs and narrow 14-pin SO packages. Consult factory for OP491 TSSOP availability.

REV. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

OP191/OP291/OP491 PIN CONFIGURATIONS

8-Lead Narrow-Body SO	8-Lead Epoxy DIP
(S Suffix)	(P Suffix)

	1		8	NC	1	OP191	8	NC
	2	OP191	7
				–INA	2		7	V+
	3		6
	4		5	+INA	3		6	OUTA
				–V	4		5	NC
						NC = NO CONNECT

8-Lead Narrow-Body SO	8-Lead Epoxy DIP
(S Suffix)	(P Suffix)

1		8	OUTA	1	OP291	8	+V
32		67
	OP291		–INA	2		7	OUTB
4		5	+INA	3		6	–INB
			–V	4		5	+INB

14-Lead Epoxy DIP

(P Suffix)

OUTA	1		14	OUTD
–INA	2		13	–IND
+INA	3		12	+IND
+V	4	OP491	11	–V
+INB	5		10	+INC
–INB	6		9	–INC
OUTB	7		8	OUTC

14-Lead SO

(S Suffix)

OUTA	1		14	OUTD
–INA				–IND
	2		13
				+IND
+INA	3		12
+V				–V
	4	OP491	11
+INB	5		10	+INC
				–INC
–INB	6		9
				OUTC
OUTB	7		8

14-Lead TSSOP (RU Suffix)

1

14

213

312

4

OP491

11

510

69

78

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: [phone] Fax: [phone]

OP191/OP291/OP491–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS(@ VS = +3.0 V, VCM = 0.1 V, VO = 1.4 V, TA = +25°C unless otherwise noted)

Parameter		Symbol	Conditions	Min	Typ	Max	Units
INPUT CHARACTERISTICS							mV
Offset Voltage	OP191G	VOS	–40 £ TA £ +125°C		80	500
						1	mV
	OP291/OP491G	VOS	–40 £ TA £ +125°C		80	700	mV
Input Bias Current		IB				1.25	mV
			–40 £ TA £ +125°C		30	50	nA
Input Offset Current		IOS				70	nA
			–40 £ TA £ +125°C		0.1	8	nA
						16	nA
Input Voltage Range				0		3	V
Common-Mode Rejection Ratio		CMRR	VCM = 0 V to 2.9 V	70	90		dB
			–40 £ TA £ +125°C	65	87		dB
Large Signal Voltage Gain		AVO	RL = 10 kW , VO = 0.3 V to 2.7 V	25	70		V/mV
		DVOS/DT	–40 £ TA £ +125°C		50		V/mV
Offset Voltage Drift					1.1		mV/°C
Bias Current Drift		DIB/DT			100		pA/°C
Offset Current Drift		DIOS/DT			20		pA/°C
OUTPUT CHARACTERISTICS			RL = 100 kW to GND
Output Voltage High		VOH		2.95	2.99		V
			–40°C to +125°C	2.90	2.98		V
			RL = 2 kW to GND	2.8	2.9		V
			–40°C to +125°C	2.70	2.8		V
Output Voltage Low		VOL	RL = 100 kW to V+		4.5	10	mV
			–40°C to +125°C			35	mV
			RL = 2 kW to V+		40	75	mV
Short Circuit Limit		ISC	–40°C to +125°C	± 8.75	± 13.5	130	mV
			Sink/Source				mA
			–40°C to +125°C	± 6.0	± 10.5		mA
Open Loop Impedance		ZOUT	f = 1 MHz, AV = 1		200		W
POWER SUPPLY
Power Supply Rejection Ratio		PSRR	VS = 2.7 V to 12 V	80	110		dB
			–40°C £ TA £ +125°C	75	110		dB
Supply Current/Amplifier		ISY	VO = 0 V		200	350	mA
			–40°C £ TA £ +125°C		330	480	mA
DYNAMIC PERFORMANCE			RL = 10 kW				V/ms
Slew Rate		+SR			0.4
Slew Rate		–SR	RL = 10 kW		0.4		V/ms
Full-Power Bandwidth		BWP	1% Distortion		1.2		kHz
Settling Time		tS	To 0.01%		22		ms
Gain Bandwidth Product		GBP			3		MHz
Phase Margin		qO	f = 1 kHz, RL = 10 kW		45		Degrees
Channel Separation		CS			145		dB
NOISE PERFORMANCE							mV p-p
Voltage Noise		en p-p	0.1 Hz to 10 Hz		2
Voltage Noise Density		en	f = 1 kHz		35		nV/Ö	Hz
Current Noise Density		in			0.8		pA/ÖHz

Specifications subject to change without notice.

–2–

REV. 0

OP191/OP291/OP491

ELECTRICAL SPECIFICATIONS (@ VS = +5.0 V, VCM = 0.1 V, VO = 1.4 V, TA = +25°C unless otherwise noted)

Parameter		Symbol	Conditions		Min	Typ	Max	Units
INPUT CHARACTERISTICS								mV
Offset Voltage	OP191	VOS	–40 £ TA £ +125°C			80	500
							1.0	mV
	OP291/OP491	VOS	–40 £ TA £ +125°C			80	700	mV
Input Bias Current		IB					1.25	mV
			–40 £ TA £ +125°C			30	50	nA
Input Offset Current		IOS					60	nA
			–40 £ TA £ +125°C			0.1	8	nA
							16	nA
Input Voltage Range					0		5	V
Common-Mode Rejection Ratio		CMRR	VCM = 0 V to 4.9 V		70	93		dB
			–40 £ TA £ +125°C		65	90		dB
Large Signal Voltage Gain		AVO	RL = 10 kW , VO = 0.3 V to 4.7 V		25	70		V/mV
		DVOS/DT	–40 £ TA	£ +125°C		50		V/mV
Offset Voltage Drift			–40 £ TA	£ +125°C		1.1		mV/°C
Bias Current Drift		DIB/DT				100		pA/°C
Offset Current Drift		DIOS/DT				20		pA/°C
OUTPUT CHARACTERISTICS			RL = 100 kW to GND
Output Voltage High		VOH			4.95	4.99		V
			–40°C to +125°C		4.90	4.98		V
			RL = 2 kW to GND		4.8	4.85		V
			–40°C to +125°C		4.65	4.75		V
Output Voltage Low		VOL	RL = 100 kW to V+			4.5	10	mV
			–40°C to +125°C				35	mV
			RL = 2 kW to V+			40	75	mV
Short Circuit Limit		ISC	–40°C to +125°C		± 8.75	± 13.5	155	mV
			Sink/Source					mA
			–40°C to +125°C		± 6.0	± 10.5		mA
Open Loop Impedance		ZOUT	f = 1 MHz, AV = 1			200		W
POWER SUPPLY
Power Supply Rejection Ratio		PSRR	VS = 2.7 V to 12 V		80	110		dB
			–40 £ TA	£ +125°C	75	110		dB
Supply Current/Amplifier		ISY	VO = 0 V			220	400	mA
			–40 £ TA £ +125°C			350	500	mA
DYNAMIC PERFORMANCE			RL = 10 kW					V/ms
Slew Rate		+SR				0.4
Slew Rate		–SR	RL = 10 kW			0.4		V/ms
Full-Power Bandwidth		BWP	1% Distortion			1.2		kHz
Settling Time		tS	To 0.01%			22		ms
Gain Bandwidth Product		GBP				3		MHz
Phase Margin		qO	f = 1 kHz, RL = 10 kW			45		Degrees
Channel Separation		CS				145		dB
NOISE PERFORMANCE								mV p-p
Voltage Noise		en p-p	0.1 Hz to 10 Hz			2
Voltage Noise Density		en	f = 1 kHz			35		nV/Ö	Hz
Current Noise Density		in				0.8		pA/ÖHz

NOTES

+5 V specifications are guaranteed by +3 V and ±5 V testing. Specifications subject to change without notice.

REV. 0

–3–

OP191/OP291/OP491

ELECTRICAL SPECIFICATIONS (@ VO = ±5.0 V, –4.9 V ≤ VCM ≤ +4.9 V, TA = +25°C unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

mV

Offset Voltage

OP191

VOS

–40 £ TA £ +125°C

80

500

1

mV

OP291/OP491

VOS

–40 £ TA £ +125°C

80

700

mV

Input Bias Current

IB

1.25

mV

–40 £ TA £ +125°C

30

50

nA

Input Offset Current

IOS

70

nA

–40 £ TA £ +125°C

0.1

8

nA

16

nA

Input Voltage Range

VCM = ± 5 V

–5

+5

V

Common-Mode Rejection

CMR

75

100

dB

–40 £ TA £ +125°C

67

97

dB

Large Signal Voltage Gain

AVO

RL = 10 kW, VO = ±4.7 V,

25

70

DVOS/DT

–40 £ TA £ +125°C

50

V/mV

Offset Voltage Drift

1.1

mV/°C

Bias Current Drift

DIB/DT

100

pA/°C

Offset Current Drift

DIOS/DT

20

pA/°C

OUTPUT CHARACTERISTICS

RL = 100 kW to GND

± 4.93

± 4.99

Output Voltage Swing

VO

V

–40°C to +125°C

± 4.90

± 4.98

V

RL = 2 kW to GND

± 4.80

± 4.95

V

–40 £ TA £ +125°C

± 4.65

± 4.75

V

Short Circuit Limit

ISC

Sink/Source

± 8.75

± 16

mA

–40°C to +125°C

± 6

± 13

mA

Open Loop Impedance

ZOUT

f = 1 MHz, AV = 1

200

W

POWER SUPPLY

VS = ± 5 V

Power Supply Rejection Ratio

PSRR

80

110

dB

–40 £ TA £ +125°C

70

100

dB

Supply Current/Amplifier

ISY

VO = 0 V

260

420

mA

–40 £ TA £ +125°C

390

550

mA

DYNAMIC PERFORMANCE

± SR

RL =10 kW

V/ms

Slew Rate

0.5

Full-Power Bandwidth

BWP

1% Distortion

1.2

kHz

Settling Time

tS

To 0.01%

22

ms

Gain Bandwidth Product

GBP

3

MHz

Phase Margin

qO

45

Degrees

Channel Separation

CS

f = 1 kHz

145

dB

NOISE PERFORMANCE

mV p-p

Voltage Noise

en p-p

0.1 Hz to 10 Hz

2

Voltage Noise Density

en

f = 1 kHz

35

nV/Ö

Hz

Current Noise Density

in

0.8

pA/Ö

Hz

Specifications subject to change without notice.

5V

VS = ±5V

100

RL = 2kΩ

AV = +1

90

VIN = 20Vp-p

INPUT

OUTPUT

10

0%

200µs

5V

Figure 1. Input and Output with Inputs Overdriven by 5 V

–4–

REV. 0

OP191/OP291/OP491

WAFER TEST LIMITS (@ VS = +3.0 V, VCM = 0.1 V, TA = +25°C unless otherwise noted)

Parameter	Symbol	Conditions	Limit	Units
Offset Voltage	VOS		±300	μV max
Input Bias Current	IB		50	nA max
Input Offset Current	IOS		8	nA
Input Voltage Range	VCM		V– to V+	V min
Common-Mode Rejection Ratio	CMRR	VCM = 0 V to +2.9 V	70	dB min
Power Supply Rejection Ratio	PSRR	V = 2.7 V to +12 V	80	dB min
Large Signal Voltage Gain	AVO	RL = 10 kΩ	50	V/mV min
Output Voltage High	VOH	RL = 2 kΩ to GND	2.8	V min
Output Voltage Low	VOL	RL = 2 kΩ to V+	75	mV max
Supply Current/Amplifier	ISY	VO = 0 V, RL = ∞	350	μA max

NOTE

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .GND to VS + 10 V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite Storage Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range

OP191/OP291/OP491G . . . . . . . . . . . . . . . –40°C to +125°C Junction Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C

Package Type	θJA2	θJC	Units
8-Pin Plastic DIP (P)	103	43	°C/W
8-Pin SOIC (S)	158	43	°C/W
14-Pin Plastic DIP (P)	76	33	°C/W
14-Pin SOIC (S)	120	36	°C/W
14-Pin TSSOP (RU)	180	35	°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2θJA is specified for the worst case conditions; i.e., θJA is specified for device in socket for P-DIP packages; θJA is specified for device soldered in circuit board for TSSOP and SOIC packages.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
OP191GP	–40°C to +125°C	8-Pin Plastic DIP	N-8
OP191GS	–40°C to +125°C	8-Pin SOIC	SO-8
OP191GBC	+25°C	DICE
OP291GP	–40°C to +125°C	8-Pin Plastic DIP	N-8
OP291GS	–40°C to +125°C	8-Pin SOIC	SO-8
OP291GBC	+25°C	DICE
OP491GP	–40°C to +125°C	14-Pin Plastic DIP	N-14
OP491GS	–40°C to +125°C	14-Pin SOIC	SO-14
OP491HRU	–40°C to +125°C	14-Pin TSSOP	RU-14
OP491GBC	+25°C	DICE

2

1

14

13

DICE CHARACTERISTICS

7

2

6

3

4

OP191 Die Size 0.047 × 0.066 Inch, 3,102 Sq. Mils. Substrate (Die Backside) Is Connected to V+.

Transistor Count, 74.

1				8		7
2										6
3										5
				4

OP291 Die Size 0.070 × 0.070 Inch, 4,900 Sq. Mils. Substrate (Die Backside) Is Connected to V+.

Transistor Count, 146

3					12
4					11

5											10
6				7		8		9

OP491 Die Size 0.070 × 0.110 Inch, 7,700 Sq. Mils. Substrate (Die Backside) Is Connected to V+. Transistor Count, 290.

REV. 0

–5–

OP191/OP291/OP491–Typical Performance Characteristics

UNITS

180

VS = +3V 160 TA = +25°C

BASED ON 1200 140 OP AMPS

120

100

80

60

40

20

0 –0.18 –0.10 –0.02 0.06 0.14 0.22

INPUT OFFSET VOLTAGE – mV

UNITS

120

VS = +3V

100 –40°C < TA < +125°C

BASED ON 600 OP AMPS

80

60
40
20
0
0	1	2	3	4	5	6	7
		INPUT OFFSET VOLTAGE – µV/ °C

	0
	VS = +3V
– mV	–0.02		VCM = 0.1V
VOLTAGE	–0.04
	–0.06		VCM = 0V
			VCM = 3V
OFFSET
	–0.08
	–0.1
INPUT
			VCM = 2.9V
	–0.12
	–0.14		85
	–40	25		125
		TEMPERATURE – °C

Figure 2. OP291 Input Offset Voltage

Distribution, VS = +3 V
	40		VCM = 3V
	30
nA	20		VCM = 2.9V
–	10
CURRENT
	0	VS = +3V
	–10
BIAS	–20		VCM = 0.1V
INPUT	–30
	–40
	–50		VCM = 0V
	–60
	–40	25	85	125
		TEMPERATURE – °C

Figure 5. Input Bias Current vs.

Temperature, VS = +3 V
	3.00
		+VO @ RL = 100k
– Volts	2.95
	2.90
SWING
		+VO @ RL = 2k
OUTPUT	2.85
	2.80
		VS = +3V
	2.75
	–40	25	85	125
		TEMPERATURE – °C

Figure 8. Output Voltage Swing vs. Temperature, VS = +3 V

Figure 3. OP291 Input Offset Volt-

Figure 4. Input Offset Voltage vs.

age Drift Distribution, VS = +3 V

Temperature, VS = +3 V

0

36

nA–

–0.2

VS = +3V

nA

30

VS = +3V

–0.4

VCM = 0.1V

24

CURRENTOFFSETINPUT

VCM = 2.9V

CURRENTBIASINPUT–

18

–24

–0.6

VCM = 3V

12

–0.8

6

VCM = 0V

–1.0

0

–6

–1.2

–12

–1.4

–18

–1.6

–30

–1.8

–36

–40

25

85

125

0

0.30 0.60 0.90 1.2

1.5

1.8

2.1

2.4

2.7

3.0

INPUT COMMON MODE VOLTAGE – Volts

TEMPERATURE – °C

Figure 6. Input Offset Current	Figure 7. Input Bias Current vs.
vs. Temperature, VS = +3 V	Common-Mode Voltage, VS = +3 V

	160								1200
	140				VS = +3V					RL = 100kΩ,
					°				1000	VCM = 2.9V
					TA = +25 C
dB–GAINLOOP-OPEN	120						Degrees–SHIFTPHASE	–V/mVGAINLOOP-OPEN		RL = 100kΩ,
	100								800
										VCM = 0.1V
	80					0
	60					45			600
	40					90			400
	20					135
	0					180			200
	–20					225				VS = 3V, VO = 0.3V / 2.7V
	–40	1k	10k	100k	1M	270			0	25	85	125
	100					10M			–40
			FREQUENCY – Hz							TEMPERATURE – °C

Figure 9. Open-Loop Gain & Phase	Figure 10. Open-Loop Gain vs.
vs. Frequency, VS = +3 V	Temperature, VS = +3 V

–6–

REV. 0