Analog Devices OP196, OP496, OP296 Datasheet

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Analog Devices OP196, OP496, OP296 Datasheet

a

Micropower, Rail-to-Rail Input and Output

Operational Amplifiers

 

 

 

 

 

OP196/OP296/OP496

 

 

 

FEATURES

Rail-to-Rail Input and Output Swing

Low Power: 60 mA/Amplifier

Gain Bandwidth Product: 450 kHz

Single-Supply Operation: +3 V to +12 V

Low Offset Voltage: 300 mV max

High Open-Loop Gain: 500 V/mV

Unity-Gain Stable

No Phase Reversal

APPLICATIONS

Battery Monitoring

Sensor Conditioners

Portable Power Supply Control

Portable Instrumentation

GENERAL DESCRIPTION

The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges.

The extremely low power requirements and guaranteed operation from +3 V to +12 V make these amplifiers perfectly suited to monitor battery usage and to control battery charging. Their dynamic performance, including 26 nV/ÖHz voltage noise density, recommends them for battery-powered audio applications. Capacitive loads to 200 pF are handled without oscillation.

PIN CONFIGURATIONS

8-Lead Narrow-Body SO

8-Lead Plastic DIP

NULL

1

 

8

NC

NULL

1

OP196

8

NC

–IN A

2

 

7

V+

OP196

 

 

 

 

+IN A

3

6

OUT A

–IN A

2

 

7

V+

V–

4

 

5

NULL

+IN A

3

 

6

OUT A

NC = NO CONNECT

V–

4

 

5

NULL

 

 

 

 

 

 

 

NC = NO CONNECT

 

 

8-Lead Narrow-Body SO

8-Lead Plastic DIP

OUT A

1

 

8

V+

OUT A

1

OP296

8

V+

–IN A

2

OP296

7

OUT B

 

 

 

 

 

+IN A

3

6

–IN B

–IN A

2

 

7

OUT B

V–

4

 

5

+IN B

+IN A

3

 

6

–IN B

 

 

 

 

 

 

 

 

 

 

 

V–

4

 

5

+IN B

8-Lead TSSOP

1

 

8

V+

OUT A

 

 

 

–IN A

 

OP296

 

OUT B

+IN A

 

 

–IN B

V–

 

 

 

+IN B

 

4

 

5

 

 

 

 

The OP196/OP296/OP496 are specified over the HOT extended industrial (–40°C to +125°C) temperature range. +3 V operation is specified over the 0°C to +125°C temperature range.

The single OP196 and the dual OP296 are available in 8-lead plastic DIP and SO-8 surface mount packages. The quad OP496 is available in 14-lead plastic DIP and narrow SO-14 surface mount packages.

14-Lead Narrow-Body SO

 

 

 

 

 

OUT A

1

 

14

OUT D

–IN A

 

 

 

–IN D

2

 

13

+IN A

 

 

 

+IN D

3

 

12

+V

 

OP496

 

V–

4

11

+IN B

 

 

 

+IN C

5

 

10

–IN B

 

 

 

–IN C

6

 

9

OUT B

 

 

 

OUT C

7

 

8

 

 

 

 

 

14-Lead Plastic DIP

OUT A

1

 

14

OUT D

–IN A

2

 

13

–IN D

+IN A

3

 

12

+IN D

+V

4

OP496

11

V–

+IN B

5

 

10

+IN C

–IN B

6

 

9

–IN C

OUT B

7

 

8

OUT C

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

14-Lead TSSOP

(RU Suffix)

 

1

 

14

OUT A

 

 

 

OUT D

–IN A

 

 

 

–IN D

+IN A

 

OP496

 

+IN D

V+

 

 

V–

+IN B

 

 

 

+IN C

–IN B

 

 

 

–IN C

OUT B

 

 

 

OUT C

 

7

 

8

 

 

 

 

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

World Wide Web Site: http://www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 1998

OP196/OP296/OP496–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS (@ VS = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted)

Parameter

Symbol

Conditions

 

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

INPUT CHARACTERISTICS

 

 

 

 

 

 

mV

Offset Voltage

VOS

OP196G, OP296G, OP496G

 

35

300

 

 

–40°C £ TA £ +125°C

 

 

650

mV

 

 

OP296H, OP496H

 

 

800

mV

 

 

–40°C £ TA

£ +125°C

 

 

1.2

mV

Input Bias Current

IB

–40°C £ TA

£ +125°C

 

± 10

± 50

nA

Input Offset Current

IOS

 

 

 

± 1.5

± 8

nA

 

 

–40°C £ TA £ +125°C

 

 

± 20

nA

Input Voltage Range

VCM

0 V £ VCM £ 5.0 V,

0

 

+5.0

V

Common-Mode Rejection Ratio

CMRR

 

 

 

 

 

 

 

 

–40°C £ TA

£ +125°C

65

 

 

dB

Large Signal Voltage Gain

AVO

RL = 100 kW,

 

 

 

 

 

 

 

 

0.30 V £ VOUT £ 4.7 V,

 

 

 

 

 

 

 

 

–40°C £ TA

£ +125°C

150

200

 

V/mV

Long-Term Offset Voltage

VOS

G Grade, Note 1

 

 

550

mV

 

 

H Grade, Note 1

 

 

1

mV

Offset Voltage Drift

DVOS/DT

G Grade, Note 2

 

1.5

 

mV/°C

 

 

H Grade, Note 2

 

2

 

mV/°C

OUTPUT CHARACTERISTICS

 

IL = –100 mA

 

 

 

 

 

 

Output Voltage Swing High

VOH

4.85

4.92

 

V

 

 

IL = 1 mA

 

4.30

4.56

 

V

 

 

IL = 2 mA

 

 

4.1

 

V

Output Voltage Swing Low

VOL

IL = –1 mA

 

 

36

70

mV

 

 

IL = –1 mA

 

 

350

550

mV

 

 

IL = –2 mA

 

 

750

 

mV

Output Current

IOUT

 

 

 

± 4

 

mA

POWER SUPPLY

 

± 2.5 V £ VS

£ ±6 V,

 

 

 

 

 

 

Power Supply Rejection Ratio

PSRR

 

 

 

 

 

 

 

 

–40°C £ TA

£ +125°C

85

 

 

dB

Supply Current per Amplifier

ISY

VOUT = 2.5 V, RL =

 

 

60

mA

 

 

–40°C £ TA £ +125°C

 

45

80

mA

DYNAMIC PERFORMANCE

 

RL = 100 kW

 

 

 

V/ms

Slew Rate

SR

 

0.3

 

Gain Bandwidth Product

GBP

 

 

 

350

 

kHz

Phase Margin

øm

 

 

 

47

 

Degrees

NOISE PERFORMANCE

 

 

 

 

 

 

mV p-p

Voltage Noise

en p-p

0.1 Hz to 10 Hz

 

0.8

 

Voltage Noise Density

en

f = 1 kHz

 

 

26

 

nV/Ö

Hz

 

Current Noise Density

in

f = 1 kHz

 

 

0.19

 

pA/Ö

Hz

 

NOTES

1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

–2–

REV. B

OP196/OP296/OP496

ELECTRICAL SPECIFICATIONS (@ VS = +3.0 V, VCM = +1.5 V, TA = +258C unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

INPUT CHARACTERISTICS

 

 

 

 

 

mV

Offset Voltage

VOS

OP196G, OP296G, OP496G

 

35

300

 

 

0°C £ TA £ +125°C

 

 

650

mV

 

 

OP296H, OP496H

 

 

800

mV

 

 

0°C £ TA £ +125°C

 

 

1.2

mV

Input Bias Current

IB

 

 

± 10

± 50

nA

Input Offset Current

IOS

 

 

± 1

± 8

nA

Input Voltage Range

VCM

0 V £ VCM £ 3.0 V,

0

 

+3.0

V

Common-Mode Rejection Ratio

CMRR

 

 

 

 

 

 

 

 

0°C £ TA £ +125°C

60

 

 

dB

Large Signal Voltage Gain

AVO

RL = 100 kW

80

200

 

V/mV

Long-Term Offset Voltage

VOS

G Grade, Note 1

 

 

550

mV

 

 

H Grade, Note 1

 

 

1

mV

Offset Voltage Drift

DVOS/DT

G Grade, Note 2

 

1.5

 

mV/°C

 

 

H Grade, Note 2

 

2

 

mV/°C

OUTPUT CHARACTERISTICS

 

IL = 100 mA

 

 

 

 

 

 

Output Voltage Swing High

VOH

2.85

 

 

V

Output Voltage Swing Low

VOL

IL = –100 mA

 

 

70

mV

POWER SUPPLY

 

VOUT = 1.5 V, RL =

 

 

 

mA

Supply Current per Amplifier

ISY

 

40

60

 

 

0°C £ TA £ +125°C

 

 

80

mA

DYNAMIC PERFORMANCE

 

RL = 100 kW

 

 

 

V/ms

Slew Rate

SR

 

0.25

 

Gain Bandwidth Product

GBP

 

 

350

 

kHz

Phase Margin

øm

 

 

45

 

Degrees

NOISE PERFORMANCE

 

 

 

 

 

mV p-p

Voltage Noise

en p-p

0.1 Hz to 10 Hz

 

0.8

 

Voltage Noise Density

en

f = 1 kHz

 

26

 

nV/Ö

Hz

 

Current Noise Density

in

f = 1 kHz

 

0.19

 

pA/Ö

Hz

 

NOTES

1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the 0°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

REV. B

–3–

OP196/OP296/OP496

ELECTRICAL SPECIFICATIONS (@ VS = +12.0 V, VCM = +6 V, TA = +258C unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

INPUT CHARACTERISTICS

 

 

 

 

 

mV

Offset Voltage

VOS

OP196G, OP296G, OP496G

 

35

300

 

 

0°C £ TA £ +125°C

 

 

650

mV

 

 

OP296H, OP496H

 

 

800

mV

 

 

0°C £ TA £ +125°C

 

 

1.2

mV

Input Bias Current

IB

–40°C £ TA £ +125°C

 

± 10

± 50

nA

Input Offset Current

IOS

 

 

± 1

± 8

nA

 

 

–40°C £ TA £ +125°C

 

 

± 15

nA

Input Voltage Range

VCM

0 V £ VCM £ +12 V,

0

 

+12

V

Common-Mode Rejection Ratio

CMRR

 

 

 

 

 

 

 

 

–40°C £ TA £ +125°C

65

 

 

dB

Large Signal Voltage Gain

AVO

RL = 100 kW

300

1000

 

V/mV

Long-Term Offset Voltage

VOS

G Grade, Note 1

 

 

550

mV

 

 

H Grade, Note 1

 

 

1

mV

Offset Voltage Drift

DVOS/DT

G Grade, Note 2

 

1.5

 

mV/°C

 

 

H Grade, Note 2

 

2

 

mV/°C

OUTPUT CHARACTERISTICS

 

IL = 100 mA

 

 

 

 

 

 

Output Voltage Swing High

VOH

11.85

 

 

V

 

 

IL = 1 mA

11.30

 

 

V

Output Voltage Swing Low

VOL

IL = –1 mA

 

 

70

mV

 

 

IL = –1 mA

 

± 4

550

mV

Output Current

IOUT

 

 

 

mA

POWER SUPPLY

 

VOUT = 6 V, RL =

 

 

 

mA

Supply Current per Amplifier

ISY

 

 

60

 

 

–40°C £ TA £ +125°C

 

 

80

mA

Supply Voltage Range

VS

 

+3

 

+12

V

DYNAMIC PERFORMANCE

 

RL = 100 kW

 

 

 

V/ms

Slew Rate

SR

 

0.3

 

Gain Bandwidth Product

GBP

 

 

450

 

kHz

Phase Margin

øm

 

 

50

 

Degrees

NOISE PERFORMANCE

 

 

 

 

 

mV p-p

Voltage Noise

en p-p

0.1 Hz to 10 Hz

 

0.8

 

Voltage Noise Density

en

f = 1 kHz

 

26

 

nV/Ö

Hz

 

Current Noise Density

in

f = 1 kHz

 

0.19

 

pA/Ö

Hz

 

NOTES

1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

–4–

REV. B

OP196/OP296/OP496

ABSOLUTE MAXIMUM RATINGS1

 

 

 

Supply Voltage . . . . . . . . . . .

. . . . . . .

. . . . . .

. . . .

. . . . .+15 V

Input Voltage2 . . . . . . . . . . .

. . . . . . .

. . . . . .

. . . .

. . . . +15 V

Differential Input Voltage2 .

. . . . . . .

. . . . . .

. . . .

. . . . .+15 V

Output Short Circuit Duration . . . . .

. . . . . .

. . . .

. . Indefinite

Storage Temperature Range

 

 

–65°C to +150°C

P, S, RU Package . . . . . . .

. . . . . . .

. . . . . .

Operating Temperature Range

–40°C to +125°C

OP196G, OP296G, OP496G, H . .

Junction Temperature Range

 

–65°C to +150°C

P, S, RU Package . . . . . . .

. . . . . . .

Lead Temperature Range (Soldering, 60 sec)

. . . .

. . . +300°C

 

 

 

 

 

 

Package Type

 

uJA3

uJC

 

Units

8-Lead Plastic DIP

 

103

43

 

°C/W

8-Lead SOIC

 

158

43

 

°C/W

8-Lead TSSOP

 

240

43

 

°C/W

14-Lead Plastic DIP

 

83

39

 

°C/W

14-Lead SOIC

 

120

36

 

°C/W

14-Lead TSSOP

 

180

35

 

°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages less than +15 V, the absolute maximum input voltage is equal to the supply voltage.

3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP package; θJA is specified for device soldered in circuit board for SOIC and TSSOP packages.

ORDERING GUIDE

 

Temperature

Package

Package

Model

Range

Description

Option

 

 

 

 

OP196GP

–40°C to +125°C

8-Lead Plastic DIP

N-8

OP196GS

–40°C to +125°C

8-Lead SOIC

SO-8

OP296GP

–40°C to +125°C

8-Lead Plastic DIP

N-8

OP296GS

–40°C to +125°C

8-Lead SOIC

SO-8

OP296HRU

–40°C to +125°C

8-Lead TSSOP

RU-8

OP496GP

–40°C to +125°C

14-Lead Plastic DIP

N-14

OP496GS

–40°C to +125°C

14-Lead SOIC

SO-14

OP496HRU

–40°C to +125°C

14-Lead TSSOP

RU-14

 

 

 

 

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. B

–5–

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