Analog Devices OP196GS, OP196HRU, OP196GP Datasheet

a		Micropower, Rail-to-Rail Input and Output
		Operational Amplifiers
		OP196/OP296/OP496

FEATURES

Rail-to-Rail Input and Output Swing Low Power: 60 A/Amplifier

Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 V max

High Open-Loop Gain: 500 V/mV Unity-Gain Stable

No Phase Reversal

		PIN CONFIGURATIONS
8-Lead Narrow-Body SO					8-Lead Narrow-Body SO
										V+
NULL	1		8	NC	OUT A		1		8
										OUT B
–IN A	2	OP196	7	V+	–IN A		2	OP296	7
				OUT A
+IN A	3		6		+IN A		3		6	–IN B
V–	4		5	NULL	V–		4		5	+IN B

NC = NO CONNECT

APPLICATIONS

Battery Monitoring

Sensor Conditioners

Portable Power Supply Control

Portable Instrumentation

GENERAL DESCRIPTION

The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges.

The extremely low power requirements and guaranteed operation from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to control battery charging. Their dynamic performance, including 26 nV/√Hz voltage noise density, recommends them for battery-powered audio applications. Capacitive loads to 200 pF are handled without oscillation.

The OP196/OP296/OP496 are specified over the HOT extended industrial (–40°C to +125°C) temperature range. 3 V operation is specified over the 0°C to 125°C temperature range.

The single OP196 and the dual OP296 are available in 8-lead SO-8 surface mount packages. The dual OP296 is available in 8-lead PDIP. The quad OP496 is available in 14-lead plastic DIP and narrow SO-14 surface-mount packages.

8-Lead TSSOP

1			8	V+
OUT A
–IN A		OP296		OUT B
+IN A				–IN B
V–				+IN B
	4		5

14-Lead Narrow-Body SO

OUT A	1		14	OUT D
–IN A
	2		13	–IN D
+IN A				+IN D
	3	OP496	12
V+				V–
	4		11
+IN B				+IN C
	5		10
–IN B				–IN C
	6		9
				OUT C
OUT B	7		8

8-Lead Plastic DIP

OUT A	1	OP296	8	V+
–IN A	2		7	OUT B
+IN A	3		6	–IN B
V–	4		5	+IN B

14-Lead Plastic DIP

OUT A	1		14	OUT D
–IN A	2		13	–IN D
+IN A	3		12	+IN D
V+	4	OP496	11	V–
+IN B	5		10	+IN C
–IN B	6		9	–IN C
OUT B	7		8	OUT C

14-Lead TSSOP

(RU Suffix)

	1		14
OUT A				OUT D
–IN A				–IN D
+IN A		OP496		+IN D
V+				V–
+IN B				+IN C
–IN B				–IN C
OUT B				OUT C
	7		8

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Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

OP196/OP296/OP496–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS (@ VS = 5.0 V, VCM = 2.5 V, TA = 25 C, unless otherwise noted.)

Parameter	Symbol	Conditions		Min	Typ	Max	Unit
INPUT CHARACTERISTICS							µV
Offset Voltage	VOS	OP196G, OP296G, OP496G			35	300
		–40°C ≤ TA ≤ +125°C				650	µV
		OP296H, OP496H				800	µV
		–40°C ≤ TA	≤ +125°C			1.2	mV
Input Bias Current	IB	–40°C ≤ TA	≤ +125°C		±10	±50	nA
Input Offset Current	IOS	–40°C ≤ TA ≤ +125°C			±1.5	± 8	nA
						±20	nA
Input Voltage Range	VCM	0 V ≤ VCM ≤ 5.0 V,		0		5.0	V
Common-Mode Rejection Ratio	CMRR
		–40°C ≤ TA ≤ +125°C		65			dB
Large Signal Voltage Gain	AVO	RL = 100 kΩ,
		0.30 V ≤ VOUT ≤ 4.7 V,
		–40°C ≤ TA	≤ +125°C	150	200		V/mV
Long-Term Offset Voltage	VOS	G Grade, Note 1				550	µV
		H Grade, Note 1				1	mV
Offset Voltage Drift	∆VOS/∆T	G Grade, Note 2			1.5		µV/°C
		H Grade, Note 2			2		µV/°C
OUTPUT CHARACTERISTICS		IL = –100 µA
Output Voltage Swing High	VOH			4.85	4.92		V
		IL = 1 mA		4.30	4.56		V
Output Voltage Swing Low	VOL	IL = 2 mA			4.1		V
		IL = –1 mA			36	70	mV
		IL = –1 mA			350	550	mV
		IL = –2 mA			750		mV
Output Current	IOUT				± 4		mA
POWER SUPPLY		±2.5 V ≤ VS	≤ ±6 V,
Power Supply Rejection Ratio	PSRR
		–40°C ≤ TA	≤ +125°C	85			dB
Supply Current per Amplifier	ISY	VOUT = 2.5 V, RL = ∞				60	µA
		–40°C ≤ TA ≤ +125°C			45	80	µA
DYNAMIC PERFORMANCE		RL = 100 kΩ					V/µs
Slew Rate	SR				0.3
Gain Bandwidth Product	GBP				350		kHz
Phase Margin	øm				47		Degrees
NOISE PERFORMANCE							µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz			0.8
Voltage Noise Density	en	f = 1 kHz			26		nV/√Hz
Current Noise Density	in	f = 1 kHz			0.19		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

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OP196/OP296/OP496

ELECTRICAL SPECIFICATIONS (@ VS = 3.0 V, VCM = 1.5 V, TA = 25 C, unless otherwise noted.)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
INPUT CHARACTERISTICS						µV
Offset Voltage	VOS	OP196G, OP296G, OP496G		35	300
		0°C ≤ TA ≤ 125°C			650	µV
		OP296H, OP496H			800	µV
		0°C ≤ TA ≤ 125°C			1.2	mV
Input Bias Current	IB			± 10	± 50	nA
Input Offset Current	IOS			± 1	± 8	nA
Input Voltage Range	VCM	0 V ≤ VCM ≤ 3.0 V,	0		3.0	V
Common-Mode Rejection Ratio	CMRR
		0°C ≤ TA ≤ 125°C	60			dB
Large Signal Voltage Gain	AVO	RL = 100 kΩ	80	200		V/mV
Long-Term Offset Voltage	VOS	G Grade, Note 1			550	µV
		H Grade, Note 1			1	mV
Offset Voltage Drift	∆VOS/∆T	G Grade, Note 2		1.5		µV/°C
		H Grade, Note 2		2		µV/°C
OUTPUT CHARACTERISTICS		IL = 100 µA
Output Voltage Swing High	VOH		2.85			V
Output Voltage Swing Low	VOL	IL = –100 µA			70	mV
POWER SUPPLY		VOUT = 1.5 V, RL = ∞				µA
Supply Current per Amplifier	ISY			40	60
		0°C ≤ TA ≤ 125°C			80	µA
DYNAMIC PERFORMANCE		RL = 100 kΩ				V/µs
Slew Rate	SR			0.25
Gain Bandwidth Product	GBP			350		kHz
Phase Margin	øm			45		Degrees
NOISE PERFORMANCE						µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		0.8
Voltage Noise Density	en	f = 1 kHz		26		nV/√Hz
Current Noise Density	in	f = 1 kHz		0.19		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3. 2Offset voltage drift is the average of the 0°C to 25°C delta and the 25°C to 125°C delta.

Specifications subject to change without notice.

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OP196/OP296/OP496 ELECTRICAL SPECIFICATIONS

(@ VS = 12.0 V, VCM = 6 V, TA = 25 C, unless otherwise noted.)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
INPUT CHARACTERISTICS						µV
Offset Voltage	VOS	OP196G, OP296G, OP496G		35	300
		0°C ≤ TA ≤ 125°C			650	µV
		OP296H, OP496H			800	µV
		0°C ≤ TA ≤ 125°C			1.2	mV
Input Bias Current	IB	–40°C ≤ TA ≤ +125°C		± 10	± 50	nA
Input Offset Current	IOS	–40°C ≤ TA ≤ +125°C		± 1	± 8	nA
					± 15	nA
Input Voltage Range	VCM	0 V ≤ VCM ≤ 12 V,	0		12	V
Common-Mode Rejection Ratio	CMRR
		–40°C ≤ TA ≤ +125°C	65			dB
Large Signal Voltage Gain	AVO	RL = 100 kΩ	300	1000		V/mV
Long-Term Offset Voltage	VOS	G Grade, Note 1			550	µV
		H Grade, Note 1			1	mV
Offset Voltage Drift	∆VOS/∆T	G Grade, Note 2		1.5		µV/°C
		H Grade, Note 2		2		µV/°C
OUTPUT CHARACTERISTICS		IL = 100 µA
Output Voltage Swing High	VOH		11.85			V
Output Voltage Swing Low	VOL	IL = 1 mA	11.30			V
		IL = –1 mA			70	mV
		IL = –1 mA		± 4	550	mV
Output Current	IOUT					mA
POWER SUPPLY		VOUT = 6 V, RL = ∞				µA
Supply Current per Amplifier	ISY				60
		–40°C ≤ TA ≤ +125°C			80	µA
Supply Voltage Range	VS		3		12	V
DYNAMIC PERFORMANCE		RL = 100 kΩ				V/µs
Slew Rate	SR			0.3
Gain Bandwidth Product	GBP			450		kHz
Phase Margin	øm			50		Degrees
NOISE PERFORMANCE						µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		0.8
Voltage Noise Density	en	f = 1 kHz		26		nV/√Hz
Current Noise Density	in	f = 1 kHz		0.19		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

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OP196/OP296/OP496

ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . .		. . . . . . .	. . . . . .	. . . .	. . . . . . 15 V
Input Voltage2 . . . . . . . . . . .		. . . . . . .	. . . . . .	. . . .	. . . . . . 15 V
Differential Input Voltage2 .		. . . . . . .	. . . . . .	. . . .	. . . . . . 15 V
Output Short Circuit Duration . . . . .			. . . . . .	. . . .	. . Indefinite
Storage Temperature Range				–65°C to +150°C
P, S, RU Package . . . . . . .		. . . . . . .	. . . . . .
Operating Temperature Range				–40°C to +125°C
OP196G, OP296G, OP496G, H . .			. . . . .
Junction Temperature Range				–65°C to +150°C
P, S, RU Package . . . . . . .		. . . . . . .	. . . . .
Lead Temperature Range (Soldering, 60 sec)				. . . .	. . . . 300°C
Package Type		JA3	JC		Unit
8-Lead Plastic DIP		103	43		°C/W
8-Lead SOIC		158	43		°C/W
8-Lead TSSOP		240	43		°C/W
14-Lead Plastic DIP		83	39		°C/W
14-Lead SOIC		120	36		°C/W
14-Lead TSSOP		180	35		°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages less than 15 V, the absolute maximum input voltage is equal to the supply voltage.

3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP package; θJA is specified for device soldered in circuit board for SOIC and TSSOP packages.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
OP196GS	–40°C to +125°C	8-Lead SOIC	SO-8
OP296GP*	–40°C to +125°C	8-Lead Plastic DIP	N-8
OP296GS	–40°C to +125°C	8-Lead SOIC	SO-8
OP296HRU	–40°C to +125°C	8-Lead TSSOP	RU-8
OP496GP*	–40°C to +125°C	14-Lead Plastic DIP	N-14
OP496GS	–40°C to +125°C	14-Lead SOIC	SO-14
OP496HRU	–40°C to +125°C	14-Lead TSSOP	RU-14

*Not for new design, obsolete April 2002.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

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