Analog Devices OP37EP, OP37EZ, OP37FP, OP37GP, OP37GZ Datasheet

a		Low Noise, Precision, High Speed
		Operational Amplifier (A VCL > 5)
		OP37

FEATURES

Low Noise, 80 nV p-p (0.1 Hz to 10 Hz) 3 nV/√Hz @ 1 kHz

Low Drift, 0.2 V/ C

High Speed, 17 V/ s Slew Rate

63 MHz Gain Bandwidth

Low Input Offset Voltage, 10 V

Excellent CMRR, 126 dB (Common-Voltage @ 11 V) High Open-Loop Gain, 1.8 Million

Replaces 725, OP-07, SE5534 In Gains > 5 Available in Die Form

The output stage has good load driving capability. A guaranteed swing of 10 V into 600 Ω and low output distortion make the OP37 an excellent choice for professional audio applications.

PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 µV/month, allow the circuit designer to achieve performance levels previously attained only by discrete designs.

Low-cost, high-volume production of the OP37 is achieved by using on-chip zener-zap trimming. This reliable and stable offset trimming scheme has proved its effectiveness over many years of production history.

GENERAL DESCRIPTION

The OP37 provides the same high performance as the OP27, but the design is optimized for circuits with gains greater than five. This design change increases slew rate to 17 V/µs and gain-bandwidth product to 63 MHz.

The OP37 provides the low offset and drift of the OP07 plus higher speed and lower noise. Offsets down to 25 µV and drift of 0.6 µV/°C maximum make the OP37 ideal for precision instrumentation applications. Exceptionally low noise (en= 3.5 nV/ @ 10 Hz), a low 1/f noise corner frequency of 2.7 Hz, and the high gain of 1.8 million, allow accurate high-gain amplification of low-level signals.

The low input bias current of 10 nA and offset current of 7 nA are achieved by using a bias-current cancellation circuit. Over the military temperature range this typically holds IB and IOS to 20 nA and 15 nA respectively.

The OP37 brings low-noise instrumentation-type performance to such diverse applications as microphone, tapehead, and RIAA phono preamplifiers, high-speed signal conditioning for data acquisition systems, and wide-bandwidth instrumentation.

PIN CONNECTIONS

8-Lead Hermetic DIP

(Z Suffix)

Epoxy Mini-DIP

(P Suffix)

8-Lead SO

(S Suffix)

V	TRIM	1	8	V	TRIM
OS			OP37	OS
				V+
	–IN	2	7
	+IN	3	6	OUT
	V–	4	5	NC

NC = NO CONNECT

		SIMPLIFIED SCHEMATIC
								V+
R3	1	8	R4	C2
Q6
						Q22		Q46
	VOS ADJ.						C1
R1*			R2*	R23	R24
				Q21
				Q23	Q24		R9
							Q20	Q19
Q1A	Q1B	Q2B	Q2A				R12	OUTPUT
NON-INVERTING					R5	C3	C4
INPUT (+)
Q3
INVERTING			Q11	Q12			Q26	Q45
INPUT (–)
				Q27	Q28
*R1 AND R2 ARE PERMANENTLY
ADJUSTED AT WAFER TEST FOR
MINIMUM OFFSET VOLTAGE.
								V–

REV. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

OP37

ABSOLUTE MAXIMUM RATINGS4

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Internal Voltage (Note 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite Differential Input Voltage (Note2) . . . . . . . . . . . . . . . . . 0.7 V Differential Input Current (Note 2) . . . . . . . . . . . . . . . . 25 mA Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range

OP37A . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +1 25°C OP37E (Z) . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to +85°C OP37E, OP-37F (P) . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C OP37G (P, S, Z) . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C Junction Temperature . . . . . . . . . . . . . . . . . . –45°C to +150°C

Package Type	JA3	JC	Unit
8-Lead Hermetic DIP (Z)	148	16	°C/W
8-Lead Plastic DIP (P)	103	43	°C/W
8-Lead SO (S)	158	43	°C/W

NOTES

1For supply voltages less than 22 V, the absolute maximum input voltage is equal to the supply voltage.

2The OP37’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds 0.7 V, the input Current should be limited to 25 mA.

3 JA is specified for worst case mounting conditions, i.e., JA is specified for device in socket for TO, CerDIP, P-DIP, and LCC packages; JA is specified for device soldered to printed circuit board for SO package.

4Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

ORDERING GUIDE

TA = 25°C			Operating
VOS MAX	CerDIP	Plastic	Temperature
( V)	8-Lead	8-Lead	Range
25	OP37AZ*		MIL
25	OP37EZ	OP37EP	IND/COM
60		OP37FP*	IND/COM
100		OP37GP	XIND
100	OP37GZ	OP37GS	XIND

*Not for new design, obsolete, April 2002.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP37 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–2–

REV. A

												OP37
SPECIFICATIONS ( VS = 15 V, TA = 25 C, unless otherwise noted.)
			OP37A/E			OP37F				OP37G
Parameter	Symbol	Conditions	Min	Typ	Max	Min	Typ	Max	Min	Typ	Max	Unit
Input Offset		Note 1		10	25		20	60		30	100	µV
Voltage	VOS
Long-Term	VOS/Time	Notes 2, 3		0.2	1.0		0.3	1.5		0.4	2.0	µV/Mo
Stability
Input Offset				7	35		9	50		12	75	nA
Current	IOS
Input Bias				± 10	± 40		± 12	± 55		± 15	± 80	nA
Current	IB
Input Noise		1 Hz to 10 Hz3, 5		0.08	0.18		0.08	0.18		0.09	0.25	µV p-p
Voltage	enp-p
Input Noise		fO = 10 Hz3		3.5	5.5		3.5	5.5		3.8	8.0
Voltage Density	en											nV/√ Hz
		fO = 30 Hz3		3.1	4.5		3.1	4.5		3.3	5.6
Input Noise		fO = 1000 Hz3		3.0	3.8		3.0	3.8		3.2	4.5
		fO = 10 Hz3, 6		1.7	4.0		1.7	4.0		1.7
CurrentDensity	iN											pA/√ Hz
		fO = 30 Hz3, 6		1.0	2.3		1.0	2.3		1.0
Input Resistance		fO = 1000 Hz3, 6		0.4	0.6		0.4	0.6		0.4	0.6
Differential												MΩ
Mode	RIN	Note 7	1.3	6		0.9	4 5		0.7	4
Input Resistance												GΩ
Common Mode	RINCM			3			2.5			2
Input Voltage			± 11	± 12.3		± 11	± 12.3		± 11	± 12.3
Range	IVR											V
Common Mode		VCM = ± 11 V
Rejection Ratio	CMRR		114	126		106	123		100	120		dB
Power Supply		VS = ± 4 V										µV/ V
Rejection Ratio	PSSR			1	10		1	10		2	20
Large Signal		to ±18 V
		RL ≥ 2 kΩ,
Voltage Gain	AVO
		VO = ± 10 V	1000	1800		1000	1800		700	1500		V/m V
		RL ≥ 1 kΩ,
		Vo = ± 10 V	800	1500		800	1500		400	1500		V/m V
		RL ≥ 600 Ω,
		VO = ± 1 V,
Output Voltage		VS ±44	250	700		250	700		200	500		V/m V
		RL ≥ 2 kΩ	± 12.0	± 13.8		± 12.0	± 13.8		± 11.5	± 13.5
Swing	VO											V
		RL ≥ 600 Ω	± 10	± 11.5		± 10	± 11.5		± 10	± 11.5		V
Slew Rate	SR	RL ≥ 2k Ω4	11	17		11	17		11	17		V/µs
Gain Bandwidth		fO = 10 kHz4
Product	GBW		45	63		45	63		45	63		MHz
Open-Loop		fO = 1 MHz		40			40			40		MHz
												Ω
Output Resistance	RO	VO = 0, IO = 0		70			70			70
Power
Consumption	Pd	VO = 0		90	140		90	140		100	170	mW
Offset Adjustment		RP = 10 kΩ		± 4			± 4			± 4
Range												mV

NOTES

1Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up.

2Long term input offset voltage stability refers to the average trend line of VOS vs. Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5 V—refer to typical performance curve.

3Sample tested.

4Guaranteed by design.

5See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester. 6See test circuit for current noise measurement.

7Guaranteed by input bias current.

REV. A

–3–

OP37–SPECIFICATIONS

Electrical Characteristics ( VS = 15 V, –55 C < TA < +125 C, unless otherwise noted.)

OP37A

OP37C

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Unit

Input Offset

Note 1

1025

30

100

µV

Voltage

VOS

Average Input

Offset Drift

TCVOS

Note 2

µV/°C

Input Offset

TCVOSN

Note 3

0.2

0.6

0.4

1.8

Current

IOS

1550

30

135

nA

Input Bias

±20

± 60

±35

±150

Current

IB

nA

Input Voltage

±10.3

±11.5

±± 10.2

±11.5

Range

IVR

V

Common Mode

VCM = ± 10 V

Rejection Ratio

CMRR

108

122

94

116

dB

Power Supply

VS = ±4.5 V to

Rejection Ratio

PSRR

µV/ V

Large-Signal

± 18 V

2 16

4

51

RL ≥ 2 kΩ,

Voltage Gain

AVO

Output Voltage

VO = ± 10 V

600

1200

300

800

V/m V

RL ≥ 2 kΩ

±11.5

±13.5

±10.5

±13.0

Swing

VO

V

(VS = 15 V, –25 C < TA < +85 C for OP37EZ/FZ, 0 C < TA < 70 C for OP37EP/FP, and –40 C < TA

Electrical Characteristics < +85 C for OP37GP/GS/GZ, unless otherwise noted.)

OP37E

OP37F

OP37C

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

Input Offset

20

50

40

140

55

220

µV

Voltage

VOS

Average Input

Offset Drift

TCVOS

Note 2

µV/°C

Input Offset

TCVOSN

Note 3

0.2

0.6

0.3

1.3

0.4

1.8

Current

IOS

10

50

14

85

20

135

nA

Input Bias

±14

±60

±18

±95

±25

±150

Current

IB

nA

Input Voltage

±10.5

±11.8

±10.5

±11.8

±10.5 ±11.8

Range

IVR

V

Common Mode

VCM = ±10 V

Rejection Ratio

CMRR

108

122

100

119

94

116

dB

Power Supply

VS = ± 4.5 V to

Rejection Ratio

PSRR

µV/ V

Large-Signal

±18 V

2

15

2

16

4

32

RL ≥ 2 kΩ,

Voltage Gain

AVO

Output Voltage

VO = ±10 V

750

1500

700

1300

450

1000

V/mV

RL ≥ 2 kΩ

±11.7

±13.6

±11.4

±13.5

±11

±13.3

Swing

VO

V

NOTES

1Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up.

2The TC VOS performance is within the specifications unnulled or when nulled withRP = 8 kΩ to 20 kΩ. TC VOS is 100% tested for A/E grades, sample tested for F/G grades. 3Guaranteed by design.

–4–

REV. A

OP37

1. NULL

2. (–) INPUT

3. (+) INPUT

4. V–

6. OUTPUT

7. V+

8. NULL

(VS = 15 V, TA = 25 C for OP37N, OP37G, and OP37GR devices; TA = 125 C for OP37NT and OP37GT devices,

Wafer Test Limits unless otherwise noted.)

			OP37NT	OP37N	OP37GT	OP37G	OP37GR
Parameter	Symbol	Conditions	Limit	Limit	Limit	Limit	Limit	Unit
Input Offset		Note 1	60	35	200	60	100	µV MAX
Voltage	VOS
Input Offset
Current	IOS		50	35	85	50	75	nA MAX
Input Bias			± 60	± 40	± 95	± 55	± 80
Current	IB							nA MAX
Input Voltage			± 10.3	± 11	± 10.3	± 11	± 11
Range	IVR							V MIN
Common Mode		VCM = ± 11 V
Rejection Ratio	CMRR		108	114	100	106	100	dB MIN
Power Supply		TA = 25°C,
Rejection Ratio	PSRR
		VS = ±4 V to						µV/V MAX
		± 18 V	10	10	10	10	20
		TA = 125°C,
		VS = ±4.5 V to						µV/V MAX
Large-Signal		± 18 V	16		20
		RL ≥ 2 kΩ,
Voltage Gain	AVO
		VO = ± 10 V	600	1000	500	1000	700	V/mV MIN
		RL ≥ 1 kΩ,
Output Voltage		VO = ± 10 V		800		800		V/mV MIN
		RL ≥ 2 kΩ	± 11.5	± 12	± 11	± 12	± 11.5
Swing	VO							V MIN
Power		RL ≥ 600 kΩ		± 10		± 10	± 10	V MIN
Consumption	Pd	VO = 0		140		140	170	mW MAX

NOTES

For 25°C characterlstics of OP37NT and OP37GT devices, see OP37N and OP37G characteristics, respectively.

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

REV. A

–5–