a |
Precision Micropower, Low Dropout, |
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Voltage References |
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REF19x Series |
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FEATURES
Initial Accuracy: 62 mV max
Temperature Coefficient: 5 ppm/°C max
Low Supply Current: 45 mA max
Sleep Mode: 15 mA max
Low Dropout Voltage
Load Regulation: 4 ppm/mA
Line Regulation: 4 ppm/V
High Output Current: 30 mA
Short Circuit Protection
APPLICATIONS
Portable Instrumentation
A-to-D and D-to-A Converters
Smart Sensors
Solar Powered Applications
Loop Current Powered Instrumentations
GENERAL DESCRIPTION
REF19x series precision bandgap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable thin film resistors to achieve a very low temperature coefficient and a high initial accuracy.
PIN CONFIGURATIONS
8-Lead Narrow-Body SO and TSSOP
(S Suffix and RU Suffix)
TP 1 |
8 NC |
VS |
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REF19x |
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NC |
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2 |
7 |
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SERIES |
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OUTPUT |
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SLEEP |
3 |
TOP VIEW 6 |
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GND |
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(Not to Scale) |
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TP |
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4 |
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5 |
8-Lead Epoxy DIP (P Suffix)
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NC |
TP |
1 |
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8 |
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REF19x |
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VS |
2 |
SERIES |
7 |
NC |
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TOP VIEW |
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OUTPUT |
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SLEEP |
3 |
6 |
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(Not to Scale) |
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GND |
4 |
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5 |
TP |
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NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS
NO USER CONNECTION
The REF19x series are micropower, Low Dropout Voltage (LDV) devices providing a stable output voltage from supplies as low as 100 mV above the output voltage and consuming less than 45 A of supply current. In sleep mode, which is enabled by applying a low TTL or CMOS level to the sleep pin, the output is turned off and supply current is further reduced to less than 15 A.
The REF19x series references are specified over the extended industrial temperature range (–40°C to +85°C) with typical performance specifications over –40°C to +125°C for applications such as automotive.
All electrical grades are available in 8-Lead SOIC; the PDIP and TSSOP are only available in the lowest electrical grade. Products are also available in die form.
Test Pins (TP)
The test pins, Pin 1 and Pin 5, are reserved for in-package zener-zap. To achieve the highest level of accuracy at the output, the zener-zapping technique is used to trim the output voltage. Since each unit may require a different amount of adjustment, the resistance value at the test pins will vary widely from pin-to-pin as well as from part-to-part. The user should not make any physical nor electrical connections to Pin 1 and Pin 5.
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Table I |
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Part Number |
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Nominal Output Voltage (V) |
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REF191 |
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2.048 |
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REF192 |
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2.50 |
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REF193 |
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3.00 |
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REF194 |
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4.50 |
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REF195 |
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5.00 |
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REF196 |
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3.30 |
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REF198 |
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4.096 |
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ORDERING GUIDE |
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Temperature |
Package |
Package |
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Model |
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Range |
Description |
Option1 |
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REF19xGP |
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–40°C to +85°C |
8-Lead Plastic DIP2 |
N-8 |
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REF19xES3 |
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–40°C to +85°C |
8-Lead SOIC |
SO-8 |
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REF19xFS3 |
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–40°C to +85°C |
8-Lead SOIC |
SO-8 |
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REF19xGS |
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–40°C to +85°C |
8-Lead SOIC |
SO-8 |
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REF19xGRU |
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–40°C to +85°C |
8-Lead TSSOP |
RU-8 |
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REF19xGBC |
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+25°C |
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DICE |
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NOTES
1N = Plastic DIP, SO = Small Outline, RU = Thin Shrink Small Outline. 28-Lead plastic DIP only available in “G” grade.
3REF193 and REF196 are available in “G” grade only.
REV. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 |
World Wide Web Site: http://www.analog.com |
Fax: 781/326-8703 |
© Analog Devices, Inc., 1999 |
REF19x Series
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = +258C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Units |
INITIAL ACCURACY1 |
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“E” Grade |
VO |
IOUT = 0 mA |
2.046 |
2.048 |
2.050 |
V |
“F” Grade |
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2.043 |
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2.053 |
V |
“G” Grade |
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2.038 |
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2.058 |
V |
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LINE REGULATION2 |
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3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA |
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“E” Grade |
VO/ VIN |
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2 |
4 |
ppm/V |
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“F & G” Grades |
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4 |
8 |
ppm/V |
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LOAD REGULATION2 |
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VS = 5.0 V, 0 ≤ IOUT ≤ 30 mA |
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“E” Grade |
VO/ VLOAD |
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4 |
10 |
ppm/mA |
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“F & G” Grades |
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6 |
15 |
ppm/mA |
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DROPOUT VOLTAGE |
VS – VO |
VS = 3.15 V, ILOAD = 2 mA |
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0.95 |
V |
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VS = 3.3 V, ILOAD = 10 mA |
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1.25 |
V |
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VS = 3.6 V, ILOAD = 30 mA |
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1.55 |
V |
LONG-TERM STABILITY3 |
VO |
1000 Hours @ +125°C |
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1.2 |
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mV |
NOISE VOLTAGE |
eN |
0.1 Hz to 10 Hz |
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20 |
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µV p-p |
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NOTES
1Initial accuracy includes temperature hysteresis effect.
2Line and load regulation specifications include the effect of self-heating.
3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +858C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min Typ |
Max |
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Units |
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TEMPERATURE COEFFICIENT1, 2 |
TCVO/°C |
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ppm/°C |
“E” Grade |
IOUT = 0 mA |
2 |
5 |
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“F” Grade |
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5 |
10 |
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ppm/°C |
“G” Grade3 |
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10 |
25 |
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ppm/°C |
LINE REGULATION4 |
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3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA |
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“E” Grade |
VO/ VIN |
5 |
10 |
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ppm/V |
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“F & G” Grades |
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10 |
20 |
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ppm/V |
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LOAD REGULATION4 |
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VS = 5.0 V, 0 ≤ IOUT ≤ 25 mA |
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“E” Grade |
VO/ VLOAD |
5 |
15 |
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ppm/mA |
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“F & G” Grades |
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10 |
20 |
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ppm/mA |
DROPOUT VOLTAGE |
VS – VO |
VS = 3.15 V, ILOAD = 2 mA |
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0.95 |
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V |
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VS = 3.3 V, ILOAD = 10 mA |
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1.25 |
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V |
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VS = 3.6 V, ILOAD = 25 mA |
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1.55 |
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V |
SLEEP PIN |
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Logic High Input Voltage |
VH |
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2.4 |
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V |
Logic High Input Current |
IH |
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–8 |
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µA |
Logic Low Input Voltage |
VL |
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0.8 |
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V |
Logic Low Input Current |
IL |
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–8 |
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µA |
SUPPLY CURRENT |
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No Load |
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45 |
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µA |
Sleep Mode |
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No Load |
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15 |
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µA |
NOTES
1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
–2– |
REV. D |
REF19x Series
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +1258C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min Typ Max |
Units |
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TEMPERATURE COEFFICIENT1, 2 |
TCVO/°C |
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ppm/°C |
“E” Grade |
IOUT = 0 mA |
2 |
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“F” Grade |
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5 |
ppm/°C |
“G” Grade3 |
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10 |
ppm/°C |
LINE REGULATION4 |
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3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA |
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“E” Grade |
VO/ VIN |
10 |
ppm/V |
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“F & G” Grades |
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20 |
ppm/V |
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LOAD REGULATION4 |
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VS = 5.0 V, 0 ≤ IOUT ≤ 20 mA |
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“E” Grade |
VO/ VLOAD |
10 |
ppm/mA |
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“F & G” Grades |
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20 |
ppm/mA |
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DROPOUT VOLTAGE |
VS – VO |
VS = 3.3 V, ILOAD = 10 mA |
1.25 |
V |
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VS = 3.6 V, ILOAD = 20 mA |
1.55 |
V |
NOTES
1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REV. D |
–3– |
REF19x Series
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = +258C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Units |
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INITIAL ACCURACY1 |
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“E” Grade |
VO |
IOUT = 0 mA |
2.498 |
2.500 |
2.502 |
V |
“F” Grade |
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2.495 |
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2.505 |
V |
“G” Grade |
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2.490 |
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2.510 |
V |
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LINE REGULATION2 |
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3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA |
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“E” Grade |
VO/ VIN |
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2 |
4 |
ppm/V |
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“F & G” Grades |
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4 |
8 |
ppm/V |
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LOAD REGULATION2 |
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VS = 5.0 V, 0 ≤ IOUT ≤ 30 mA |
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“E” Grade |
VO/ VLOAD |
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4 |
10 |
ppm/mA |
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“F & G” Grades |
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6 |
15 |
ppm/mA |
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DROPOUT VOLTAGE |
VS – VO |
VS = 3.5 V, ILOAD = 10 mA |
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1.00 |
V |
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VS = 3.9 V, ILOAD = 30 mA |
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1.40 |
V |
LONG-TERM STABILITY3 |
VO |
1000 Hours @ +125°C |
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1.2 |
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mV |
NOISE VOLTAGE |
eN |
0.1 Hz to 10 Hz |
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25 |
|
µV p-p |
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NOTES
1Initial accuracy includes temperature hysteresis effect.
2Line and load regulation specifications include the effect of self-heating.
3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = –408C ≤ TA ≤ +858C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min Typ |
Max |
Units |
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TEMPERATURE COEFFICIENT1, 2 |
TCVO/°C |
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ppm/°C |
“E” Grade |
IOUT = 0 mA |
2 |
5 |
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“F” Grade |
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5 |
10 |
ppm/°C |
“G” Grade3 |
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10 |
25 |
ppm/°C |
LINE REGULATION4 |
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3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA |
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“E” Grade |
VO / VIN |
5 |
10 |
ppm/V |
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“F & G” Grades |
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10 |
20 |
ppm/V |
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LOAD REGULATION4 |
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VS = 5.0 V, 0 ≤ IOUT ≤ 25 mA |
|
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“E” Grade |
VO / VLOAD |
5 |
15 |
ppm/mA |
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“F & G” Grades |
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10 |
20 |
ppm/mA |
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DROPOUT VOLTAGE |
VS – VO |
VS = 3.5 V, ILOAD = 10 mA |
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1.00 |
V |
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VS = 4.0 V, ILOAD = 25 mA |
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1.50 |
V |
SLEEP PIN |
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Logic High Input Voltage |
VH |
|
2.4 |
|
V |
Logic High Input Current |
IH |
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–8 |
µA |
Logic Low Input Voltage |
VL |
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0.8 |
V |
Logic Low Input Current |
IL |
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–8 |
µA |
SUPPLY CURRENT |
|
No Load |
|
45 |
µA |
Sleep Mode |
|
No Load |
|
15 |
µA |
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|
NOTES
1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
–4– |
REV. D |
REF19x Series
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +1258C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min Typ Max |
Units |
|
|
|
|
|
TEMPERATURE COEFFICIENT1, 2 |
TCVO/°C |
|
|
ppm/°C |
“E” Grade |
IOUT = 0 mA |
2 |
||
“F” Grade |
|
|
5 |
ppm/°C |
“G” Grade3 |
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|
10 |
ppm/°C |
LINE REGULATION4 |
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3.0 V ≤ VS ≤ 15 V, IOUT = 0 mA |
|
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“E” Grade |
VO / VIN |
10 |
ppm/V |
|
“F & G” Grades |
|
|
20 |
ppm/V |
|
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|
LOAD REGULATION4 |
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VS = 5.0 V, 0 ≤ IOUT ≤ 20 mA |
|
|
“E” Grade |
VO / VLOAD |
10 |
ppm/mA |
|
“F & G” Grades |
|
|
20 |
ppm/mA |
|
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|
|
DROPOUT VOLTAGE |
VS – VO |
VS = 3.5 V, ILOAD = 10 mA |
1.00 |
V |
|
|
VS = 4.0 V, ILOAD = 20 mA |
1.50 |
V |
NOTES
1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating. Specifications subject to change without notice.
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = +258C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Units |
|
|
|
|
|
|
|
INITIAL ACCURACY1 |
|
|
|
|
|
|
“G” Grade |
VO |
IOUT = 0 mA |
2.990 |
3.0 |
3.010 |
V |
LINE REGULATION2 |
|
3.3 V, ≤ VS ≤ 15 V, IOUT = 0 mA |
|
|
|
|
“G” Grades |
VO/ VIN |
|
4 |
8 |
ppm/V |
|
LOAD REGULATION2 |
|
VS = 5.0 V, 0 ≤ IOUT ≤ 30 mA |
|
|
|
|
“G” Grade |
VO/ VLOAD |
|
6 |
15 |
ppm/mA |
|
DROPOUT VOLTAGE |
VS – VO |
VS = 3.8 V, ILOAD = 10 mA |
|
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0.80 |
V |
|
|
VS = 4.0 V, ILOAD = 30 mA |
|
|
1.00 |
V |
LONG-TERM STABILITY 3 |
VO |
1000 Hours @ +125°C |
|
1.2 |
|
mV |
NOISE VOLTAGE |
eN |
0.1 Hz to 10 Hz |
|
30 |
|
V p-p |
|
|
|
|
|
|
|
NOTES
1Initial accuracy includes temperature hysteresis effect.
2Line and load regulation specifications include the effect of self-heating.
3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
REV. D |
–5– |
REF19x Series
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = –408C ≤ TA ≤ +858C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min Typ |
Max |
Units |
|
|
|
|
|
|
TEMPERATURE COEFFICIENT1, 2 |
TCVO/°C |
|
|
|
ppm/°C |
“G” Grade3 |
IOUT = 0 mA |
10 |
25 |
||
LINE REGULATION4 |
|
3.3 V ≤ VS ≤ 15 V, IOUT = 0 mA |
|
|
|
“G” Grade |
VO/ VIN |
10 |
20 |
ppm/V |
|
LOAD REGULATION4 |
|
VS = 5.0 V, 0 ≤ IOUT ≤ 25 mA |
|
|
|
“G” Grade |
VO/ VLOAD |
10 |
20 |
ppm/mA |
|
DROPOUT VOLTAGE |
VS – VO |
VS = 3.8 V, ILOAD = 10 mA |
|
0.80 |
V |
|
|
VS = 4.1 V, ILOAD = 30 mA |
|
1.10 |
V |
SLEEP PIN |
|
|
|
|
|
Logic High Input Voltage |
VH |
|
2.4 |
|
V |
Logic High Input Current |
IH |
|
|
–8 |
µA |
Logic Low Input Voltage |
VL |
|
|
0.8 |
V |
Logic Low Input Current |
IL |
|
|
–8 |
µA |
SUPPLY CURRENT |
|
No Load |
|
45 |
µA |
Sleep Mode |
|
No Load |
|
15 |
µA |
|
|
|
|
|
|
NOTES |
|
|
|
|
|
1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating. Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –408C ≤ TA ≤ +1258C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min Typ Max |
Units |
|
|
|
|
|
TEMPERATURE COEFFICIENT1, 2 |
TCVO/°C |
|
|
ppm/°C |
“G” Grade3 |
IOUT = 0 mA |
10 |
||
LINE REGULATION4 |
|
3.3 V ≤ VS ≤ 15 V, IOUT = 0 mA |
|
|
“G” Grade |
VO / VIN |
20 |
ppm/V |
|
LOAD REGULATION4 |
|
VS = 5.0 V, 0 ≤ IOUT ≤ 20 mA |
|
|
“G” Grade |
VO / VLOAD |
10 |
ppm/mA |
|
DROPOUT VOLTAGE |
VS – VO |
VS = 3.8 V, ILOAD = 10 mA |
0.80 |
V |
|
|
VS = 4.1 V, ILOAD = 20 mA |
1.10 |
V |
NOTES
1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
–6– |
REV. D |
REF19x Series
REF194–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 5.0 V, TA = +258C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Units |
|
|
|
|
|
|
|
INITIAL ACCURACY1 |
|
|
|
|
|
|
“E” Grade |
VO |
IOUT = 0 mA |
4.498 |
4.5 |
4.502 |
V |
“F” Grade |
|
|
4.495 |
|
4.505 |
V |
“G” Grade |
|
|
4.490 |
|
4.510 |
V |
|
|
|
|
|
|
|
LINE REGULATION2 |
|
4.75 V ≤ VS ≤ 15 V, IOUT = 0 mA |
|
|
|
|
“E” Grade |
VO / VIN |
|
2 |
4 |
ppm/V |
|
“F & G” Grades |
|
|
|
4 |
8 |
ppm/V |
|
|
|
|
|
|
|
LOAD REGULATION2 |
|
VS = 5.8 V, 0 ≤ IOUT ≤ 30 mA |
|
|
|
|
“E” Grade |
VO / VLOAD |
|
2 |
4 |
ppm/mA |
|
“F & G” Grades |
|
|
|
4 |
8 |
ppm/mA |
|
|
|
|
|
|
|
DROPOUT VOLTAGE |
VS – VO |
VS = 5.00 V, ILOAD = 10 mA |
|
|
0.50 |
V |
|
|
VS = 5.8 V, ILOAD = 30 mA |
|
|
1.30 |
V |
LONG-TERM STABILITY3 |
VO |
1000 Hours @ +125°C |
|
2 |
|
mV |
NOISE VOLTAGE |
eN |
0.1 Hz to 10 Hz |
|
45 |
|
µV p-p |
|
|
|
|
|
|
|
NOTES
1Initial accuracy includes temperature hysteresis effect.
2Line and load regulation specifications include the effect of self-heating.
3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS (@ VS = 5.0 V, TA = –408C ≤ TA ≤ +858C unless otherwise noted)
Parameter |
Symbol |
Condition |
Min Typ |
Max |
Units |
|
|
|
|
|
|
TEMPERATURE COEFFICIENT1, 2 |
TCVO/°C |
|
|
|
ppm/°C |
“E” Grade |
IOUT = 0 mA |
2 |
5 |
||
“F” Grade |
|
|
5 |
10 |
ppm/°C |
“G” Grade3 |
|
|
10 |
25 |
ppm/°C |
LINE REGULATION4 |
|
4.75 V ≤ VS ≤ 15 V, IOUT = 0 mA |
|
|
|
“E” Grade |
VO / VIN |
5 |
10 |
ppm/V |
|
“F & G” Grades |
|
|
10 |
20 |
ppm/V |
|
|
|
|
|
|
LOAD REGULATION4 |
|
VS = 5.80 V, 0 ≤ IOUT ≤ 25 mA |
|
|
|
“E” Grade |
VO / VLOAD |
5 |
15 |
ppm/mA |
|
“F & G” Grades |
|
|
10 |
20 |
ppm/mA |
|
|
|
|
|
|
DROPOUT VOLTAGE |
VS – VO |
VS = 5.00 V, ILOAD = 10 mA |
|
0.5 |
V |
|
|
VS = 5.80 V, ILOAD = 25 mA |
|
1.30 |
V |
SLEEP PIN |
|
|
|
|
|
Logic High Input Voltage |
VH |
|
2.4 |
|
V |
Logic High Input Current |
IH |
|
|
–8 |
µA |
Logic Low Input Voltage |
VL |
|
|
0.8 |
V |
Logic Low Input Current |
IL |
|
|
–8 |
µA |
SUPPLY CURRENT |
|
No Load |
|
45 |
µA |
Sleep Mode |
|
No Load |
|
15 |
µA |
|
|
|
|
|
|
NOTES
1For proper operation, a 1 F capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REV. D |
–7– |