Analog Devices OP193FS-REEL, OP193ES, OP293ES, OP493FS, OP493ES-REEL Datasheet

...

0 (0)

Precision, Micropower

NC = NO CONNECT

OUT A

V+

NULL

–IN A

+IN A

V–

OP193

OUT A

V+

NULL

NCNULL

–IN A

+IN A

V–

OP493

OUT A

–IN A

+IN A

V+

+IN B

–IN B

OUT B

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

OP493

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

OUT A

–IN A

+IN A

V+

+IN B

–IN B

OUT B

NC = NO CONNECT

FEATURES Operates from +1.7 V to ⴞ18 V Low Supply Current: 15 ␮A/Amplifier Low Offset Voltage: 75 ␮V Outputs Sink and Source: ⴞ8 mA No Phase Reversal Single- or Dual-Supply Operation High Open-Loop Gain: 600 V/mV Unity-Gain Stable

APPLICATIONS Digital Scales Strain Gages Portable Medical Equipment Battery-Powered Instrumentation Temperature Transducer Amplifier

GENERAL DESCRIPTION

The OP193 family of single-supply operational amplifiers features a combination of high precision, low supply current and the ability to operate at low voltages. For high performance in single-supply systems the input and output ranges include ground, and the outputs swing from the negative rail to within 600 mV of the positive supply. For low voltage operation the OP193 family can operate down to 1.7 volts or ±0.85 volts.

The combination of high accuracy and low power operation make the OP193 family useful for battery-powered equipment. Its low current drain and low voltage operation allow it to continue performing long after other amplifiers have ceased functioning either because of battery drain or headroom.

The OP193 family is specified for single +2 volt through dual ±15 volt operation over the HOT (–40°C to +125°C) temperature range. They are available in plastic DIPs, plus SOIC surfacemount packages.

Operational Amplifiers

OP193/OP293/OP493

PIN CONFIGURATIONS

8-Lead SO

(S Suffix)

8-Lead SO

(S Suffix)

OUT A

–IN A

OP293

+IN A

V–

14-Lead Epoxy DIP

(P Suffix)

V+

OUT B

–IN B

+IN B

8-Lead Epoxy DIP

(P Suffix)

8-Lead Epoxy DIP

(P Suffix)

OUT A

–IN A

+IN A

V–

OP293

16-Lead Wide Body SOL

(S Suffix)

V+

OUT B

–IN B

+IN B

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002

OP193/OP293/OP493–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

(@ VS = ⴞ15.0 V, TA = 25ⴗC unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OP193 75 150 µV OP193, –40°C ≤ T

≤ +125°C 175 250 µV

OP293 100 250 µV OP293, –40°C ≤ T

≤ +125°C 200 350 µV

OP493 125 275 µV OP493, –40°C ≤ T

Input Bias Current I

= 0 V,

–40°C ≤ T

Input Offset Current I

VCM = 0 V, –40°C ≤ T

Input Voltage Range V

Common-Mode Rejection CMRR –14.9 ≤ V

≤ +125°C1520nA

≤ +125°C24nA

≤ +125°C 225 375 µV

–14.9 +13.5 –14.9 +13.5 V

≤ +14 V 100 116 97 116 dB

–14.9 ≤ VCM ≤ +14 V,

Large Signal Voltage Gain A

–40°C ≤ T RL = 100 kΩ, –10 V ≤ V

≤ +125°C9794dB

≤ +10 V 500 500 V/mV

OUT

–40°C ≤ TA ≤ +85°C 300 300 V/mV

Large Signal Voltage Gain A

–40°C ≤ T RL = 10 kΩ, –10 V ≤ V

≤ +125°C 300 300 V/mV

≤ +10 V 350 350 V/mV

OUT

–40°C ≤ TA ≤ +85°C 200 200 V/mV

Large Signal Voltage Gain A

–40°C ≤ T RL = 2 kΩ, –10 V ≤ V

≤ +125°C 150 150 V/mV

≤ +10 V 200 200 V/mV

OUT

–40°C ≤ TA ≤ +85°C 125 125 V/mV –40°C ≤ TA ≤ +125°C 100 100 V/mV

Long Term Offset Voltage V

Note 1 150 300 µV

Offset Voltage Drift ∆VOS/∆T Note 2 0.2 1.75 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

IL = 1 mA 14.1 14.2 14.1 14.2 V I

= 1 mA,

–40°C ≤ TA ≤ +125°C 14.0 14.0 V I

= 5 mA 13.9 14.1 13.9 14.1 V

Output Voltage Swing Low V

IL = –1 mA –14.7 –14.6 –14.7 –14.6 V I

= –1 mA,

–40°C ≤ TA ≤ +125°C –14.4 –14.4 V I

= –5 mA +14.2 –14.1 +14.2 –14.1 V

Short Circuit Current I

±25 ±25 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

= ±1.5 V to ± 18 V 100 120 97 120 dB

= ±1.5 V to ± 18 V,

–40°C ≤ TA ≤ +125°C9794dB

Supply Current/Amplifier I

–40°C ≤ TA ≤ +125°C, RL = ∞ V

= 0 V, VS = ±18 V 30 30 µA

OUT

NOISE PERFORMANCE

Voltage Noise Density e Current Noise Density i

f = 1 kHz 65 65 nV/√Hz f = 1 kHz 0.05 0.05 pA/√Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 15 15 V/ms

Gain Bandwidth Product GBP 35 35 kHz Channel Separation V

= 10 V p-p,

OUT

RL = 2 kΩ, f = 1 kHz 120 120 dB

NOTES

Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.

Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

–2–

REV. B

OP193/OP293/OP493

ELECTRICAL SPECIFICATIONS

(@ VS = 5.0 V, VCM = 0.1 V, TA = 25ⴗC unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OP193 75 150 µV OP193, –40°C ≤ T

≤ +125°C 175 250 µV

OP293 100 250 µV OP293, –40°C ≤ T

≤ +125°C 200 350 µV

OP493 125 275 µV OP493, –40°C ≤ T

Input Bias Current I Input Offset Current I Input Voltage Range V

–40°C ≤ TA ≤ +125°C1520nA –40°C ≤ TA ≤ +125°C24nA

Common-Mode Rejection CMRR 0.1 ≤ V

≤ 4 V 100 116 96 116 dB

≤ +125°C 225 375 µV

0404V

0.1 ≤ VCM ≤ 4 V,

Large Signal Voltage Gain A

–40°C ≤ T RL = 100 kΩ,

0.03 ≤ V

≤ +125°C92 92 dB

≤ 4.0 V 200 200 V/mV

OUT

–40°C ≤ TA ≤ +85°C 125 125 V/mV

Large Signal Voltage Gain A

–40°C ≤ T RL = 10 kΩ,

0.03 ≤ V

≤ +125°C 130 130 V/mV

≤ 4.0 V 75 75 V/mV

OUT

–40°C ≤ TA ≤ +85°C 50 50 V/mV

Long Term Offset Voltage V

–40°C ≤ T Note 1 150 300 µV

≤ +125°C 70 70 V/mV

Offset Voltage Drift ∆VOS/∆T Note 2 0.2 1.25 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

IL = 100 µA 4.4 4.4 V I

= 1 mA 4.1 4.4 4.1 4.4 V

IL = 1 mA, –40°C ≤ T

≤ +125°C 4.0 4.0 V

IL = 5 mA 4.0 4.4 4.0 4.4 V

Output Voltage Swing Low V

IL = –100 µA 140 160 140 160 mV IL = –100 µA, –40°C ≤ T

≤ +125°C 220 220 mV

No Load 5 5 mV I

= –1 mA 280 400 280 400 mV

IL = –1 mA, –40°C ≤ T

≤ +125°C 500 500 mV

IL = –5 mA 700 900 700 900 mV

Short Circuit Current I

±8 ±8mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

= ±1.7 V to ± 6.0 V 100 120 97 120 dB

VS = ±1.5 V to ± 18 V,

Supply Current/Amplifier I

–40°C ≤ T

VCM = 2.5 V, RL = ∞ 14.5 14.5 µA

≤ +125°C94 90 dB

NOISE PERFORMANCE

Voltage Noise Density e Current Noise Density i

f = 1 kHz 65 65 nV/√Hz f = 1 kHz 0.05 0.05 pA/√Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 12 12 V/ms

Gain Bandwidth Product GBP 35 35 kHz

NOTES

Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.

Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

REV. B

–3–

OP193/OP293/OP493

ELECTRICAL SPECIFICATIONS

(@ VS = 3.0 V, VCM = 0.1 V, TA = 25ⴗC unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OP193 75 150 µV OP193, –40°C ≤ T

≤ +125°C 175 250 µV

OP293 100 250 µV OP293, –40°C ≤ T

≤ +125°C 200 350 µV

OP493 125 275 µV OP493, –40°C ≤ T

Input Bias Current I Input Offset Current I Input Voltage Range V

–40°C ≤ TA ≤ +125°C1520nA –40°C ≤ TA ≤ +125°C24nA

Common-Mode Rejection CMRR 0.1 ≤ V

≤ 2 V 97 116 94 116 dB

≤ +125°C 225 375 µV

0202V

0.1 ≤ VCM ≤ 2 V,

Large Signal Voltage Gain A

–40°C ≤ T RL = 100 kΩ, 0.03 ≤ V –40°C ≤ T

≤ +125°C9087dB

≤ +85°C 75 75 V/mV

≤ 2 V 100 100 V/mV

OUT

–40°C ≤ TA ≤ +125°C 100 100 V/mV

Long Term Offset Voltage V

Note 1 150 300 µV

Offset Voltage Drift ∆VOS/∆T Note 2 0.2 1.25 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

IL = 1 mA 2.1 2.14 2.1 2.14 V IL = 1 mA, –40°C ≤ T

≤ +125°C 1.9 1.9 V

IL = 5 mA 1.9 2.1 1.9 2.1 V

Output Voltage Swing Low V

IL = –1 mA 280 400 280 400 mV IL = –1 mA –40°C ≤ T

≤ +125°C 500 500 mV

IL = –5 mA 700 900 700 900 mV

Short Circuit Current I

±8 ±8mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

= +1.7 V to +6 V, 100 97

–40°C ≤ TA ≤ +125°C9490dB

Supply Current/Amplifier I

VCM = 1.5 V, RL = ∞ 14.5 22 14.5 22 µA –40°C ≤ TA ≤ +125°C2222µA

Supply Voltage Range V

+2 ±18 +2 ± 18 V

NOISE PERFORMANCE

Voltage Noise Density e Current Noise Density i

f = 1 kHz 65 65 nV/√Hz f = 1 kHz 0.05 0.05 pA/√Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 10 10 V/ms

Gain Bandwidth Product GBP 25 25 kHz Channel Separation V

= 10 V p-p,

OUT

RL = 2 kΩ, f = 1 kHz 120 120 dB

NOTES

Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.

Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

–4–

REV. B

OP193/OP293/OP493

ELECTRICAL SPECIFICATIONS

(@ VS = 2.0 V, VCM = 0.1 V, TA = 25ⴗC unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OP193 75 150 µV OP193, –40°C ≤ T

≤ +125°C 175 250 µV

OP293 100 250 µV OP293, –40°C ≤ T

≤ +125°C 175 350 µV

OP493 125 275 µV

Input Bias Current I Input Offset Current I Input Voltage Range V Large Signal Voltage Gain A

OP493, –40°C ≤ T –40°C ≤ TA ≤ +125°C1520nA –40°C ≤ TA ≤ +125°C24nA

RL = 100 kΩ, 0.03 ≤ V

≤ +125°C 225 375 µV

0101V

≤ 1 V 60 60 V/mV

OUT

–40°C ≤ TA ≤ +125°C 70 70 V/mV

Long Term Offset Voltage V

Note 1 150 300 µV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

Supply Voltage Range V

= 1.7 V to 6 V, 100 97

–40°C ≤ T

≤ +125°C9490dB

VCM = 1.0 V, RL = ∞ 13.2 20 13.2 20 µA –40°C ≤ T

≤ +125°C2525µA

+2 ±18 +2 ± 18 V

NOISE PERFORMANCE

Voltage Noise Density e Current Noise Density i

f = 1 kHz 65 65 nV/√Hz f = 1 kHz 0.05 0.05 pA/√Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 10 10 V/ms

Gain Bandwidth Product GBP 25 25 kHz

Specifications subject to change without notice.

REV. B

–5–

+ 11 hidden pages